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MJD6039 Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers. Features http://onsemi.com * Lead Formed for Surface Mount Applications in Plastic Sleeves * * * * * * (No Suffix) Straight Lead Version in Plastic Sleeves ("-1" Suffix) Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb-Free Package is Available SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS 4 12 3 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector Current Base Current Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation (Note 1) @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range - Continuous - Peak Symbol VCEO VCB VEB IC IB PD PD Max 80 80 5 4 8 100 20 0.16 1.75 0.014 TJ, Tstg -65 to +150 Unit Vdc Vdc Vdc Adc mAdc W W/C W W/C C Y WW J6039 G DPAK CASE 369C STYLE 1 MARKING DIAGRAM YWW J 6039G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) Symbol RqJC RqJA Max 6.25 71.4 Unit C/W C/W = Year = Work Week = Device Code = Pb-Free Package ORDERING INFORMATION Device MJD6039T4 MJD6039T4G Package DPAK DPAK (Pb-Free) Shipping 2500 / Tape & Reel 2500 / Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 1 January, 2006 - Rev. 4 Publication Order Number: MJD6039/D MJD6039 RB 51 D1 +4V 8 k 120 t, TIME ( s) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) Collector-Cutoff Current (VCE = 40 Vdc, IB = 0) VCEO(sus) ICEO 80 - Vdc - 10 mAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 1 Adc, VCE = 4 Vdc) (IC = 2 Adc, VCE = 4 Vdc) hFE - 1000 500 - - - Collector-Emitter Saturation Voltage (IC = 2 Adc, IB = 8 mAdc) Base-Emitter On Voltage (IC = 2 Adc, VCE = 4 Vdc) VCE(sat) VBE(on) 2.5 Vdc - 2.8 Vdc DYNAMIC CHARACTERISTICS Small-Signal Current Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) hfe 25 - - Cob pF - 100 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA TUT V2 APPROX +8 V 0 V1 APPROX -12 V tr, tf 10 ns DUTY CYCLE = 1% VCC -30 V RC SCOPE 4 VCC = 30 V IC/IB = 250 2 tf 1 0.8 0.6 0.4 PNP NPN 0.1 td @ VBE(off) = 0 tr IB1 = IB2 TJ = 25C ts 25 ms FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. 0.2 0.04 0.06 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) 2 4 Figure 1. Switching Times Test Circuit Figure 2. Switching Times http://onsemi.com 2 MJD6039 TYPICAL ELECTRICAL CHARACTERISTICS 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.05 0.01 RqJC(t) = r(t) RqJC RqJC = 6.25C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 23 5 10 t, TIME OR PULSE WIDTH (ms) 20 50 100 200 300 500 1000 Figure 3. Thermal Response TA TC 2.5 25 0.1 ms PD, POWER DISSIPATION (WATTS) 0.5 ms 5 ms 2 20 TC IC, COLLECTOR CURRENT (AMPS) 10 7 5 3 2 1 0.7 0.5 0.3 0.2 0.1 1 2 3 5 7 10 1 ms 1.5 15 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TJ = 150C CURVES APPLY BELOW RATED VCEO 20 30 1 10 dc TA SURFACE MOUNT 0.5 5 50 70 100 0 0 25 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 75 100 T, TEMPERATURE (C) 125 150 Figure 4. Maximum Rated Forward Biased Safe Operating Area Figure 5. Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 6 and 7 is based on T J(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 200 TC = 25C C, CAPACITANCE (pF) 100 70 50 30 20 PNP NPN 0.2 0.4 0.6 1 2 4 6 10 20 40 Cob Cib 10 0.04 0.06 0.1 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance http://onsemi.com 3 MJD6039 TYPICAL ELECTRICAL CHARACTERISTICS VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 6k 4k hFE , DC CURRENT GAIN 3k 2k 25C TJ = 125C VCE = 3 V 3.4 TJ = 125C 3 2.6 2.2 1.8 1.4 1 0.6 0.1 0.2 0.5 1 2 5 10 20 50 IC = 0.5 A 1A 2A 4A -55 C 1k 800 600 400 300 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 100 IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (mA) Figure 7. DC Current Gain Figure 8. Collector Saturation Region 2.2 V, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C 1.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 250 + 0.8 *APPLIED FOR IC/IB < hFE/3 0 - 0.8 - 1.6 - 2.4 - 3.2 -4 qVC for VBE 25C to 150C 25C to 150C qVC for VCE(sat) - 55C to 25C 25C to 150C 1.4 VBE @ VCE = 3 V 1 VCE(sat) @ IC/IB = 250 0.6 0.2 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 - 4.8 0.04 0.06 0.1 0.2 0.4 0.6 1 2 3 4 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 9. "On" Voltages Figure 10. Temperature Coefficients 105 REVERSE IC, COLLECTOR CURRENT ( A) 104 103 102 TJ = 150C 101 100 100C 8k 60 BASE VCE = 30 V NPN MJD6039 COLLECTOR FORWARD 25C 10-1 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1 VBE, BASE-EMITTER VOLTAGE (VOLTS) +1.2 +1.4 EMITTER Figure 11. Collector Cut-Off Region Figure 12. Darlington Schematic http://onsemi.com 4 MJD6039 PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- -T- B V R 4 SEATING PLANE C E A S 1 2 3 Z U K F L D 2 PL G 0.13 (0.005) M J H T DIM A B C D E F G H J K L R S U V Z STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 MJD6039/D |
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