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| Ordering number : ENN7399 CPH6519 NPN Epitaxial Planar Silicon Composite Transistors CPH6519 Low-Frequency General-Purpose Amplifier, Driver Applications Features * Package Dimensions unit : mm 2212 [CPH6519] 6 5 4 0.6 0.2 * * * * * 1 2 0.2 3 0.95 0.6 Composite type with 2 transistors contained in the CPH package currently in use, improving the mounting efficiency greatly. The CPH6519 is formed with two chips, being equivalent to the 2SC3689, placed in one package. Adoption of FBET process. High DC current gain (hFE=800 to 3200). High VEBO (VEBO15V). Excellent in thermal equilibrium and pair capability. 2.9 0.15 0.05 1.6 2.8 0.4 Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg 1unit Conditions 1 : Base 1 2 : Emitter 1 3 : Collector 2 4 : Emitter 2 5 : Base 2 6 : Collector 1 SANYO : CPH6 Ratings 60 50 15 100 200 20 350 500 150 --55 to +150 Unit V V V mA mA mA mW mW C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Symbol ICBO IEBO hFE hFE(small/ large) VCB=40V, IE=0 VEB=10V, IC=0 VCE=5V, IC=10mA VCE=5V, IC=10mA 800 0.8 1500 0.98 Conditions Ratings min typ max 0.1 0.1 3200 Unit A A Marking : 3F 0.7 0.9 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22503 TS IM TA-100338 No.7399-1/4 CPH6519 Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Conditions VCE=10V, IC=10mA VCB=10V, f=1MHz IC=50mA, IB=1mA IC=50mA, IB=1mA IC=10A, IE=0 IC=1mA, RBE= IE=10A, IC=0 60 50 15 Ratings min typ 200 1.5 0.1 0.8 0.5 1.1 max Unit MHz pF V V V V V Note : The specifications shown above are for each individual transistor. Electrical Connection C1 B2 E2 TR2 TR1 B1 E1 C2 (Top view) 100 IC -- VCE From top 500A 450A 400A 350A 300A 20 IC -- VCE Collector Current, IC -- mA Collector Current, IC -- mA 80 60 250A 200A 150A 100A 16 12 10A 9A 8A 7A 6A 40 50A 5A 8 4A 3A 2A 20 4 1A 0 0 0.2 0.4 0.6 IB=0 0.8 1.0 ITR10565 0 0 10 20 30 IB=0 40 50 ITR10566 Collector-to-Emitter Voltage, VCE -- V 120 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 10000 7 5 hFE -- IC VCE=5V VCE=5V 100 Collector Current, IC -- mA Ta=120C DC Current Gain, hFE 25C --40C 80 3 2 Ta=120C 25C --40C 60 1000 7 5 40 20 3 0 0 0.2 0.4 0.6 0.8 1.0 1.2 ITR10567 2 7 1.0 2 3 5 7 10 2 3 5 7 100 2 ITR10568 Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- mA No.7399-2/4 CPH6519 5 f T -- IC VCE=10V 10 7 Cob -- VCB f=1MHz Gain-Bandwidth Product, f T -- MHz Output Capacitance, Cob -- pF 3 2 5 3 2 100 7 5 1.0 7 5 3 3 2 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 1.0 7 7 100 2 ITR10569 10 7 7 1.0 2 3 5 7 10 2 3 5 VCE(sat) -- IC Collector-to-Base Voltage, VCB -- V 7 100 ITR10570 VBE(sat) -- IC IC / IB=50 IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 0.1 7 5 3 2 7 1.0 2 3 5 7 10 2 3 5 1.0 7 5 3 2 Ta=120C 25C --40C 7 100 2 ITR10571 Ta= --40C 120C 25C 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 3 2 0.1 Collector Current, IC -- mA 600 7 100 2 ITR10572 ASO ICP=0.2A IC=0.1A 300s PC -- Ta Collector Dissipation, PC -- mW 1m s 500 s m ms 10 100 Collector Current, IC -- A 7 5 3 2 0.01 7 5 3 2 DC op era tio 400 350 300 nT a= 25 C to ta ld 200 ip at io 1u n nit iss 100 0.001 1.0 0 2 3 5 7 10 2 3 5 7 0 25 50 75 100 125 150 175 IT05368 Collector-to-Emitter Voltage, VCE -- V IT05369 Ambient Temperature, Ta -- C No.7399-3/4 CPH6519 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2003. Specifications and information herein are subject to change without notice. PS No.7399-4/4 |
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