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| MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF842/D NPN Silicon RF Power Transistor . . . designed for 12.5 volt UHF large-signal, common-base amplifier applications in industrial and commercial FM equipment operating in the range of 806 - 960 MHz. * Specified 12.5 Volt, 870 MHz Characteristics Output Power = 20 Watts Power Gain = 6.0 dB Min Efficiency = 50% Min * Series Equivalent Large-Signal Characterization * Internally Matched Input for Broadband Operation * 100% Tested for Load Mismatch Stress at All Phase Angles with 20:1 VSWR @ 15.5 Volt Supply and 50% RF Overdrive * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Silicon Nitride Passivated MRF842 20 W, 870 MHz RF POWER TRANSISTOR NPN SILICON CASE 319-07, STYLE 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TC = 25C (1) Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Characteristic Thermal Resistance, Junction to Case (2) Symbol RJC Symbol Min Typ Value 16 36 4.0 7.6 80 0.64 - 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C C THERMAL CHARACTERISTICS Max 1.5 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)EBO ICBO 16 36 4.0 -- -- -- -- -- -- -- -- 5.0 Vdc Vdc Vdc mAdc NOTES: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 6 (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 MRF842 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 2.0 Adc, VCE = 5.0 Vdc) hFE 10 -- -- -- DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz) Cob -- 45 65 pF FUNCTIONAL TESTS Common-Base Amplifier Power Gain (Pout = 20 W, VCC = 12.5 Vdc, f = 870 MHz) Collector Efficiency (Pout = 20 W, VCC = 12.5 Vdc, f = 870 MHz) Load Mismatch Stress (VCC = 15.5 Vdc, Pin (3) = 6.0 W, f = 870 MHz, VSWR = 20:1, all phase angles) GPB -- No Degradation in Output Power 6.0 50 7.0 55 -- -- dB % NOTE: 3. Pin = 150% of the typical input power requirement for 20 W output power @ 12.5 Vdc. L1 C4 B VRE PORT C2 C3 SOCKET C10 SOCKET B L4 +12.5 Vdc C12 + C13 + C5 D.U.T. C7 C1 TL1 TL2 C6 C8 B -- Ferrite Bead, Ferroxcube 56-590-65-3B C1, C11 -- 51 pF, 100 Mil Chip Capacitor C2, C13 -- 15 F, 20 WV Tantalum C3, C12 -- 1000 pF Unelco J101 C4, C10 -- 91 pF Mini-Underwood C5 -- 15 pF Mini-Underwood C6 -- 12 pF Mini-Underwood C7, C8 -- 21 pF Mini-Underwood C9 -- 11 pF Mini-Underwood L1, L4 -- 11 Turns #20 AWG Over 10 ohm 1/2 W Carbon L2, L3 -- 4 Turns #20 AWG, 200 Mil ID TL1, TL4 -- Micro Strip, Zo = 50 TL2 -- Micro Strip, Zo = 38 , /4 @ 838 MHz TL3 -- Micro Strip, Zo = 24 , /4 @ 838 MHz Board -- 0.032 Glass Teflon Board -- 2 oz. Cu CLAD, r = 2.55 Figure 1. 870 MHz Test Circuit Schematic MRF842 2 CCCCC CCCCCCCC CCCCCCCC CCCCCCCC CCCCC C11 TL3 TL4 C9 CCCCC CCCCC CCC CCCCC CCC CCCCC CCC CCCCC L2 L3 MOTOROLA RF DEVICE DATA 26 24 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 22 20 18 16 14 12 10 8 6 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 VCC = 12.5 Vdc f = 870 MHz 28 26 24 22 20 18 16 14 12 10 8 800 820 840 860 2W VCC = 12.5 V 880 900 4W Pin = 6 W Pin, INPUT POWER (WATTS) f, FREQUENCY (MHz) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency 40 35 Pout , OUTPUT POWER (WATTS) 30 25 20 15 10 5 f = 870 MHz 0 6 7 8 9 10 11 12 13 14 15 16 2W Pin = 6 W 4W VCC, SUPPLY VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage MOTOROLA RF DEVICE DATA MRF842 3 0 0.5 1.0 0.5 1.5 2.0 1.0 2.5 1.5 Pout = 20 W, VCC = 12.5 Vdc f MHz 800 836 870 900 3.5 Zin Ohms 1.1 + j4.1 1.2 + j4.3 1.4 + j4.4 1.6 + j4.5 ZOL* Ohms 1.9 + j1.5 1.85 + j1.6 1.8 + j1.7 1.8 + j1.8 2.0 f = 800 MHz ZOL* 870 900 836 3.0 2.5 3.0 3.5 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. 4.0 f = 800 MHz Zin 836 870 4.0 4.5 5.0 4.5 900 5.0 Figure 5. Series Equivalent Input/Output Impedance MRF842 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS IDENTIFICATION NOTCH 6 -AL 5 4 Q 2 PL 0.15 (0.006) M TA M N M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. -N1 2 3 K F D 2 PL 0.38 (0.015) M B J H C E -TSEATING PLANE TA M M N M M 0.38 (0.015) TA N M STYLE 1: PIN 1. 2. 3. 4. 5. 6. DIM A B C D E F H J K L N Q INCHES MIN MAX 0.965 0.985 0.355 0.375 0.230 0.260 0.115 0.125 0.102 0.114 0.075 0.085 0.160 0.170 0.004 0.006 0.090 0.110 0.725 BSC 0.225 0.241 0.125 0.135 MILLIMETER MIN MAX 24.52 25.01 9.02 9.52 5.85 6.60 2.93 3.17 2.59 2.90 1.91 2.15 4.07 4.31 0.11 0.15 2.29 2.79 18.42 BSC 5.72 6.12 3.18 3.42 BASE (COMMON) EMITTER (INPUT) BASE (COMMON) BASE (COMMON) COLLECTOR (OUTPUT) BASE (COMMON) CASE 319-07 ISSUE M MOTOROLA RF DEVICE DATA MRF842 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF842 6 *MRF842/D* MRF842/D MOTOROLA RF DEVICE DATA |
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