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| Power Transistor Array STA315A Absolute Maximum Ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings 355 365 6 2 (pulse 3*) 30 3 (Ta=25C) 13.5 (Tc=25C) 150 -55 to +150 Unit V V V A mA W W C C Electrical Characteristics Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC RB RBE Es/b Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.7A IC = 0.5A, IB = 5mA IC = 1A, IB = 5mA IFEC = 2A Ratings 10max 2.7max 31 to 41 400min 0.2max 0.5max 2.5max 800120 2.00.4 50min 11.30.2 2.30.2 9.00.2 (Ta=25C) Unit A mA V External Dimensions STA3 (LF400A) 20.20.2 b a 0.50.15 * PW 1ms, Duty 25% L = 10mH, single pulse C1.50.5 Typical Switching Characteristics VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 5 IB2 (mA) 0 ton (s) 1.0 tstg (s) 8.5 tf (s) 2.5 1 E 2 B 3 C 4 B 5 C 6 B 7 C 8 E a) Type No. b) Lot No. (Unit: mm) s IC -- VCE Characteristics (typ.) 30m A s VCE (sat) -- IB Temperature Characteristics 0.5 8mA 5mA (IC = 0.5A) s VCE (sat) -- IC Temperature Characteristics 3 IC/IB = 100 3 12 A m VCE (sat) (V) IC (A) 3mA 2mA VCE (sat) (V) 2 2 Ta = 125C 75C 25C -40C 0.25 1 IB = 1mA Ta = 125C 75C 25C -40C 1 0 0 0 1 2 3 4 5 6 1 10 100 400 0 0 0.5 1 1.20.2 4.00.2 V V V k mJ 4.70.5 0.50.15 1.00.25 7*2.54=17.780.25 (2.54) 5 VCE (V) IB (mA) IC (A) s hFE -- IC Temperature Characteristics 3000 (VCE = 4V) s ton*tstg*tf -- IC Characteristics (typ.) 50 s j-a -- t Characteristics Single pulse 20 ton*tstg*tf (S) hFE 500 Ta = 125C 75C 25C -40C 5 tf 1 0.5 0.1 (C/W) j-a 1000 10 tstg VCC = 12V IB = 5mA -IB = 0A 10 5 ton 100 50 0.01 0.1 1 0 0.5 1.0 1.5 2.0 1 10 100 1000 0.5 1 4 IC (A) Ic (A) t (ms) s Safe Operating Area (single pulse) 5 (per element) s PT -- Ta Derating 20 Equivalent Circuit Diagram 1m 10 m s s 3 5 7 PT (W) IC (A) 1 0.5 10 W ith inf ini te he at sin k 2 1 RB RBE 4 6 8 Without heatsink natural air cooling Withou t heat sink 0.1 1 5 10 50 0 0 50 100 150 VCE (V) Ta (C) 62 |
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