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Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2722DF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of high resolution monitors. Suitable for operation up to 64 kHz, designed to withstand VCES pulses up to 1700 V.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 4.5 1.9 MAX. 1700 825 10 25 45 1 2.25 UNIT V V A A W V A s
Ths 25 C IC = 4.5 A; IB = 1.0 A ICM = 4.5 A; IB(end) = 0.7 A
PINNING - SOT199
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
Rbe
case isolated
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1700 825 10 25 10 20 150 20 45 150 150 UNIT V V A A A A mA A W C C
average over any 20 ms period Ths 25 C
ESD LIMITING VALUES
SYMBOL VC PARAMETER CONDITIONS MIN. MAX. 10 UNIT kV Electrostatic discharge capacitor voltage Human body model (250 pF, 1.5 k)
1 Turn-off current.
November 1995
1
Rev 1.000
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2722DF
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to heatsink Junction to ambient CONDITIONS without heatsink compound with heatsink compound in free air TYP. 35 MAX. 3.7 2.8 UNIT K/W K/W K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO REB VCEsat VBEsat VF hFE hFE PARAMETER Collector cut-off current
2
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 7.5 V; IC = 0 A IB = 1 mA VEB = 7.5 V IC = 4.5 A; IB = 1.0 A IC = 4.5 A; IB = 1.0 A IF = 4.5 A IC = 1.0 A; VCE = 5 V IC = 4.5 A; VCE = 1 V
MIN. 85 7.5 0.79 14 4.5
TYP. 13.5 65 0.87 1.6 19 7
MAX. 1.0 2.0 150 1.0 0.96 26 10
UNIT mA mA mA V V V V
Emitter cut-off current Emitter-base breakdown voltage Base-emitter resistance Collector-emitter saturation voltage Base-emitter saturation voltage Diode forward voltage DC current gain
DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (64 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS ICM = 4.5 A; LC = 260 H; Cfb = 4.8 nF; VCC = 160 V; IB(end) = 0.7 A; LB = 0.6 H; -VBB = 2 V; TYP. MAX. UNIT
1.9 0.4
2.25 0.48
s s
2 Measured with half sine-wave voltage (curve tracer).
November 1995
2
Rev 1.000
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2722DF
TRANSISTOR IC DIODE
ICsat
+ 150 v nominal adjust for ICsat
t
Lc
IB IBend t 5us 6.5us
D.U.T. IBend LB Cfb
Rbe
16us VCE
-VBB
t
Fig.1. Switching times waveforms (64 kHz).
Fig.3. Switching times test circuit.
ICsat 90 % IC
100
hFE
VCE = 5 V
BU2720/22DF
Ths = 25 C Ths = 85 C
10 % tf ts IB IBend
t
10
t
1 0.01
- IBM
0.1
1
10
IC / A
100
Fig.2. Switching times definitions.
Fig.4. DC current gain. hFE = f (IC) Parameter Ths (Low and high gain)
November 1995
3
Rev 1.000
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2722DF
hFE 100
VCE = 1 V
BU2720/22DF
Ths = 25 C Ths = 85 C
ts, tf / us 10
BU2722AF
10
1
1 0.01
0.1
0.1 1 10 IC / A 100
0
1
2
3
IB / A
4
Fig.5. DC current gain. hFE = f (IC) Parameter Ths (Low and high gain)
Fig.8. Limit storage and fall time. ts = f (IB); tf = f (IB); Ths = 85C; f = 64 kHz
VCEsat / V 10
Ths = 85 C Ths = 25 C
BU2722DF
120 110 100 90 80 70
PD%
Normalised Power Derating
with heatsink compound
1
IC/IB = 8 IC/IB = 4
60 50 40 30 20 10 0
0.1
0.01 0.1
1
10
IC / A
100
0
20
40
60
80 Ths / C
100
120
140
Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB
Fig.9. Normalised power dissipation. PD% = 100PD/PD 25C = f (Ths)
VBEsat / V 1
Ths = 85 C Ths = 25 C
BU2722DF
10
Zth / (K/W)
IC = 5.5 A
0.9
1
0.5 0.2 0.1 0.05 0.02
0.8 4.5 A
0.1
0.7
0.01 D=0 0.001 1E-06
P D
tp
D=
tp T t
T
0.6
0
0.5
1
1.5
IB / A
2
1E-04
1E-02 t/s
1E+00
Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC
Fig.10. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T
November 1995
4
Rev 1.000
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2722DF
VCC
LC
IBend
VCL LB T.U.T.
CFB
-VBB
IC / A 26 24 22 20 18 16 14 12 10 8 6 4 2 0 100 VCE / V
BU2720AF/DF
Area where fails occur
1000
1700
Fig.11. Test Circuit RBSOA. VCC = 150 V; -VBB = 1 - 4 V; LC = 1 mH; VCL = 1500 V; LB = 0.5 - 2 H; CFB = 1 - 6 nF; IB(end) = 0.7 - 4 A
Fig.12. Reverse bias safe operating area. Tj Tjmax
November 1995
5
Rev 1.000
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2722DF
MECHANICAL DATA
Dimensions in mm Net Mass: 5.5 g
15.3 max 0.7 7.3 3.1 3.3 6.2 5.8 21.5 max 3.2
5.2 max
o 45
seating plane
3.5
3.5 max not tinned
15.7 min 1 2.1 max 2 3 1.2 1.0
5.45
0.7 max 0.4 M 2.0
5.45
Fig.13. SOT199; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
November 1995
6
Rev 1.000
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2722DF
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
November 1995
7
Rev 1.000

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