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| Ordering number : ENA0899 2SC6083 SANYO Semiconductors DATA SHEET 2SC6083 Features * * * * NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW300s, duty cycle10% Conditions Ratings 700 350 8 1 2 0.5 0.6 150 --55 to +150 Unit V V V A A A W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 hFE3 fT Cob Conditions VCB=350V, IE=0A VEB=5V, IC=0A VCE=5V, IC=0.1A VCE=5V, IC=0.5A VCE=5V, IC=1mA VCE=10V, IC=0.1A VCB=10V, f=1MHz 100 10 60 20 8 MHz pF Ratings min typ max 10 10 200 Unit A A Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80107CB TI IM TC-00000829 No. A0899-1/4 2SC6083 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=0.5A, IB=0.1A IC=0.5A, IB=0.1A IC=1mA, IE=0A IC=5mA, RBE= IE=1mA, IC=0A IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400, VCC=200V IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400, VCC=200V IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400, VCC=200V 700 350 8 1.0 2.5 0.3 Ratings min typ max 0.8 1.5 Unit V V V V V s s s Package Dimensions unit : mm (typ) 7524-004 4.0 2.2 Switching Time Test Circuit PW=20s D.C.1% INPUT IB1 OUTPUT IB2 VR 50 RB 1.8 3.0 RL 0.4 0.5 0.6 + 100F 15.0 0.4 VBE= --5V + 470F VCC=200V 0.4 1 1.3 0.7 2 3 1.3 1 : Emitter 2 : Collector 3 : Base SANYO : SPA 3.0 3.8 0.7 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 2 IC -- VCE 20 0 mA 1.0 0.9 IC -- VBE VCE=5V 150mA 100mA 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Collector Current, IC -- A 30mA 20mA 70mA 80mA 90mA IB=0mA 4 6 8 10 IT12786 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT12787 Collector-to-Emitter Voltage, VCE -- V Base-to-Emitter Voltage, VBE -- V Ta= 120 C 25C --40C 50mA 40mA 60mA 10mA Collector Current, IC -- A No. A0899-2/4 2SC6083 5 3 2 hFE -- IC VCE=5V 5 3 2 hFE -- IC Ta=120C 25C DC Current Gain, hFE DC Current Gain, hFE .0V =5 E VC 100 7 5 3 2 --40C 100 7 5 3 2 2.0 .0V V1 0.7 V 10 7 5 3 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 IT12788 10 7 5 3 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 IT12789 Collector Current, IC -- A 3 2 VCE(sat) -- IC Collector Current, IC -- A 10 7 5 3 2 1.0 5 3 2 0.1 7 5 0.001 VCE(sat) -- IC IC / IB=5 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 1.0 7 5 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 0.1 7 5 3 2 0.001 2 3 5 7 0.01 2 3 2 5C = Ta --4 0C 25 C 5 7 0.1 2 3 Collector Current, IC -- A 3 5 7 1.0 IT12790 2 3 5 7 0.01 2 3 5 7 0.1 Ta= 1 C 0 12 20 C --40 C 2 3 5 7 1.0 IT12791 7 VBE(sat) -- IC Collector Current, IC -- A 1.0 SW Time -- IC IC / IB=5 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Switching Time, SW Time -- s 2 7 tst g 5 IC / IB1=10 IB2 / IB1=10 R load 1.0 7 5 Ta= --40C 25C 120C 3 tf 2 3 2 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 3 2 Forward Bias A S O ICP=2A IC=1A Collector Current, IC -- A 5 7 1.0 IT12792 0.1 0.1 2 3 5 7 3 2 1.0 Reverse Bias A S O L=500H IB2= --0.2A Tc=25C Single pulse Collector Current, IC -- A 1.0 IT12793 s 00 =1 s PT 00 3 Collector Current, IC -- A Collector Current, IC -- A 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 7 5 3 2 0.1 7 5 3 1m s 10 DC op er ati m s on 0.001 0.1 Ta=25C Single pulse 23 5 7 1.0 23 5 7 10 23 5 7 100 23 57 2 0.01 100 2 3 5 7 Collector-to-Emitter Voltage, VCE -- V IT12794 Collector-to-Emitter Voltage, VCE -- V 1000 IT12795 No. A0899-3/4 2SC6083 700 PC -- Ta Collector Dissipation, PC -- mW 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT12796 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2007. Specifications and information herein are subject to change without notice. PS No. A0899-4/4 |
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