 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HAT1126R, HAT1126RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0406-0100 Rev.1.00 Sep.10.2004 Features * * * * Low on-resistance Capable of 4.5 V gate drive High density mounting "J" is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 78 DD 56 DD 5 76 2 G 4 G 8 3 12 S1 S3 4 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID ID (pulse)Note1 Ratings HAT1126R -60 20 -6.0 -48 HAT1126RJ -60 20 -6.0 -48 Unit V V A A A mJ W W C C Avalanche current IAPNote4 -- -6.0 Note4 Avalanche energy EAR -- 3.08 Channel dissipation PchNote2 2 2 Channel dissipation PchNote3 3 3 Channel temperature Tch 150 150 Storage temperature Tstg -55 to +150 -55 to +150 Notes: 1. PW 10s, duty cycle 1% 2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s 3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s 4. Value at Tch = 25C, Rg 50 Rev.1.00 Sep. 10, 2004 page 1 of 7 HAT1126R, HAT1126RJ Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Symbol V(BR)DSS Min -60 20 -- -- -- -- -1.0 4.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- 7.0 40 60 2300 230 140 37 6.5 8 20 15 55 10 -0.85 30 Max -- -- -1 -- -10 10 -2.5 -- 50 85 -- -- -- -- -- -- -- -- -- -- -1.1 -- Unit V V A A A A V S m m pF pF pF nC nC nC ns ns ns ns V ns Unit ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VDS = -60 V, VGS = 0 VDS = -48 V, VGS = 0 Ta = 125C VGS = 16 V, VDS = 0 VDS = -10 V, ID = -1 mA ID = -3.0 ANote5, VDS = -10 V ID = -3.0 ANote5, VGS = -10 V ID = -3.0 ANote5, VGS = -4.5 V VDS = -10 V, VGS = 0 f = 1 MHz VDD = -25 V VGS = -10 V ID = -6.0 A VGS = -10 V, ID= -3.0 A VDD -30 V RL = 10 RG = 4.7 IF = -6.0 A, VGS = 0Note5 IF = -6.0 A, VGS = 0 diF/dt = 100 A / s Gate to Source breakdown voltage V(BR)GSS Zero gate voltage drain current IDSS HAT1126R IDSS Zero gate voltage drain current HAT1126RJ IDSS Gate to source leak current IGSS Gate to source cutoff voltage VGS(off) Forward transfer admittance |yfs| Static drain to source on state RDS(on) resistance RDS(on) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate to source charge Qgs Gate to drain charge Qgd Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 5. Pulse test td(on) tr td(off) tf VDF trr Rev.1.00 Sep. 10, 2004, page 2 of 7 HAT1126R, HAT1126RJ Main Characteristics Power vs. Temperature Derating 4.0 Pch (W) -100 (A) Test condition. When using the glass epoxy board. (FR4 40 x 40 x 1.6 mm), (PW 10s) Maximum Safe Operation Area 10 s 10 0 s 3.0 -10 1 D ID C O PW s m Channel Dissipation pe = Drain Current ra 10 2.0 1 Dr ive -1 tio m n s 1.0 Op 2 Dr er (P -0.1 Operation in this area is limited by R DS(on) Ta = 25C 1 shot Pulse -0.1 -1 W ive at < No 10 te6 s) ion at er Op ion 0 50 100 150 Ta (C) 200 -0.01 -0.01 -10 -100 Ambient Temperature Drain to Source Voltage VDS (V) Note 6: When using the glass epoxy board. ( FR4 40 x 40 x 1.6 mm) Typical Transfer Characteristics -10 VDS = -10 V Pulse Test -8 Typical Output Characteristics -10 (A) -10 V -4 V Pulse Test (A) -8 -3 V ID -6 Drain Current ID Drain Current -6 -4 -4 Tc = 75C 25C -25C -1 -2 -3 Gate to Source Voltage -4 -5 VGS (V) -2 VGS = -2.5 V 0 -1 -2 -3 Drain to Source Voltage -4 -5 VDS (V) -2 0 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (mV) Drain to Source On State Resistance Pulse Test -300 RDS(on) (m) -400 Static Drain to Source on State Resistance vs. Drain Current 1000 Pulse Test 500 200 100 VGS = -4.5 V 50 -10 V -200 ID = -5 A -3 A -100 -1 A 0 -5 -10 -15 VGS Gate to Source Voltage -20 (V) 20 10 -1 -3 -10 ID -30 (A) -100 Drain Current Rev.1.00 Sep. 10, 2004, page 3 of 7 HAT1126R, HAT1126RJ Static Drain to Source on State Resistance vs. Temperature 160 Pulse Test 120 -1 A 80 VGS = -4.5 V -3 A Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance RDS(on) (m) Forward Transfer Admittance |yfs| (S) 100 30 Tc = -25C 10 3 25C 1 0.3 0.1 0.03 0.01 -0.01 -0.03 -0.1 -0.3 VDS = -10 V Pulse Test -1 -3 -10 75C -5 A 40 -10 V 0 -50 -25 0 25 ID = -1, -3, -5 A 50 75 100 125 150 Case Temperature Tc (C) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 100 Reverse Recovery Time trr (ns) Body-Drain Diode Reverse Recovery Time 10000 3000 Capacitance C (pF) 50 Ciss 20 10 5 di / dt = 50 A / s VGS = 0, Ta = 25C -0.3 -1 -3 IDR (A) -10 1000 300 Coss 100 Crss 30 V = 0 GS f = 1 MHz 10 0 -10 2 1 -0.1 -20 -30 -40 (V) -50 Reverse Drain Current Drain to Source Voltage VDS Switching Characteristics 0 VGS (V) Dynamic Input Characteristics 0 VDD = -50 V -25 V -10 V (V) 1000 300 100 30 10 3 1 -0.1 tf td(on) td(off) tr Drain to Source Voltage VDS -40 VDS -8 -60 -12 VGS -16 -20 160 -80 ID = -6 A 16 -100 0 VDD = -50V -25V -10V 32 48 64 Qg (nc) Gate to Source Voltage Switching Time t (ns) -20 -4 VGS = -10 V, VDD = -30 V PW = 5 s, RG = 4.7 , duty 1 % -0.3 -1 Drain Current ID -3 (A) -10 Gate Charge Rev.1.00 Sep. 10, 2004, page 4 of 7 HAT1126R, HAT1126RJ Reverse Drain Current vs. Source to Drain Voltage -10 V -8 Pulse Test -10 Reverse Drain Current IDR (A) -6 -5 V -4 VGS = 0, 5 V -2 0 -0.4 -0.8 -1.2 Source to Drain Voltage -1.6 VSD (V) -2.0 10 Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 1 D=1 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 ch - f(t) = s (t) * ch - f ch - f = 125C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6mm) u tp lse PDM PW T 0.001 1s ho D= PW T 0.0001 10 100 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 10 Normalized Transient Thermal Impedance s (t) 1 D=1 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 ch - f(t) = s (t) * ch - f ch - f = 166C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) ls pu e PDM PW T 0.001 1s ho t D= PW T 0.0001 10 100 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Rev.1.00 Sep. 10, 2004, page 5 of 7 HAT1126R, HAT1126RJ Avalanche Test Circuit Avalanche Waveform V DS Monitor L I AP Monitor EAR = 1 2 L * I AP * 2 VDSS VDSS - V DD V (BR)DSS VDD I AP V DS ID Rg Vin -15 V D. U. T 50 VDD 0 Switching Time Test Circuit Switching Time Waveform Vin Vin Monitor Rg D.U.T. RL 90% Vin -10 V V DD = -10 V Vout td(on) 10% tr td(off) 10% tf Vout Monitor 10% 90% 90% Rev.1.00 Sep. 10, 2004, page 6 of 7 HAT1126R, HAT1126RJ Package Dimensions As of January, 2003 Unit: mm 4.90 5.3 Max 5 8 1 4 3.95 *0.22 0.03 0.20 0.03 1.75 Max 0.75 Max 6.10 - 0.30 + 0.10 1.08 0 - 8 + 0.67 0.14 - 0.04 + 0.11 1.27 0.60 - 0.20 *0.42 0.08 0.40 0.06 0.15 0.25 M *Dimension including the plating thickness Base material dimension Package Code JEDEC JEITA Mass (reference value) FP-8DA Conforms -- 0.085 g Ordering Information Part Name HAT1126R-EL-E HAT1126RJ-EL-E Quantity 2500 pcs 2500 pcs Taping Taping Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00 Sep. 10, 2004, page 7 of 7 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 http://www.renesas.com (c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .2.0 |
Price & Availability of HAT1126R
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |