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Product Description
Sirenza Microdevices' SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, W-CDMA applications. The matte tin finish on Sirenza's lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. Typical IP3, P1dB, Gain
50 45 40 35 30 OIP3 P1dB Gain
SXA-389 SXA-389Z
Pb
RoHS Compliant & Green Package
400-2500 MHz 1/4 W Medium Power GaAs HBT Amplifier with Active Bias
Product Features
* On-chip Active Bias Control, Single 5V Supply * High Output 3rd Order Intercept: +42 to +44 dBm typ. * High P1dB : +25 dBm typ. * High Gain: +19 dB at 850 MHz * High Efficiency: consumes only 600 mW * Patented High Reliability GaAs HBT Technology * Surface-Mountable Power Plastic Package
dBm
25 20 15 10 5 0 850 MHz 1960 MHz 2140 MHz 2450 MHz
Applications
* W-CDMA, PCS, Cellular Systems * High Linearity IF Amplifiers * Multi-Carrier Applications
Symbol
Parameters: Test Conditions: Z0 = 50 Ohms, Ta = 25C f = 850 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 850 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 850 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 850 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 850 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz V cc = 5 V
Units
Min.
Typ. 25 25 25 25 19 14 13.5 13 1.3:1 1.4:1 1.3:1 1.1:1 43 44 42 42 4.7 5.5 6.0 6.0
Max.
P 1dB
Output Power at 1dB Compression
dB m
24
S 21
Small signal gain
dB
12.5
15
S11
Input VSWR
-
OIP3
Output Third Order Intercept Point (Pout/Tone = +11 dBm, Tone spacing = 1 MHz)
dB m
39
NF
Noise Figure
dB
ID PDISS Rth, j-l
Device Current Operating Dissipated Power Thermal Resistance (junction - lead)
mA mW C/W
90
115 575 100
122 610
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
Phone: (800) SMI-MMIC
EDS-102231 Rev D
303 S. Technology Ct. Broomfield, CO 80021
1
http://www.sirenza.com
SXA-389
1/4 W GaAs HBT Amplifier
Note: Tuned for Output IP3
850 MHz Application Circuit Data, VCC= 5V, ID= 120mA
P1dB vs. Frequency
30 28 26 24 22 20 0 .8 0 .8 5
GHz
dB
Gain vs. Frequency
25
-40C
23 21 19
25C 85C -4 0 C 0 .9 0 .9 5
25C 85C
dBm
17 15 0 .8 0.8 5
GHz
0 .9
0.9 5
Input/Output Return Loss, Isolation vs. Frequency, T=25C
0 -5 -1 0 -1 5 -2 0 -2 5 -3 0 0 .8 0 .8 5
GHz
Third Order Intercept vs. Frequency (POUT per tone = 11dBm)
50 47
dBm
-40C 25 C 85 C
44 41 38 35
dB
S11 S12 S22
0 .9
0 .9 5
0 .8
0 .8 5
GHz
0 .9
0 .9 5
50 47 44
dBm
Third Order Intercept vs. Tone Power Frequency = 850 MHz
Adjacent Channel Power (dBc)
-40 -45 -50 -55 -60 -65 -70 -75
880 MHz Adjacent Channel Power vs. Channel Output Power
-40C 25C 85C
41 38 35 0 3 6 9 12 15
25C 85C -4 0C
10
12
14
16
18
20
POUT per tone (dBm)
Channel Output Power (dBm) IS-95, 9 Channels Forward
Phone: (800) SMI-MMIC 303 S. Technology Ct. Broomfield, CO 80021
http://www.sirenza.com
EDS-102231 Rev D
2
SXA-389
1/4 W GaAs HBT Amplifier
Note: Tuned for Output IP3
1960 MHz Application Circuit Data, VCC= 5V, ID= 120mA
P1dB vs. Frequency
30 28 26 24 22 20 1.93 25C 85C -40C 1.94 1.95 1.96
GHz
dB
Gain vs. Frequency
20 18 16 14 12 10 1.93 25C 85C -40C
dBm
1.97
1.98
1.99
1.94
1.95
1.96
GHz
1.97
1.98
1.99
Input/Output Return Loss, Isolation vs. Frequency, T=25C
0 S 11 -5 -1 0 -1 5 -2 0 -2 5 -3 0 1 .9 3
dBm
Third Order Intercept vs. Frequency (POUT per tone = 11dBm)
50
S 12 S 22
47 44 41 38 35 1.93 -40C 25C 85C
dB
1 .9 4
1 .9 5
1 .9 6
GHz
1 .9 7
1 .9 8
1 .9 9
1.94
1.95
1.96
GHz
1.97
1.98
1.99
Third Order Intercept vs. Tone Power Frequency = 1.96 GHz
50
Adjacent Channel Power (dBc)
1960 MHz Adjacent Channel Power vs. Channel Output Power
-40 -45 -50 -55 -60 -65 -70 -75 25C 85C -40C 10 12 14 16 18 20
47 44 41 38 35 0 3 6 9 12 15 -4 0C 2 5C 8 5C
dBm
POUT per tone (dBm)
Channel Output Power (dBm) IS-95, 9 Channels Forward
Phone: (800) SMI-MMIC 303 S. Technology Ct. Broomfield, CO 80021
http://www.sirenza.com
EDS-102231 Rev D
3
SXA-389
1/4 W GaAs HBT Amplifier
Note: Tuned for Output IP3
2140 MHz Application Circuit Data, VCC= 5V, ID= 120mA
P1dB vs. Frequency
30 28 26
dB
Gain vs. Frequency
20 25C 18 16 14 85C -40C
dBm
24 22 20 2.11 25C 85C -40C 2.12 2.13 2.14
GHz
12 10 2.11
2.15
2.16
2.17
2.12
2.13
2.14
GHz
2.15
2.16
2.17
Input/Output Return Loss, Isolation vs. Frequency, T=25C
0 -5 -10 -15 -20 -25 -30 2.11 S 11 S 12 S 22
dBm
Third Order Intercept vs. Frequency (POUT per tone = 11dBm)
50 -40C 47 44 41 38 35 2.11 25C 85C
dB
2.12
2.13
2.14
GHz
2.15
2.16
2.17
2.12
2.13
2.14
GHz
2.15
2.16
2.17
Third Order Intercept vs. Tone Power Frequency = 2.14 GHz
50 47 44 41 38 35 0 3 6 9 12 15
POUT per tone (dBm)
2140 MHz Adjacent Channel Power vs. Channel Output Power
-40
Adjacent Channel Power (dBc)
-40C 25C 85C
-45 -50 -55 -60 -65 -70 10 11 12 13 14 15 16 17
Channel Output Power (dBm) W-CDMA, 64 DPCH + Overhead
dBm
25C 85C -40C
Phone: (800) SMI-MMIC 303 S. Technology Ct. Broomfield, CO 80021
http://www.sirenza.com
EDS-102231 Rev D
4
SXA-389
1/4 W GaAs HBT Amplifier
Note: Tuned for Output IP3
2450 MHz Application Circuit Data, VCC= 5V, ID= 120mA
P1dB vs. Frequency
30 28 26
dBm
Gain vs. Frequency
20 18 16
dB
25 C 85 C -40 C
24 25C 22 20 2.4 2.42 2.44
GHz
14
85C -40C 2.46 2.48 2.5
12 10 2 .4 2.42 2.44
GHz
2.46
2.48
2.5
Input/Output Return Loss, Isolation vs. Frequency, T=25C
0 -5 -10 -15
dB
Third Order Intercept vs. Frequency (POUT per tone = 11dBm)
50 47 -40C 25C 85C
dBm
S 11 S 12 S 22
44 41 38 35
-20 -25 -30 -35 -40 2.4 2.42 2.44
GHz
2.46
2.48
2.5
2.4
2.42
2.44
GHz
2.46
2.48
2.5
Third Order Intercept vs. Tone Power Frequency = 2.45 GHz
50 -40C 47 44 41 38 35 0 3 6 9 12 15
POUT per tone (dBm)
25C 85C
dBm
Phone: (800) SMI-MMIC 303 S. Technology Ct. Broomfield, CO 80021
http://www.sirenza.com
EDS-102231 Rev D
5
SXA-389
1/4 W GaAs HBT Amplifier
Application Schematic
V cc
C1 C2 C3 L1 C4 C7
Z =5 0 , E L1 Z = 50 , E L 2 Z = 5 0 , E L3
R F in
R Fout
L2 C5 C6
Ref. Des.
Vendor Series Matsuo 267M3502104K Rohm MCH18
850 MHz 0.1uF 10% 1000pF 5% 47pF 5% 47pF 5% 3.9pF 0.25pF 3.9pF 0.25pF
1960 MHz 0.1uF 10% 1000pF 5% 22pF 5% 22pF 5% 0.5pF 0.25pF
2140 MHz 0.1uF 10% 1000pF 5% 22pF 5% 22pF 5% 0.5pF 0.25pF
2450 MHz 0.1uF 10% 1000pF 5% 22pF 5% 1.2pF 0.25pF 0.5pF 0.25pF
Ref. Des.
Vendor Series
850 MHz 2 33nH 5% 1.2nH 0.3nH 9.7
1960 MHz 1 18nH 5% thru
2140 MHz 1 18nH 5% thru
2450 MHz 1 15nH 5% thru
C1
C6 Position
C2
L1
Toko LL1608-FS
C 3, C 7
Rohm MCH18
L2
Toko LL1608-FS
C4
Rohm MCH18
E L1
-
-
-
C5
Rohm MCH18
E L2
5.6
-
-
-
C6
Rohm MCH18
E L3
13.2
28.7
31.4
35.9
Evaluation Board Layout
RFin C1 C2 C3 L1
+
RFout
C4
L2
C7
C5
12
C6
SIRENZA MICRODEVICES SOT-89 Eval Board ECB-101499 Rev B
Phone: (800) SMI-MMIC 303 S. Technology Ct. Broomfield, CO 80021
http://www.sirenza.com
EDS-102231 Rev D
6
SXA-389
1/4 W GaAs HBT Amplifier
Absolute Maximum Ratings
Parameter Max. Supply Current (ID) Max. Device Voltage (VCC) Max. Power Dissipation Max. RF Input Power Max. Junction Temp. (TJ ) Operating Lead Temp. (TL) Max. Storage Temp. Absolute Limit 240 mA 6.0 V 1500 mW 100 mW +165 C -40 to +85 C +150 C
Part Number Ordering Information
Part Number SXA-389 SXA-389B
Devices Per Reel 1000 1000
Reel Size 7" 7"
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVCC (max) < (TJ - TL)/Rth,j-l
ESD: Class 1B (Passes 500V ESD Pulse)
Appropriate precautions in handling, packaging and testing devices must be observed.
Pin Description
Pin # 1 2 3 4 Function B a se GND & Emi tter C ollector B a se P i n C onnecti on to ground. Use vi a holes to reduce lead i nductance. Place vi as as close to ground leads as possi ble. C ollector Pi n D escription
GND & Emi tter Same as Pi n 2
Part Identification Marking 4 4
XA3
2
XA3Z
3
Recommended Mounting Configuration for Optimum RF and Thermal Performance
Ground Plane
1
2
3
1
2
1
2
1
3
3
Plated Thru Holes (0.020" DIA)
See Application Note AN-075 for Package Outline Drawing
Machine Screws (Optional)
SXA-389B
Phone: (800) SMI-MMIC 303 S. Technology Ct. Broomfield, CO 80021
http://www.sirenza.com
EDS-102231 Rev D
7

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