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TLN212(F)
TOSHIBA Infrared LED GaAAs Infrared Emitter
TLN212(F)
Lead Free Product Infrared Light-Emission Diode For Still Camera Light Source For Auto Focus
* * * * * Optical radiation of current confining LED chip is condensed by a resin lens. High output Effective emission diameter of 388 x 296m Optical output efficiently radiated in solid angle of 1.136sr Can be operated at VCC = 3V (which is equal to is two cells) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristic Forward current Pulse forward current Reverse voltage Operating temperature Storage temperature (Note 1) (Note 2) Symbol IF IFP VR Topr Tstg Rating 50 800 1 -25~60 -40~90 Unit mA mA V C C
TOSHIBA Weight: 0.18g(typ.)
(Note 1): Permissible value for acceptance inspection / characteristic test and is guaranteed for actual application (Note 2): Within 4 hours at 1 cycle with frequency 10kHz, duty 50%, power applied for 0.1s paused for 0.4s
IFP = 0.8A
1
2
16
1
0.22ms
1.56ms 28.48ms 428.48ms 400ms
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2004-01-06
TLN212(F)
Optical And Electrical Characteristics (Ta = 25C)
Characteristic Forward voltage Pulse forward voltage Reverse current Effective emission spot diameter Radiation flux Half value angle Peak emission wavelength Spectral line half width (Note) Symbol VF VFP IR X Y e
1 2
Test Condition IF = 50mA IFP = 300mA, t = 10ms VR = 1V Half value of peak Half value of peak IFP = 300mA, t = 10ms IF = 50mA IF = 50mA IF = 50mA (Note 1) (Note 1) (Note 2)
Min 8 850
Typ. 1.35 1.67 388 296 12 35 870 40
Max 1.85 100 900
Unit V V A m mW nm nm
P
(Note1): The direction of X, Y are in the following diagram. The shaded area represents the emitting surface.
Y
LED chip X
(Note 2): Luminous radiation output effective angle = 25 degree
Precaution
Please be careful of the followings. 1. Soldering temperature: 260C max Soldering time: 5s max (Soldering must be performed 2mm from the bottom of the package.) 2. When forming the leads, bend each lead under the 2mm from the body of the device. Soldering must be performed after the leads have been formed. 3. The TLN212(F) for a still camera AF use only. Please do not use this device except for a still camera.
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TLN212(F)
IF - Ta
60 40
e - IFP
(typ.)
(mA)
(mW)
IF
30 Ta = -20C
Allowable forward current
40
e Radiant flux
20
25 60
20
10
0 0
20
40
60
80
0 0
200
400
600
800
Ambient temperature
Ta
(C)
Pulse forward current IFP
(mA)
Wavelength Characteriistic
1.0
(typ.)
800
IFP - VFP
(typ.)
IF = 50mA
0.8
(mA) IFP
Ta = 25C
600
Relative intensity
Pulse forward current
0.6
Ta = 60 400 25 -20 200
0.4
0.2
0 820
840
860
880
900
920
940
0 0
1
2
3
Wave length
(nm)
Pulse forward voltage
VFP
(V)
Radiation Pattern
(typ.)
Ta = 25C
10 0 10
20 30 40 50 60 70 80 90
20 30 40 50 60 70 80 90 1.0
0
0.2
0.4
0.6
0.8
Relative intensity
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TLN212(F)
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAC
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. * GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically.
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2004-01-06

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