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LESHAN RADIO COMPANY, LTD.
Dual Schottky Barrier Diode
MMBD352WT1
3
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra-fast switching circuits. * Very Low Capacitance -- Less Than 1.0 pF @ Zero Volts * Low Forward Voltage -- 0.5 Volts (Typ) @ IF = 10 mA
1 2
CASE 419-02 , STYLE 9 SOT-323 / SC - 70
1 ANODE CATHODE 3 CATHODE/ANODE
2
MAXIMUM RATINGS Rating Symbol VR Value 7.0 Unit VCC
Continuous Reverse Voltage THERMAL CHARACTERISTICS Characteristic
Symbol
(1)
Max 200 1.6 625 300 2.4 417
Unit mW mW/C C/W mW mW/C C/W C
Total Device Dissipation FR- 5 Board TA = 25C Derate above 25 Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient
PD
RJA PD
RJA
-55 to +150 Junction and Storage Temperature TJ, Tstg DEVICE MARKING MMBD352WT1 = M5 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Forward Voltage (IF = 10 mAdc) Reverse Voltage Leakage Current (VR = 3.0 V) (VR = 7.0 V) Capacitance (VR = 0 V, f = 1.0 MHz) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol VF IR -- -- -- Min --
Max 0.60
Unit V A
C
0.25 10 1.0
pF
MMBD352WT1-1/2
LESHAN RADIO COMPANY, LTD.
MMBD352WT1
TYPICAL CHARACTERISTICS
100 I F, FORWARD CURRENT (mA)
1.0
10 TA = -40C
C, CAPACITANCE (pF) 0.8
TA = 85C
0.9
0.8
1.0 TA = 25C
0.7
0.1 0.3 0.4 0.5 0.6 0.7 VF, FORWARD VOLTAGE (VOLTS)
0.6 0 1.0 2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Forward Voltage
Figure 2. Capacitance
MMBD352WT1-2/2

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