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| Excelics DATA SHEET * * * * * * HERMETIC 100mil CERAMIC FLANGE PACKAGE +26.0dBm TYPICAL OUTPUT POWER 7.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY EFA080A-100F Low Distortion GaAs Power FET 5DG 'LD * ' 7<3 7<3 All Dimensions In mils ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss Gain at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=2.0mA -12 -7 MIN 24.0 6.0 TYP 26.0 7.5 32 MAX UNIT dBm dB % 130 90 210 120 -2.0 -15 -14 58* 300 mA mS -3.5 V V V o Drain Breakdown Voltage Igd=1.0mA Source Breakdown Voltage Igs=1.0mA Thermal Resistance C/W * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -4V Vgs Drain Current Idss 250mA Ids Forward Gate Current 20mA 4mA Igsf Input Power 25dBm @ 3dB Compression Pin Channel Temperature 175oC 150oC Tch Storage Temperature -65/175oC -65/150oC Tstg Total Power Dissipation 2.5 W 2.0W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com EFA080A-100F DATA SHEET Low Distortion GaAs Power FET S-PARAMETERS FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 --- S11 --MAG ANG 0.959 -47.5 0.898 -81.6 0.854 -104.9 0.817 -126.2 0.785 -147.2 0.761 -163.3 0.738 179.2 0.718 163.2 0.731 140.3 0.753 125.5 0.742 121.7 0.707 115.5 0.709 96.7 0.708 77.6 0.680 65.4 0.658 53.2 0.664 42.2 0.654 33.6 0.623 26.4 0.697 15.6 8V, 1/2 Idss --- S21 ----- S12 --MAG ANG MAG ANG 6.007 149.5 0.028 54.7 5.050 119.7 0.042 38.4 4.182 97.3 0.050 26.7 3.635 78.0 0.054 17.3 3.268 59.5 0.059 8.8 2.964 42.1 0.063 1.0 2.690 24.1 0.065 -8.3 2.414 6.9 0.064 -16.5 2.132 -10.6 0.064 -24.6 1.913 -26.3 0.067 -31.4 1.826 -41.3 0.074 -39.8 1.752 -56.8 0.083 -47.6 1.655 -72.8 0.093 -57.3 1.567 -90.4 0.106 -69.1 1.509 -110.8 0.125 -85.0 1.419 -130.8 0.144 -99.9 1.354 -148.0 0.173 -111.8 1.316 -167.6 0.223 -127.5 1.216 171.4 0.277 -146.8 1.201 151.3 0.380 -167.1 --- S22 --MAG ANG 0.450 -32.8 0.446 -53.9 0.442 -68.6 0.442 -80.0 0.426 -89.3 0.378 -104.4 0.357 -124.2 0.366 -145.0 0.395 -150.2 0.401 -158.8 0.403 178.4 0.430 162.0 0.425 160.0 0.375 151.1 0.394 120.4 0.436 102.6 0.430 103.8 0.436 97.7 0.500 80.0 0.566 72.0 |
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