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TLMS310. Vishay Semiconductors SMD LED in P-LCC-2 Package Color Super red Type TLMS310. Technology GaAsP on GaP Angle of Half Intensity o 60 Description These devices have been designed to meet the increasing demand for surface mounting technology. The package of the TLMS310. is the P-LCC-2 (equivalent to a size B tantalum capacitor). It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. Features D SMD LEDs with exceptional brightness D Luminous intensity categorized D Compatible with automatic placement equipment D EIA and ICE standard package D Compatible with infrared, vapor phase and wave solder processes according to CECC D Available in 8 mm tape D Low profile package D Non-diffused lens: excellent for coupling to light pipes and backlighting D Low power consumption D Luminous intensity ratio in one packaging unit IVmax/IVmin x 2.0, optional x 1.6 94 8553 Applications D Automotive: backlighting in dashboards and switches D Telecommunication: indicator and backlighting in telephone and fax D Indicator and backlight for audio and video equipment D Indicator and backlight in office equipment D Flat backlight for LCDs, switches and symbols D General use Document Number 83170 Rev. A2, 04-Jul-02 www.vishay.com 1 (6) TLMS310. Vishay Semiconductors Absolute Maximum Ratings Tamb = 25C, unless otherwise specified TLMS310., , , , Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient t5s mounted on PC board (pad size > 16 mm2) Tamb 60C tp 10 s Tamb 60C Test Conditions Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 6 30 0.5 100 100 -40 to +100 -40 to +100 260 400 Unit V mA A mW C C C C K/W Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Super red (TLMS310.) Parameter Luminous intensity y 1) Test Conditions IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 A VR = 0, f = 1MHz IF = 20 mA IF = 10 mA Type TLMS3100 TLMS3101 Symbol IV IV d p VF VR Cj TCVF TCd Min. 2.5 4 624 Typ. 7.5 Max. 12.5 636 Unit mcd nm nm deg Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance Temperature coefficient of VF Temperature coefficient of d 1) 640 60 2.0 6 7.0 -1.8 0.05 2.6 V V pF mV/K nm/K in one Packing Unit IVMin./ IVMax. x 1.6 www.vishay.com 2 (6) Document Number 83170 Rev. A1, 04-Jul-02 TLMS310. Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified) 125 Iv rel - Relative Luminous Intensity PV - Power Dissipation ( mW ) 0 10 20 30 100 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6 75 50 25 0 0 20 40 60 80 100 95 10904 Tamb - Ambient Temperature ( C ) 95 10319 Figure 1. Power Dissipation vs. Ambient Temperature Figure 4. Rel. Luminous Intensity vs. Angular Displacement 100.0 60 IF - Forward Current ( mA ) 50 40 30 20 10 0 0 95 10905 I F - Forward Current ( mA ) 20 40 60 80 100 10.0 1.0 0.1 0 16634 1 Tamb - Ambient Temperature ( C ) 2 3 4 VF - Forward Voltage ( V ) 5 Figure 2. Forward Current vs. Ambient Temperature 10000 IF - Forward Current ( mA ) tp/T=0.005 1000 0.01 0.02 0.05 100 0.2 0.5 DC 0.1 IVrel -Relative Luminous Intensity 100 Tambv60C Figure 5. Forward Current vs. Forward Voltage 2.0 1.6 1.2 0.8 0.4 0.0 10 1 0.01 95 9985 0.1 1 10 0 16635 tp - Pulse Length ( ms ) 20 40 60 80 Tamb - Ambient Temperature ( C ) 100 Figure 3. Forward Current vs. Pulse Length Figure 6. Rel. Luminous Intensity vs. Ambient Temperature Document Number 83170 Rev. A2, 04-Jul-02 www.vishay.com 3 (6) TLMS310. Vishay Semiconductors n VF - Change of Forward Voltage (mV) 200 100 50 0 -50 -100 -150 -200 -250 -300 0 16636 10.00 IVrel -Relative Luminous Intensity 20 40 60 80 100 150 1.00 0.10 Tamb - Ambient Temperature ( C ) 0.01 1.00 16638 10.00 VF - Forward Current ( mA ) 100.00 Figure 7. Change of Forward Voltage vs. Ambient Temperature n l d - Change of Dom. Wavelength (nm) 5 4 3 2 1 0 -1 -2 -3 0 16637 Figure 9. Rel. Luminous Intensity vs. Forward Current 1.2 IVrel -Relative Luminous Intensity 1.0 0.8 0.6 0.4 0.2 0.0 550 16639 20 40 60 80 100 Tamb - Ambient Temperature ( C ) 590 630 670 710 750 l - Wavelength ( nm ) Figure 8. Change of Dominant Wavelength vs. Ambient Temperature Figure 10. Rel. Luminous Intensity vs. Wavelength www.vishay.com 4 (6) Document Number 83170 Rev. A1, 04-Jul-02 TLMS310. Vishay Semiconductors Dimensions in mm 95 11314 PCB Layout in mm 95 10966 Document Number 83170 Rev. A2, 04-Jul-02 www.vishay.com 5 (6) TLMS310. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 (6) Document Number 83170 Rev. A1, 04-Jul-02 |
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