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| C945 NPN Transistors P b Lead(Pb)-Free TO-92 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 0.4 Junction Temperature Storage Temperature Tj TSTG +150 -40 to + 150 C C WEITRON http://www.weitron.com.tw 1/4 08-Feb-06 C945 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain VCE=6.0V, IC=1mA VCE=6.0V, IC=0.1mA Collector-Emitter Saturation Voltage IC=100mA, IB=10mA Base-Emitter Voltage IC=100mA, IB=10mA TransitionFrequence VCE = 6V, IC = 10mA, f = 30MHz Collector Output Capacitance VCB = 10V, IE = 0, f = 1MHz Noise figure VCE = 6V, IC = 0.1mA, Rg = 10k, f = 1KMHz hFE1 hFE2 VCE(sat) VBE(sat) fT Cob NF 70 40 200 4.0 700 0.3 1.0 3.0 10 V V MHz pF dB CLASSIFICATION OF hFE1 Rank Range O 70-140 Y 120-240 GR 200-400 BL 350-700 WEITRON http://www.weitron.com.tw 2/4 08-Feb-06 C945 FIG1. Total Power Dissipation vs Ambient Temperature FIG.2 Collector Current vs Collector to Emitter Voltage FIG.3 Collector and Bade Saturation Voltage vs Collector Current FIG.4 Gain Bandwidth Product vs Emitter Current http://www.weitron.com.tw WEITRON 3/4 08-Feb-06 C945 TO-92 Outline Dimensions E unit:mm C J K G Dim A B C D E G H J K L H TO-92 Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 B L http://www.weitron.com.tw WEITRON D A 4/4 08-Feb-06 |
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