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| (R) STPS60150C POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF(AV) VRRM Tj VF(max) FEATURES AND BENEFITS 2 x 30 A 150 V 175C 0.76 V K A1 K A2 High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification A2 A1 K TO-220AB STPS60150CT DESCRIPTION Dual center tab Schottky rectifier suited for High Frequency server and telecom base station SMPS. Packaged in TO-220AB, this device combines high current rating and low volume to enhance both reliability and power density of the application. Table 2: Order Codes Part Number STPS60150CT Marking STPS60150CT Table 3: Absolute Ratings (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj dV/dt RMS forward voltage Average forward current Tc = 150C = 0.5 Per diode Per device tp = 10ms sinusoidal tp = 1s Tj = 25C Parameter Repetitive peak reverse voltage Value 150 60 30 60 270 17300 -65 to + 175 175 10000 Unit V A A A W C C V/s Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage 1 dPtot * : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink dTj Rth ( j - a ) October 2004 REV. 1 1/6 STPS60150C Table 4: Thermal Parameters Symbol Rth(j-c) Rth(c) Junction to case Coupling Parameter Per diode Total Value 1.0 0.7 0.4 Unit C/W When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 5: Static Electrical Characteristics (per diode) Symbol IR * VF ** Parameter Tests conditions VR = VRRM IF = 30A IF = 30A IF = 60A IF = 60A 0.72 0.97 0.86 Tj = 125C Forward voltage drop Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test: * tp = 5 ms, < 2% ** tp = 380 s, < 2% Min. Typ 3 3 Max. 15 10 0.94 0.76 1.05 0.92 Unit A mA V Reverse leakage current Tj = 25C To evaluate the conduction losses use the following equation: P = 0.6 x IF(AV) + 0.0053 IF (RMS) 2 2/6 STPS60150C Figure 1: Average forward power dissipation versus average forward current (per diode) PF(AV)(W) 30 35 Figure 2: Average forward current versus ambient temperature ( = 0.5, per diode) IF(AV)(A) 25 = 0.1 = 0.05 = 0.2 = 0.5 30 25 20 Rth(j-a)=Rth(j-c) 20 =1 15 15 10 10 Rth(j-a)=15C/W T 5 5 T IF(AV)(A) 0 0 5 10 15 20 25 =tp/T 30 tp 0 35 0 =tp/T 25 tp 50 Tamb(C) 75 100 125 150 175 Figure 3: Normalized avalanche derating versus pulse duration PARM(tp) PARM(1s) 1 power Figure 4: Normalized avalanche derating versus junction temperature PARM(tp) PARM(25C) power 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) IM(A) 350 300 Figure 6: Relative variation of thermal impedance junction to case versus pulse duration (per diode) Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 250 200 TC=50C 0.7 0.6 0.5 0.4 0.3 IM 150 TC=75C 100 TC=125C t 0.2 0.1 0.0 Single pulse 50 =0.5 t(s) 1.E-02 1.E-01 1.E+00 tp(s) 1.E-02 1.E-01 1.E+00 0 1.E-03 1.E-03 3/6 STPS60150C Figure 7: Reverse leakage current versus reverse voltage applied (typical values, per diode) IR(A) 1.E+05 10000 F=1MHz VOSC=30mVRMS Tj=25C Figure 8: Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 1.E+04 Tj=150C Tj=125C 1.E+03 Tj=100C 1.E+02 Tj=75C 1000 1.E+01 Tj=50C 1.E+00 Tj=25C VR(V) 1.E-01 0 25 50 75 100 125 150 VR(V) 100 1 10 100 1000 Figure 9: Forward voltage drop versus forward current (per diode) IFM(A) 100.0 Tj=125C (maximum values) 10.0 Tj=125C (typical values) Tj=25C (maximum values) 1.0 0.1 0.0 0.1 0.2 0.3 0.4 VFM(V) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 4/6 STPS60150C Figure 10: TO-220AB Package Mechanical Data REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 4.95 5.15 0.194 0.202 2.40 2.70 0.094 0.106 10 10.40 0.393 0.409 16.4 typ. 0.645 typ. 13 14 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.20 6.60 0.244 0.259 3.50 3.93 0.137 0.154 2.6 typ. 0.102 typ. 3.75 3.85 0.147 0.151 H2 Dia L5 C A L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. Table 6: Ordering Information Ordering type STPS60150CT Marking STPS60150CT Package TO-220AB Weight 2.20 g Base qty 50 Delivery mode Tube Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 m.N. Maximum torque value: 1.0 m.N. Table 7: Revision History Date 19-Oct-2004 Revision 1 First issue. Description of Changes 5/6 STPS60150C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 6/6 DataSheet 4 U .com |
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