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| FDS8812NZ N-Channel PowerTrench(R) MOSFET March 2007 FDS8812NZ N-Channel PowerTrench(R) MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench(R) process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. tm 30V, 20A, 4.0m Features Max rDS(on) = 4.0m at VGS = 10V, ID = 20A Max rDS(on) = 4.9m at VGS = 4.5V, ID =18A HBM ESD protection level of 6.4kV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS compliant D D D D G S S Pin 1 S D D D S S S D G SO-8 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 4) (Note 1a) (Note 1b) (Note 1a) Ratings 30 20 20 80 661 2.5 1.0 -55 to +150 Units V V A mJ W C Thermal Characteristics RJC RJA RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) (Note 1b) 25 50 125 C/W Package Marking and Ordering Information Device Marking FDS8812NZ Device FDS8812NZ Reel Size 13" Tape Width 12mm Quantity 2500 units (c)2007 Fairchild Semiconductor Corporation FDS8812NZ Rev.C 1 www.fairchildsemi.com FDS8812NZ N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V 30 19 1 10 V mV/C A A On Characteristics (Note 2) VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 20A VGS = 4.5V, ID = 18A VGS = 10V, ID = 20A, TJ = 125C VDS = 5V, ID = 20A 1 1.8 -7 3.1 3.8 4.2 87 4.0 4.9 5.3 S m 3 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 5205 945 580 1.5 6925 1260 870 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0V to 10V VGS = 0V to 5V VDD = 15V ID = 20A VDD = 15V, ID = 20A VGS = 10V, RGEN = 6 18 13 55 12 90 49 16 18 33 24 88 22 126 69 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 2.1A (Note 2) 0.7 36 33 1.2 54 50 V ns nC IF = 20A, di/dt = 100A/s Notes: 1. RJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a) 50C/W when mounted on a 1in2 pad of 2 oz copper. b) 125C/W when mounted on a minimum pad . 2. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2%. 3. The diode connected between the gate and source serves only as protection against ESD . No gate overvoltage rating is implied. 4. Starting TJ = 25C, L = 3mH, IAS = 21A, VDD = 30V, VGS = 10V. FDS8812NZ Rev.C 2 www.fairchildsemi.com FDS8812NZ N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 80 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10.0V 2.5 VGS = 4.5V VGS = 3.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 3.0V ID, DRAIN CURRENT (A) 60 2.0 VGS = 3.5V 40 VGS = 3.0V 1.5 VGS = 4.0V VGS = 4.5V 20 1.0 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 10.0V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.5 0 20 40 60 80 VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 8 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID = 20A VGS = 10V 7 ID =10A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 6 5 4 3 2 TJ = 125oC TJ = 25oC -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On- Resistance vs Junction Temperature IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 100 VGS = 0V 80 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX ID, DRAIN CURRENT (A) 10 1 0.1 0.01 TJ = -55oC 60 VDD = 5V TJ = 150oC TJ = 25oC 40 TJ = 25oC TJ = 150oC TJ = -55oC 20 0 1.5 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.0 0.001 0.0 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDS8812NZ Rev.C 3 www.fairchildsemi.com FDS8812NZ N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 ID = 20A 10000 Ciss Coss 8 6 4 2 0 VDD = 10V VDD = 15V VDD =20V CAPACITANCE (pF) 1000 Crss f = 1MHz VGS = 0V 0 20 40 60 Qg, GATE CHARGE(nC) 80 100 100 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 Ig, GATE LEAKAGE CURRENT(A) -3 50 IAS, AVALANCHE CURRENT(A) 10 10 10 10 10 10 -4 VGS = 0V -5 10 TJ = 150oC TJ = 25oC -6 TJ = 125oC -7 TJ = 25oC -8 1 0.01 -9 0.1 1 10 100 tAV, TIME IN AVALANCHE(ms) 1000 0 5 10 15 20 25 30 VGS, GATE TO SOURCE VOLTAGE(V) Figure 9. Unclamped Inductive Switching Capability 24 ID, DRAIN CURRENT (A) Figure 10. Gate Leakage Current vs Gate to Source Voltage 300 ID, DRAIN CURRENT (A) 20 16 12 8 4 RJA = 50 C/W o 100 rDS(on) LIMITED 1ms VGS = 10V 10 10ms 100ms SINGLE PULSE TJ = MAX RATED = 125oC/W R JA VGS = 4.5V 1 1s 10s DC 0.1 TA = 25oC 0 25 50 75 100 125 o 150 0.01 0.01 0.1 1 10 100 TA, AMBIENT TEMPERATURE ( C) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature Figure 12. Forward Bias Safe Operating Area FDS8812NZ Rev.C 4 www.fairchildsemi.com FDS8812NZ N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) 3000 1000 VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 - T A ----------------------125 TA = 25oC 100 I = I25 10 1 SINGLE PULSE RJA = 125 C/W o 0.1 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 t, PULSE WIDTH (s) Figure 13. Single Pulse Maximum Power Dissipation 1 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZJA 0.1 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 EAK TJ = PDM x ZJA x RJA + TA 0.001 SINGLE PULSE RJA = 125 C/W o 0.0001 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 14. Transient Thermal Response Curve FDS8812NZ Rev.C 5 www.fairchildsemi.com FDS8812NZ N-Channel PowerTrench(R) MOSFET tm TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Across the board. Around the world.TM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM E2CMOSTM EcoSPARK(R) EnSignaTM FACT Quiet SeriesTM FACT(R) FAST(R) FASTrTM FPSTM FRFET(R) GlobalOptoisolatorTM GTOTM HiSeCTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANAR(R) PACMANTM POPTM Power220(R) Power247(R) PowerEdgeTM PowerSaverTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM The Power Franchise(R) TM TinyBoostTM TinyBuckTM tm TinyLogic(R) TINYOPTOTM TinyPowerTM TinyWireTM TruTranslationTM SerDesTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I24 (c)2007 Fairchild Semiconductor Corporation www.fairchildsemi.com |
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