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INTEGRATED CIRCUITS
SA621 1GHz - Low voltage LNA, mixer and VCO
Product specification IC17 Data handbook 1997 Nov 07
Philips Semiconductors
Philips Semiconductors
Product specification
1GHz low voltage LNA, mixer and VCO
SA621
DESCRIPTION
The SA621 is a combined low-noise amplifier, mixer and VCO designed for high-performance low-power communication systems from 800-1000MHz. The low-noise preamplifier has a 1.7dB noise figure at 881MHz with 15dB gain and an IP3 intercept of -7dBm at the input. The gain is stabilized by on-chip compensation to vary less than 0.2dB over -40 to +85C temperature range. The wide-dynamic-range mixer has a 12dB noise figure and IP3 of +4.5dBm at the input at 881MHz. The integrated VCO circuit with external resonator produces a high quality LO signal that drives the mixer and is buffered to an external PLL synthesizer IC. The nominal current drawn from a single 3V supply is 13.3mA. Additionally, the entire circuit can be powered down to further reduce the supply current to less than 20A.
PIN CONFIGURATION
PD1 1 PD2 2 GND 3 LO OUT 4 GND 5 GND 6 TANK 7 GND 8 GND 9 BYPASS 10
20 MIXER OUT 19 MIXER OUT 18 GND 17 MIXER IN 16 GND 15 LNA IN 14 GND 13 LNA OUT 12 VCC 11 GND
FEATURES
* Low current consumption * Outstanding gain and noise figure * Excellent gain stability versus temperature and supply voltage * LNA, mixer and VCO power down capability * Monotonic VCO frequency vs control voltage
SR01429
Figure 1. Pin Configuration
APPLICATIONS
* 900MHz cellular and cordless front-end * Spread spectrum receivers * RF data links * UHF frequency conversion * Portable radio
TEMPERATURE RANGE -40 to +85C ORDER CODE SA621DH DWG # SOT360-1
ORDERING INFORMATION
DESCRIPTION 20-Pin Thin Shrink Small Outline Package (Surface-mount, TSSOP)
BLOCK DIAGRAM
MIXER OUT MIXER OUT GND MIXER IN GND LNA IN GND LNA OUT VCC GND
20
10pF
19
10pF
18
17
16
15
14
13
12
11
LNA
1
PD1
2
PD2
3
GND
4
LO OUT
5
GND
6
GND
7
TANK
8
GND
9
GND
10
BYPASS
SR01428
Figure 2. SA621 Block Diagram
1997 Nov 07
2
853-1849 018660
Philips Semiconductors
Product specification
1GHz low voltage LNA, mixer and VCO
SA621
ABSOLUTE MAXIMUM RATINGS
SYMBOL VCC VIN PD TJMAX PMAX TSTG Supply voltage1 PARAMETER RATING -0.3 to +6 -0.3 to (VCC + 0.3) 980 150 +20 -65 to +150 UNITS V V mW C dBm C
Voltage applied to any other pin Power dissipation, TA = 25C (still air)2 20-Pin Plastic SSOP Maximum operating junction temperature Maximum power input/output Storage temperature range
NOTE: 1. Transients exceeding 8V on VCC pin may damage product. 2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, JA: 20-Pin SSOP = 110C/W 3. Pins 19 and 20 are ESD sensitive (mixer outputs).
RECOMMENDED OPERATING CONDITIONS
SYMBOL VCC TA TJ Supply voltage Operating ambient temperature range Operating junction temperature PARAMETER RATING 2.7 to 5.5 -40 to +85 -40 to +105 UNITS V C C
DC ELECTRICAL CHARACTERISTICS
VCC = +3.0V, TA = 25C; unless otherwise stated. LIMITS SYMBOL PARAMETER TEST CONDITIONS Full power-on LNA powered-down ICC Su ly Supply current Standby (VCO + bias) Full power-down VT VIH VIL IIL IIH PD logic threshold voltage Logic 1 level Logic 0 level PD1 input current PD2 input current Enable = 0.4V Enable = 2.4V 1.2 2.0 -0.3 10 10 MIN TYP 13.3 10 5.7 20 1.6 1.8 VCC 0.8 MAX UNITS mA mA mA A V V V A A
1997 Nov 07
3
Philips Semiconductors
Product specification
1GHz low voltage LNA, mixer and VCO
SA621
AC ELECTRICAL CHARACTERISTICS
VCC = +3.0V, TA = 25C; RFIN = 881MHz, fVCO = 964MHz; unless otherwise stated. LIMITS SYMBOL Low Noise Amplifier fRF S21 S21 S21/T S21/f S12 S11 S22 P-1dB IP3 NF tON tOFF Mixer PGC S11M NFM P-1dB IP3M IP2INT PRFM-IF PLO-IF PLO-RFM PLO-RF Mixer power conversion gain: RP = RL = 1.2k, Mixer input match Mixer SSB noise figure Mixer input 1dB gain compression Mixer input third order intercept Mixer input second order intercept Mixer RF feedthrough LO feedthrough to IF LO to mixer input feedthrough LO to LNA input feedthrough (VCO)1 883 See Figure 3 Offset = 30kHz Offset = 60kHz -10 -8 -109 -115 -22 45 VSWR=2:1, all phases 500 100 dBc/Hz dBc dB kHz kHz/V 1083 MHz dBm RFIN = -25dBm LO = -10dBm fRF = 881MHz, fLO = 964MHz, fIF = 83MHz Ext. impedance matching req. 8.7 -10 12 -10 4.5 15 -41 -23 -52 -38 dB dB dB dBm dBm dBm dBm dBm dBm dBm RF input frequency range Amplifier gain Amplifier gain in power-down mode Gain temperature sensitivity enabled Gain frequency variation Amplifier reverse isolation Amplifier input match Amplifier output match Amplifier input 1dB gain compression Amplifier input third order intercept Amplifier noise figure Amplifier turn-on time (Enable Lo Hi) Amplifier turn-off time (Enable Hi Lo) 800MHz - 1.0GHz @ 881 MHz With ext. impedance matching 800 15 -28 0.006 0.013 -28 -10 -10 -20 -7 1.7 120 0.3 1000 MHz dB dB dB/C dB/MHz dB dB dB dBm dBm dB s s PARAMETER TEST CONDITIONS -3o TYP +3o UNITS
Voltage Controlled Oscillator fVCO PVCO
VCO frequency range VCO power out VCO phase noise2 hase Harmonic content Residual modulation Pulling figure Pushing figure
Overall System GSYS System gain LNA + Mixer 23.0 23.7 24.4 dB
NOTES: 1. VCO performance dependent on external components. 2. Based on copper-plated 2mm ceramic resonator (1/4 wave), f = 1025MHz, and can be improved by silver-plated or larger resonators.
1997 Nov 07
4
Philips Semiconductors
Product specification
1GHz low voltage LNA, mixer and VCO
SA621
Table 1. Power ON/OFF Control Logic
PD1 0 0 1 or open 1 or open PD2 0 1 or open 0 1 or open Full chip power-down VCO on, Mixer on, LNA power-down VCO on, LNA and Mixer power-down Full chip power-on (default)
C1 100pF L6 12nH C3 6.8pF IFOUT L1 560nH C2 10nF C10 2.2pF
L3 6.8nH
C11 10nF C14 6.8pF 17 MIXER IN 16 GND 15 LNA IN
C8 10nF C13 33pF
+ -
VCC 3V C9 0.1F
L4 560nH 20 MIXER OUT 19 MIXER OUT
18 GND
14 GND
13 LNA OUT
12 VCC
11 GND
SA621
C4 2.2pF
PD1 1
PD2 2
GND 3
LOOUT 4
GND 5
GND 6
TANK 7
GND 8
GND 9
BYPASS 10 MURATA 2mm 1/4 WAVE FREQ=1025MHz D1 VCO CONTROL
R2 C6 10nF 24 C12 100pF VCOOUT C10 220pF C5 .5pF L7 18.5nH Hi-Q R1 5.1k D7 10nF
SR01424
Figure 3. SA621 Applications Circuit
1997 Nov 07
5
Philips Semiconductors
Product specification
1GHz low voltage LNA, mixer and VCO
SA621
PERFORMANCE CHARACTERISTICS
-4.00 -15 -16 -17 V POWER OUT (dBm) CC -6.00 -40C -7.00 LNA 1dB (dBm) -18 -19 -20 25C -21 -22 -10.00 -23 -11.00 -12.00 2.5 0 85C -24 -25 2.5 -40C 85C
-5.00
-8.00 25C -9.00
3
3.5
4 VCC (V)
4.5
5
5.5
3
3.5
VCO Power Out vs VCC
-9.0 -27.0 -27.5 -9.5 -40C -28.0 MIXER 1dB (dBm) -10.0 25C LNA GAIN (dB) -28.5 25C -40C
LNA 1dB Compression vs VCC
4 VCC (V)
4.5
5
5.5
-10.5
-29.0
-11.0
-29.5 85C -30.0
85C
-11.5 -30.5 -12.0 2.5
3
3.5
4 VCC (V)
4.5
5
5.5
-31.0 2.5 0
3
3.5
Mixer 1dB Compression vs VCC
7.0 6.5 6.0 -40C -5 MIXER IP3 (dBm) 5.5 25C 5.0 4.5 4.0 85C 3.5 -11 -40C 3.0 2.5 3 3.5 4 VCC (V) 4.5 5 5.5 -12 2.5 3 -10 LNA IP3 (dBm) -6 85C -7 -8 -9 25C -2 -3 -4
4 VCC (V)
4.5
5
5.5
LNA Gain (Disabled) vs VCC
3.5
Mixer IP3 vs VCC Figure 4. 1997 Nov 07 6
LNA IP3 vs VCC
4 VCC (V)
4.5
5
5.5
SR01425
Philips Semiconductors
Product specification
1GHz low voltage LNA, mixer and VCO
SA621
PERFORMANCE CHARACTERISTICS
13.8 14 13.6 13.4 13.2 I CC (mA) 25C 13.0 I CC(mA) 85C 12.8 12.6 12.4 12.2 2 12.0 11.8 2.5 0 3 3.5 4 VCC (V) 4.5 5 5.5 2.5 3 3.5 4 VCC (V) 4.5 5 5.5 -40C 8 ICC VCO On, LNA & Mixer Off 6 12 ICC LNA Off, Mixer & VCO On 10 ICC Full Chip Power-On
4
ICC vs VCC and Temperature
12 11 -37 -40C 10 LO to LNA IN (dBm) MIXER GAIN (dB) 9 25C 8 7 85C 6 5 4 2.5 -38 -39 -40 -41 -42 -43 -44 -45 2.5 85C -40C 25C -35 -36
ICC vs VCC at Room Temperature
3
3.5
4 VCC (V)
4.5
5
5.5
3
3.5
4 VCC (V)
4.5
5
5.5
Mixer Power Gain vs VCC
-20 -44 -21 -46 -22 -48 -23 LO to MIXER IN (dBm) LO to IF (dBm) -50 25C -52 -54 -40C -56 -27 -58 -28 -60 -29 -62 85C -64 2.5 3 3.5 4 VCC (V) 4.5 5 5.5 -30 2.5 -24 -25 -26 85C 25C -40C
LO to LNA In Feedthrough vs VCC
3
3.5
4 VCC (V)
4.5
5
5.5
LO to Mixer In Feedthrough vs VCC Figure 5.
LO to IF Feedthrough vs VCC
SR01426
1997 Nov 07
7
Philips Semiconductors
Product specification
1GHz low voltage LNA, mixer and VCO
SA621
PERFORMANCE CHARACTERISTICS
-35 -36 -37 MIXER IN to IF (dBm) -40C -38 -39 -40 -41 85C -42 -43 -44 -45 2.5 14.2 14.0 13.8 13.6 2.5 25C LNA GAIN (dB) 15.0 25C 14.8 14.6 14.4 85C 15.6 15.4 15.2 -40C
3
3.5
4 VCC (V)
4.5
5
5.5
3
3.5
4 VCC (V)
4.5
5
5.5
Mixer In to IF Feedthrough vs VCC
12.5 12.4 12.3 MIXER NOISE FIGURE (dB) 12.2 12.1 25C 12.0 11.9 -40C 11.8 11.7 11.6 11.5 2.5 LNA NOISE FIGURE (dB) 85C 2.0 1.9 85C 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 2.5 -40C 25C
LNA Gain (Enabled) vs VCC
3
3.5
4 VCC (V)
4.5
5
5.5
3
3.5
4 VCC (V)
4.5
5
5.5
Mixer Noise Figure vs VCC
-95.0 -95.0
LNA Noise Figure vs VCC
-100.0 VCO PHASE NOISE (dBc/Hz VCO PHASE NOISE (dBc/Hz
-100.0
-105.0
-105.0
85C
-110.0
85C 25C
-110.0 40C -115.0
-115.0 40C -120.0
-120.0
-125.0 2.5
3
3.5
4 VCC (V)
4.5
5
5.5
-125.0 2.5
3
3.5
4 VCC (V)
4.5
5
5.5
VCO Phase Noise vs VCC @60kHz Offset Figure 6.
VCO Phase Noise vs VCC @ 30kHz Offset
SR01427
1997 Nov 07
8
Philips Semiconductors
Product specification
1GHz low voltage LNA, mixer and VCO
SA621
CH2
S11
1 U FS
1:
40.1 -129.6 200 MHz 24.0 -62.9 400 MHz 18.6 -37.4 600 MHz 14.1 10.5 pF -16.7 900 MHz
2:
3:
4:
4
1 3 2
START
100. 000 000 MHz
STOP
1 200. 000 000 MHz
A. S11 DATA
CH1
S22
1 U FS
1:
40.5 -28.2 700 MHz 36.1 -12.4 800 MHz 34.7 3.5 900 MHz 34.9 3.74 661.4 pH 900 MHz
2:
3: 4
4:
1 2 3
START
700. 000 000 MHz
STOP
1 200. 000 000 MHz
B. S22 DATA
Figure 7. Typical S11 of LNA at 3V
SR01252
1997 Nov 07
9
Philips Semiconductors
Product specification
1GHz low voltage LNA, mixer and VCO
SA621
CH1
S22
1 U FS
1:
40.5 -28.2 700 MHz 36.1 -12.4 800 MHz 34.7 3.5 900 MHz 34.9 3.74 661.4 pH 900 MHz
2:
3: 4
4:
1 2 3
START
700. 000 000 MHz
STOP
1 200. 000 000 MHz
SR01253
Figure 8. Typical S22 of LNA at 3V
CH1 S21 10 U FS
1: 3 2: 4 3:
6.7 U 142.5 200 MHz 5.9 U 112.3 400 MHz 5.9 U 78.1 600 MHz 4.5 U 21.2 900 MHz
2 1
4:
START
100. 000 000 MHz
STOP
1 200. 000 000 MHz
SR01254
Figure 9. Typical S21 of LNA at 3V
1997 Nov 07
10
Philips Semiconductors
Product specification
1GHz low voltage LNA, mixer and VCO
SA621
CH2
S12
50 mU FS
4
1:
1.9 mU 83.0 200 MHz 1.6 mU 133.5 400 MHz 11.4 mU 141.5 600 MHz 27.9 mU 106.1 900 MHz
2:
3: 3 21 4:
START
100. 000 000 MHz
STOP
1 200. 000 000 MHz
SR01255
Figure 10. Typical S12 of LNA at 3V
CH1 S11 1 U FS
1:
122.8 -144.9 200 MHz 58.0 -86.8 400 MHz 45.9 -62.3 600 MHz 26.6 -43.2 4.085 pF 900 MHz
2:
3:
4:
1 4 3 2
START
100. 000 000 MHz
STOP
1 200. 000 000 MHz
SR01256
Figure 11. Typical S11 of Mixer at 3V
1997 Nov 07
11
Philips Semiconductors
Product specification
1GHz low voltage LNA, mixer and VCO
SA621
CH1
S11/M
1 U FS
4
3 2
1:
-11.766 289.41 200 MHz 11.953 134.05 400 MHz 16.555 78.48 600 MHz 18.652 31.516 5.5732 nH 900 MHz
2: 1 3:
3:
START
100. 000 000 MHz
STOP
1 200. 000 000 MHz
SR01257
Figure 12. Typical 1/S11 of VCO (Pin 7)at 3V
1997 Nov 07
12
Philips Semiconductors
Product specification
1GHz low voltage LNA, mixer and VCO
SA621
Table 2. Typical S-Parameters of LNA at 3V
LNA Freq (MHz) 100 122 144 166 188 210 232 254 276 298 320 342 364 386 408 430 452 474 496 518 540 562 584 606 628 650 672 694 716 738 760 782 804 826 848 870 892 914 936 958 980 1002 1024 1046 1068 1090 1112 1134 1156 1178 1200 |S11| (U) 0.86 0.86 0.85 0.83 0.82 0.81 0.80 0.79 0.78 0.76 0.75 0.73 0.71 0.70 0.69 0.68 0.69 0.68 0.67 0.66 0.65 0.63 0.62 0.62 0.61 0.61 0.60 0.60 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.58 0.58 0.57 0.57 1997 Nov 07
13
Philips Semiconductors
Product specification
1GHz low voltage LNA, mixer and VCO
SA621
Table 3. Typical S-Parameters of Mixer at 3V
Mixer Freq (MHz) 100 122 144 166 188 210 232 254 276 298 320 342 364 386 408 430 452 474 496 518 540 562 584 606 628 650 |S11| (U) 0.73 0.73 0.72 0.72 0.72 0.71 0.70 0.70 0.69 0.68 0.67 0.66 0.64 0.63 0.62 0.61 0.59 0.58 0.57 0.56 0.55 0.55 0.54 0.54 0.54 0.54 1997 Nov 07
14
Philips Semiconductors
Product specification
1GHz low voltage dLNA, mixer and VCO
SA621
TSSOP20: plastic thin shrink small outline package; 20 leads; body width 4.4 mm
SOT360-1
1997 Nov 07
15
Philips Semiconductors
Product specification
1GHz low voltage dLNA, mixer and VCO
SA621
DEFINITIONS
Data Sheet Identification
Objective Specification
Product Status
Formative or in Design
Definition
This data sheet contains the design target or goal specifications for product development. Specifications may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes at any time without notice, in order to improve design and supply the best possible product.
Preliminary Specification
Preproduction Product
Product Specification
Full Production
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. LIFE SUPPORT APPLICATIONS Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices, or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088-3409 Telephone 800-234-7381 Philips Semiconductors and Philips Electronics North America Corporation register eligible circuits under the Semiconductor Chip Protection Act. (c) Copyright Philips Electronics North America Corporation 1996 All rights reserved. Printed in U.S.A.
Philips Semiconductors
1997 Nov 07 16

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