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| AF4920N N-Channel Enhancement Mode Power MOSFET Features - Low On-resistance - Simple Drive Requirement - Dual N MOSFET Package General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Product Summary BVDSS (V) 30 RDS(ON) (m) 18 ID (A) 8.2 Pin Assignments Pin Descriptions Pin Name S1/2 G1/2 D1/2 Description Channel 1/2 Source Channel 1/2 Gate Channel 1/2 Drain S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 SO-8 Ordering information AX Feature F :MOSFET PN 4920N X X X Package S: SO-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Oct 13, 2005 1/5 AF4920N N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range TA=25C TA=70C TA=25C Rating 30 20 8.2 6.7 30 2 0.016 -55 to 150 -55 to 150 Units V V A A W W/C C C Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient (Note 1) Max. Maximum 62.5 Units C/W Electrical Characteristics at TJ=25C unless otherwise specified Symbol BVDSS BVDSS / TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss RG Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note 3) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (TJ=25oC) Drain-Source Leakage Current (TJ=70oC) Gate-Source Leakage Total Gate Charge (Note 3) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-On Delay Time (Note 3) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Test Conditions VGS=0V, ID=250uA Reference to 25oC, ID=1mA VGS=10V, ID=6A VGS=4.5V, ID=4A VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=20V ID=8A, VDS=24V, VGS=4.5V VDS=15V, ID=1A, RG=3.3, VGS=10V RD=15 VGS=0V, VDS=25V, f=1.0MHz f=1.0MHz Min. 30 1 Typ. 0.03 15 23 6 14 12 8 34 16 1450 320 230 0.9 Max. 18 28 3 1 uA 25 100 30 2320 nA nC Units V V/oC m V S ns pF Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage (Note 3) Reverse Recovery Time (Note 3) Reverse Recovery Charge 2 Test Conditions IS=1.7A, VGS=0V IS=8A, VGS=0V, dl/dt=100A/s o Min. - Typ. 27 18 Max. 1.2 - Unit V ns nC Note 1: Surface mounted on 1 in copper pad of FR4 board; 135 C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width 300us, duty cycle 2%. Anachip Corp. www.anachip.com.tw 2/5 Rev. 1.0 Oct 13, 2005 AF4920N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Anachip Corp. www.anachip.com.tw 3/5 Rev. 1.0 Oct 13, 2005 AF4920N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Anachip Corp. www.anachip.com.tw 4/5 Rev. 1.0 Oct 13, 2005 AF4920N N-Channel Enhancement Mode Power MOSFET Marking Information SO-8 ( Top View ) 8 Logo Part Number 4920N AA Y W X 1 Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: "4" =2004 Factory code ~ Package Information Package Type: SO-8 D 8 7 6 5 E1 E 1 2 e 3 B 4 DETAIL A L A1 A C DETAIL A 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Symbol A A1 B C D E E1 L e Dimensions In Millimeters Min. Nom. Max. 1.35 1.55 1.75 0.10 0.18 0.25 0.33 0.41 0.51 0.19 0.22 0.25 4.80 4.90 5.00 5.80 6.15 6.50 3.80 3.90 4.00 0.38 0.71 1.27 0o 4o 8o 1.27 TYP. Anachip Corp. www.anachip.com.tw 5/5 Rev. 1.0 Oct 13, 2005 |
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