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| FDG311N February 2000 FDG311N N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Features * 1.9 A, 20 V. RDS(ON) = 0.115 @ VGS = 4.5 V RDS(ON) = 0.150 @ VGS = 2.5 V. * * * Low gate charge (3nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applications * * * Load switch Power management DC/DC converter D D S 1 6 2 5 SC70-6 D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25 C unless otherwise noted Parameter Ratings 20 (Note 1a) Units V V A W C 8 1.9 6 0.75 0.48 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1b) 260 C/W Package Marking and Ordering Information Device Marking .11 Device FDG311N Reel Size 7 Tape Width 8mm Quantity 3000 units 2000 Fairchild Semiconductor Corporation FDG311N Rev. D FDG311N Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS IGSS TA = 25 C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Forward Gate-Body Leakage Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V Min 20 Typ Max Units V Off Characteristics 14 1 100 -100 mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, VGS = 4.5 V, ID = 1.9 A ID = 1.9 A, TJ = 125C VGS = 2.5 V, ID = 1.6 A VGS = 4.5 V, VDS = 5 V 0.4 0.9 -3 1.5 V mV/C 0.082 0.115 0.110 0.170 0.105 4 6 0.150 ID(on) gFS On-State Drain Current Forward Transconductance A S VDS = 5 V, ID = 0.5 A Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 10 V, VGS = 0 V, f = 1.0 MHz 270 55 20 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10 V, ID = 1 A, VGS = 5 V, RGEN = 6 5 9 10 2 12 17 18 6 4.5 ns ns ns ns nC nC nC VDS = 10 V, ID = 1.9 A, VGS = 4.5 V 3 0.6 0.9 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note 2) 0.42 0.7 1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 170C/W when mounted on a 1 in2 pad of 2oz copper. b) 260C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDG311N Rev. D FDG311N Typical Characteristics 10 VGS = 4.5V 3.5V 3.0V 2.5V 6 2.0V 4 2 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 2.5V 1.2 1 0.8 3.0V 3.5V 4.0V 4.5V VGS = 2.0V ID, DRAIN CURRENT (A) 8 2 1.5V 0 0 0.5 1 1.5 2 2.5 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 2 4 6 8 10 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.32 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 1.9A VGS = 4.5V ID = 1A 0.28 0.24 0.2 0.16 0.12 0.08 0.04 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) TA = 25oC 1.4 1.2 1 TA = 125oC 0.8 0.6 -50 -25 0 25 50 75 100 o 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 10 125 C IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 8 TA = -55oC 25oC o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VGS = 0V 1 TA = 125oC 0.1 25oC -55oC 0.01 6 4 2 0.001 0 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG311N Rev. D FDG311N Typical Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) ID = 1.9A 4 (continued) 500 VDS = 5V 10V CAPACITANCE (pF) 400 CISS f = 1MHz VGS = 0 V 15V 3 300 2 200 1 100 COSS CRSS 0 0 0.5 1 1.5 2 2.5 3 3.5 4 Qg, GATE CHARGE (nC) 0 0 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. 10 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 1ms 10ms POWER (W) 1 10s DC 0.1 VGS = 4.5V SINGLE PULSE o RJA = 260 C/W TA = 25 C 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) o 30 SINGLE PULSE 24 RJA= 260 C/W TA= 25 C o o 100ms 1s 18 12 6 0 0.0001 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.5 D = 0.5 0.2 R JA (t) = r(t) * R JA R JA =260 C/W P(pk) 0.1 0.05 0.1 0.05 0.01 0.02 Single Pulse t1 t2 TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2 0.01 0.005 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 300 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. FDG311N Rev. D TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. www.fairchildsemi.com Rev. D |
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