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| BFP620F E7764 NPN Silicon Germanium RF Transistor Preliminary data * High gain low noise RF transistor * Small package 1.4 x 0.8 x 0.59 mm * Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz * Maximum stable gain Gms = 21 dB at 1.8 GHz Gma = 10 dB at 6 GHz * Gold metallization for extra high reliability to p v ie w 4 3 3 4 XYs 2 1 TSFP-4 ACs 1 2 d ir e c tio n o f u n r e e lin g ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP620F E7764 Maximum Ratings Parameter Marking R2s 1=B Pin Configuration 2=E 3=C 4=E Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA T stg Symbol RthJS Package TSFP-4 Value 2.3 7.5 7.5 1.2 80 3 185 150 -65 ... 150 -65 ... 150 Value 290 Unit K/W mW C mA Unit V - Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 96C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 2) 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Oct-20-2003 BFP620F E7764 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 7.5 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 50 mA, VCE = 1.5 V hFE 100 180 320 IEBO 3 A ICBO 100 nA ICES 10 A V(BR)CEO 2.3 2.8 V Symbol min. Values typ. max. Unit 2 Oct-20-2003 BFP620F E7764 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 50 mA, VCE = 1.5 V, f = 1 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 1.5 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 1.5 V, f = 6 GHz, ZS = ZSopt Power gain, maximum stable1) IC = 50 mA, VCE = 1.5 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 50 mA, VCE = 1.5 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz Transducer gain IC = 50 mA, VCE = 1.5 V, ZS = ZL = 50 , f = 1.8 GHz IC = 50 mA, VCE = 1.5 V, ZS = ZL = 50 , f = 6 GHz Third order intercept point at output2) VCE = 2 V, I C = 50 mA, f = 1.8 GHz, ZS = ZL = 50 1dB Compression point at output IC = 50 mA, VCE = 2 V, ZS = ZL = 50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz Unit - 65 0.12 0.2 0.45 0.2 - GHz pF Ccb Cce Ceb F dB 0.7 1.3 21 dB G ms - G ma - 10 - dB |S21e|2 IP 3 19.5 9.5 25 - dB dBm P-1dB - 14 - 3 Oct-20-2003 BFP620F E7764 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = TITF1 0.22 1000 2 2 2 2.707 250.7 1.43 2.4 0.6 0.2 0.5 3 2 -0.0065 fA V V fF ps A V ns - - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = NK = FC = KF = TITF2 425 0.25 50 10 3.129 0.6 0.75 10 0 0.5 128.1 -1.42 0.8 7.291E-11 1.0E-5 A mA V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.025 21 1 18 1.522 2.364 0.3 1.5 124.9 1 0.52 1.078 298 fA pA mA V fF V eV K All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: To avoid high complexity of the package equivalent circuit, both emitter leads of TSFP-4 are combined in one electrical connection.RLxI are series resistors for the inductances LxI and Kxa-yb are the coupling coefficients between the inductances Lxa and Lyb . LB0 = LE0 = LC0 = KB0-E0 = KB0-C0 = KE0-C0 = CBE = CBC = CCE = LBI = RLBI = LEI = RLEI = LCI = RLI = KBI-EI = KBI-CI = KEI-CI = 0.22 0.28 0.22 0.1 0.01 0.11 34 2 33 0.42 0.15 0.26 0.11 0.35 0.13 -0.05 -0.08 0.2 nH nH nH fF fF fF nH nH nH - Valid up to 6GHz 4 Oct-20-2003 BFP620F E7764 Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p) 200 mW 10 3 160 K/W 120 100 80 60 40 20 0 0 90 105 120 C RthJS 140 Ptot 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 15 30 45 60 75 150 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp Permissible Pulse Load Ptotmax/P totDC = (tp) 10 1 Collector-base capacitance Ccb= (VCB) f = 1MHz 0.4 pF Ptotmax / PtotDC 0.3 CCB s 0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.25 0.2 0.15 0.1 0.05 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 0 1 2 3 4 5 6 V 8 tp VCB 5 Oct-20-2003 BFP620F E7764 Transition frequency fT = (IC) f = 1GHz VCE = Parameter in V 70 GHz 60 55 50 Power gain Gma, Gms = (IC) VCE = 1.5V f = Parameter in GHz 30 dB 0.9 1 to 2.3 26 24 22 1.8 fT 45 G 40 35 30 25 20 15 10 5 0 0 10 20 30 40 50 60 70 0.3 0.8 20 18 16 14 12 10 2.4 3 4 5 6 0.5 8 100 6 0 10 20 30 40 50 60 70 mA 90 80 mA IC IC Power Gain Gma, Gms = (f), |S21| = f (f) VCE = 1.5V, IC = 50mA 50 dB Power gain Gma, Gms = (VCE) IC = 50mA f = Parameter in GHz 30 dB 0.9 24 40 35 20 1.8 2.4 3 4 G G 30 25 20 15 10 5 0 Gms 16 12 8 5 6 |S21| Gma 4 0 -4 0.2 1 2 3 4 GHz 6 0.6 1 1.4 1.8 V 2.6 f VCE 6 Oct-20-2003 |
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