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| Transistor 2SB1488 Silicon PNP triple diffusion planer type Unit: mm For power switching 0.15 6.90.1 0.7 4.0 1.05 2.50.1 0.05 (1.45) 0.8 0.5 4.50.1 s Features q q q q High foward current transfer ratio hFE. High-speed switching. High collector to base voltage VCBO. Allowing supply with the radial taping. (Ta=25C) Ratings -400 -400 -7 -1 - 0.5 1 150 -55 ~ +150 Unit V V V A A W C 0.65 max. 1.0 1.0 0.2 0.45-0.05 0.45-0.05 +0.1 +0.1 2.50.5 2.50.5 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * 1 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.20.1 C 0.45+0.1 - 0.05 0.65 max. Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 2.50.1 (HW type) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Collector current fall time Collector output capacitance *1h FE1 (Ta=25C) Symbol ICBO ICEO IEBO VCEO hFE1*1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Cob Conditions VCB = -400V, IE = 0 VCE = -100V, IB = 0 VBE = -5V, IC = 0 IC = -1mA, IB = 0 VCE = -5V, IC = -50mA VCE = -5V, IC = -300mA*2 IC = -100mA, IB = -10mA*2 IC = -100mA, IB = -10mA*2 VCB = -10V, IE = 0.1A, f = 1MHz*2 IC = -100mA, RL = 1.5k IB1 = -10mA, IB2 = 10mA VCC = -150V VCB = -10V, IE = 0, f = 1MHz -400 80 10 - 0.25 - 0.8 25 0.4 5.5 0.5 20 *2 min typ max -1 -1 -1 14.50.5 Unit A A A V 280 - 0.5 -1.2 V V MHz s s s pF 1.0 6.5 1.0 40 Rank classification P 80 ~ 160 Q 130 ~ 280 Pulse measurement Rank hFE1 1 Transistor PC -- Ta 1.2 -1.0 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25C - 0.9 2SB1488 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 Ta=100C 25C -25C VCE(sat) -- IC IC/IB=5 Collector power dissipation PC (W) 1.0 0.8 Collector current IC (mA) - 0.8 - 0.7 - 0.6 IB=100mA - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 10mA 5mA 1mA 0.5mA 0.1mA 0 -2 -4 -6 -8 -10 -12 50mA 0.6 0.4 - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 0.2 0 0 20 40 60 80 100 120 140 160 0 -1 -3 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC -100 hFE -- IC IC/IB=5 10000 VCE=-5V 1000 300 100 30 10 3 1 0.3 fT -- IC VCE=-10V Ta=25C Base to emitter saturation voltage VBE(sat) (V) -10 -3 25C -1 Ta=-25C 100C 1000 300 100 30 10 3 1 - 0.001 - 0.003 - 0.01 - 0.03 - 0.1 - 0.3 25C Ta=100C -25C - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 Transition frequency fT (MHz) -1 -30 Forward current transfer ratio hFE 3000 -1 -3 -10 0.1 - 0.001 - 0.003 - 0.01 - 0.03 - 0.1 - 0.3 -1 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 100 100 IE=0 f=1MHz Ta=25C 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=5(-IB1=IB2) VCC=-100V Ta=25C tstg Collector output capacitance Cob (pF) 90 80 70 60 50 40 30 20 10 0 -1 Switching time ton,tstg,tf (s) 10 3 1 tf 0.3 0.1 0.03 0.01 ton -3 -10 -30 -100 0 - 0.2 - 0.4 - 0.6 - 0.8 - 1.0 Collector to base voltage VCB (V) Collector current IC (A) 2 |
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