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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW87 VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW87
QUICK REFERENCE DATA R.F. performance up to Th = 25 C in an unneutralized common-emitter class-B circuit MODE OF OPERATION c.w. VCE V 13,5 f MHz 175 PL W 25 Gp dB >6 % > 70 zi 1,6 + j1,4 YL mS 210 + j5,5
PIN CONFIGURATION
halfpage
PINNING - SOT123 PIN 1 DESCRIPTION collector emitter base emitter
1
4 c
handbook, halfpage
2 3 4
e
b
MBB012
2
3
MSB057
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. max.
BLW87
36 V 18 V 4V 6A 12 A 76 W 200 C
-65 to + 150 C
handbook, halfpage
10
MGP649
MGP650
handbook, halfpage
100
IC (A)
Prf (W)
Th = 70 C
Tmb = 25 C
continuous r.f. operation derate by 0.42 W/K
short-time operation during mismatch
50 continuous d.c. operation derate by 0.32 W/K
1
1
10
VCE (V)
102
0 0 50 100 Th (C) 150
Fig.2 D.C. SOAR.
Fig.3
R.F. power dissipation; VCE 16,5 V; f 1 MHz.
THERMAL RESISTANCE (dissipation = 20 W; Tmb = 76 C; i.e. Th = 70 C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 3,0 K/W 2,25 K/W 0,3 K/W
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
CHARACTERISTICS Tj = 25 C Collector-emitter breakdown voltage VBE = 0; IC = 25 mA Collector-emitter breakdown voltage open base; IC = 50 mA Emitter-base breakdown voltage open collector; IE = 10 mA Collector cut-off current VBE = 0; VCE = 18 V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 D.C. current gain(1) hFE VCEsat MHz(1) fT fT Cc Cre Ccf typ. typ. typ. typ. typ. typ. IC = 2,5 A; VCE = 5 V Collector-emitter saturation voltage(1) IC = 7,5 A; IB = 1,5 A Transition frequency at f = 100 -IE = 2,5 A; VCB = 13,5 V -IE = 7,5 A; VCB = 13,5 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 15 V Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 15 V Collector-flange capacitance Note 1. Measured under pulse conditions: tp 200 s; 0,02. ESBO ESBR > > typ. ICES < V(BR)EBO > V(BR) CEO > V(BR) CES >
BLW87
36 V 18 V 4V 10 mA 8 mJ 8 mJ 50 10 to 80 1,7 V 800 MHz 750 MHz 65 pF 41 pF 2 pF
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLW87
MGP651
handbook, halfpage
75
MGP652
typical values Tj = 25 C VCE = 13.5 V 5V
handbook, halfpage
200
IE = Ie = 0 f = 1 MHz
hFE
Cc (pF)
50
100 typ 25
0 0 5 10 IC (A) 15
0 0 10 VCB (V) 20
Fig.4
Fig.5 Tj = 25 C.
handbook, full pagewidth
1000
MGP653
VCB = 13.5 V typ f = 100 MHz Tj = 25 C
fT (MHz)
500
0 0 5 10 -IE (A) 15
Fig.6
August 1986
5
Philips Semiconductors
Product specification
VHF power transistor
APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 C f (MHz) 175 175 VCE (V) 13,5 12,5 PL (W) 25 25 PS (W) < 6,25 - GP (dB) > 6 typ. 6,6 IC (A) < 2,64 - (%) > 70 typ. 75 zi () 1,6 + j1,4 -
BLW87
YL (mS) 210 + j5,5 -
handbook, full pagewidth
C1 50
L1 C2
,, ,, ,,
C3a L5 L4 T.U.T. L2 C3b L6 C4 C5 L3 L8 +VCC
C6a C7 50 C8
L7
C6b
R2
R1
MGP604
Fig.7 Test circuit; c.w. class-B.
List of components: C1 C2 C4 C5 C7 L1 L2 L3 L4 L6 L7 R1 R2 = = = = = = = = = = = = = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) C3b = 47 pF ceramic capacitor (500 V) 120 pF ceramic capacitor (500 V) 100 nF polyester capacitor C6b = 8,2 pF ceramic capacitor (500 V) 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) 1 turn Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2 x 5 mm 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 x 5 mm L8 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L5 = strip (12 mm x 6 mm); taps for C3a and C3b at 5 mm from transistor 2 turns Cu wire (1,6 mm); int. dia. 5,0 mm; length 6,0 mm; leads 2 x 5 mm 2 turns Cu wire (1,6 mm); int. dia. 4,5 mm; length 6,0 mm; leads 2 x 5 mm 10 ( 10%) carbon resistor (0,25 W) 4,7 ( 5%) carbon resistor (0,25 W)
C3a =
C6a =
L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
Component layout and printed-circuit board for 175 MHz test circuit are shown in Fig.8. August 1986 6
Philips Semiconductors
Product specification
VHF power transistor
BLW87
handbook, full pagewidth
150
72
1888MJK
L3 C4 R1 L2 C1 C2 L1 L4 L7 C3b C3a L5 L6
L8 +VCC C5 R2
C6a C7 C8 C6b
1888MJK
rivet
MGP605
Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets.
August 1986
7
Philips Semiconductors
Product specification
VHF power transistor
BLW87
MGP654
handbook, halfpage
50
typical values f = 175 MHz Th = 25 C
VCE = 13.5 V VCE = 12.5 V
handbook, halfpage
15
MGP655
PL (W)
Gp (dB) 10
typical values f = 175 MHz Th = 25 C
VCE = 13.5 V VCE = 12.5 V
150 (%) 100
Gp
25
Th = 70 C 5 50
0 0 5 10 PS (W) 15
0 0 20 PL (W)
0 40
Fig.9
Fig.10
MGP656
handbook, halfpage
30
PLnom (W) (VSWR = 1) 20
VSWR = 20 50
The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio with VSWR as parameter. The graph applies to the situation in which the drive (PS/PSnom) increases linearly with supply over-voltage ratio.
10
PS PSnom 0 1 1.1 1.2 VCE VCEnom 1.3
Fig.11 R.F. SOAR (short-time operation during mismatch); f = 175 MHz; Th = 70 C; Rth mb-h = 0,3 K/W; VCEnom = 13,5 V or 12,5 V; PS = PSnom at VCEnom and VSWR =1; measured in the circuit of Fig.7.
August 1986
8
Philips Semiconductors
Product specification
VHF power transistor
OPERATING NOTE Below 50 MHz a base-emitter resistor of 10 is recommended to avoid oscillation. This resistor must be effective for r.f. only.
BLW87
MGP657
handbook, halfpage
5
input impedance (series components) versus frequency (class-B operation)
ri, xi () ri ri xi 0
xi
-5
0
100
200
f (MHz)
300
Typical values; VCE = 13,5 V; PL = 25 W; Th = 25 C.
Fig.12
MGP658
handbook, halfpage
10
load impedance (parallel components) versus frequency (class-B operation)
500
MGP659
handbook, halfpage
20
Gp (dB) CL (pF) 15
power gain versus frequency (class-B operation)
RL () RL 5 CL RL
0
10
5 CL 0 0 100 200 f (MHz) -500 300 0 0 100 200 f (MHz) 300
Typical values; VCE = 13,5 V; PL = 25 W; Th = 25 C.
Typical values; VCE = 13,5 V; PL = 25 W; Th = 25 C.
Fig.13
Fig.14
August 1986
9
Philips Semiconductors
Product specification
VHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLW87
SOT123A
D
A F q U1 C B
w2 M C H L b c
4
3
A
p
U2
U3
1 2
H
w1 M A B
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.47 6.37 0.294 0.251 b 5.82 5.56 c 0.18 0.10 D 9.73 9.47 D1 9.63 9.42 F 2.72 2.31 H 20.71 19.93 L 5.61 5.16 p 3.33 3.04 Q 4.63 4.11 q 18.42 U1 25.15 24.38 0.99 0.96 U2 6.61 6.09 0.26 0.24 U3 9.78 9.39 0.385 0.370 w1 0.51 0.02 w2 1.02 45 0.04
0.229 0.007 0.219 0.004
0.383 0.397 0.107 0.815 0.373 0.371 0.091 0.785
0.221 0.131 0.203 0.120
0.182 0.725 0.162
OUTLINE VERSION SOT123A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
August 1986
10
Philips Semiconductors
Product specification
VHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLW87
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1986
11

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