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| MMBT6521LT1 Amplifier Transistor NPN Silicon Features * Pb-Free Package is Available MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current -- Continuous Symbol VCEO VCBO VEBO IC Value 25 40 4.0 100 Unit Vdc Vdc Vdc mAdc http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 -55 to +150 mW mW/C C/W C 556 mW mW/C C/W Max Unit 1 2 3 SOT-23 (TO -236) CASE 318 -08 STYLE 6 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. RO M G G 1 RO = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBT6521LT1 MMBT6521LT1G Package SOT-23 SOT-23 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 1 January, 2006 - Rev. 4 Publication Order Number: MMBT6521LT1/D MMBT6521LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 0.5 mAdc, IB = 0) Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc) (IC = 2.0 mAdc, VCE = 10 Vdc) Collector -Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 10 mAdc, VCE = 5.0 Vdc, Power Bandwidth = 15.7 kHz, 3.0 dB points @ = 10 Hz and 10 kHz) Cobo - NF - 3.0 3.5 dB pF hFE 150 300 VCE(sat) - 0.5 - 600 Vdc - V(BR)CEO 25 V(BR)EBO 4.0 ICBO - IEBO - 10 0.5 - mAdc nAdc - Vdc Vdc Symbol Min Max Unit RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model EQUIVALENT SWITCHING TIME TEST CIRCUITS +3.0 V 300 ns DUTY CYCLE = 2% -0.5 V <1.0 ns +10.9 V 10 k CS < 4.0 pF* 275 +3.0 V +10.9 V 10 k CS < 4.0 pF* 275 10 < t1 < 500 ms DUTY CYCLE = 2% 0 -9.1 V t1 < 1.0 ns 1N916 *Total shunt capacitance of test jig and connectors Figure 2. Turn-On Time Figure 3. Turn-Off Time http://onsemi.com 2 MMBT6521LT1 TYPICAL NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 mA BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 30 mA 10 mA IC = 1.0 mA 300 mA 100 mA BANDWIDTH = 1.0 Hz RS 10 7.0 5.0 10 mA 3.0 100 mA 30 mA Figure 4. Noise Voltage Figure 5. Noise Current NOISE FIGURE CONTOURS (VCE = 5.0 Vdc, TA = 25C) 500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB BANDWIDTH = 1.0 Hz 1M 500 k 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 RS , SOURCE RESISTANCE (OHMS) BANDWIDTH = 1.0 Hz 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1k 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1k Figure 6. Narrow Band, 100 Hz 500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 10 20 30 50 70 100 200 300 500 700 1k 10 Hz to 15.7 kHz Figure 7. Narrow Band, 1.0 kHz Noise Figure is defined as: NF + 20 log10 en In K T RS en2 ) 4KTRS ) In 2RS2 1 2 4KTRS = Noise Voltage of the Transistor referred to the input. (Figure 3) = Noise Current of the Transistor referred to the input. (Figure 4) = Boltzman's Constant (1.38 x 10-23 j/K) = Temperature of the Source Resistance (K) = Source Resistance (Ohms) IC, COLLECTOR CURRENT (mA) Figure 8. Wideband http://onsemi.com 3 MMBT6521LT1 TYPICAL STATIC CHARACTERISTICS 400 TJ = 125C h FE, DC CURRENT GAIN 200 25C -55 C 80 60 40 0.004 0.006 0.01 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 100 Figure 9. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C IC, COLLECTOR CURRENT (mA) 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA 100 TA = 25C PULSE WIDTH = 300 ms 80 DUTY CYCLE 2.0% IB = 500 mA 400 mA 300 mA 0.6 60 200 mA 40 100 mA 20 0 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 Figure 10. Collector Saturation Region Figure 11. Collector Characteristics 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 0.1 TJ = 25C V, TEMPERATURE COEFFICIENTS (mV/C) 1.4 1.6 0.8 *APPLIES for IC/IB hFE/2 25C to 125C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1.0 V 0 *qVC for VCE(sat) - 55C to 25C -0.8 25C to 125C -1.6 qVB for VBE 0.2 - 55C to 25C 50 100 VCE(sat) @ IC/IB = 10 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 -2.4 0.1 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 12. "On" Voltages Figure 13. Temperature Coefficients http://onsemi.com 4 MMBT6521LT1 TYPICAL DYNAMIC CHARACTERISTICS 300 200 100 70 50 30 20 10 7.0 5.0 3.0 1.0 2.0 td @ VBE(off) = 0.5 Vdc tr 1000 700 500 300 200 t, TIME (ns) 100 70 50 30 20 10 1.0 tf ts VCC = 3.0 V IC/IB = 10 TJ = 25C t, TIME (ns) VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100 20 30 5.0 7.0 10 3.0 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 14. Turn-On Time f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 15. Turn-Off Time 500 TJ = 25C f = 100 MHz 300 200 C, CAPACITANCE (pF) VCE = 20 V 5.0 V 10 7.0 5.0 Cib Cob TJ = 25C f = 1.0 MHz 3.0 2.0 100 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 16. Current-Gain -- Bandwidth Product Figure 17. Capacitance 20 hie , INPUT IMPEDANCE (k ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 hfe 200 @ IC = 1.0 mA hoe, OUTPUT ADMITTANCE (m mhos) VCE = 10 Vdc f = 1.0 kHz TA = 25C 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 VCE = 10 Vdc f = 1.0 kHz TA = 25C hfe 200 @ IC = 1.0 mA 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 Figure 18. Input Impedance Figure 19. Output Admittance http://onsemi.com 5 MMBT6521LT1 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 P(pk) t1 t2 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k FIGURE 21 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZqJA(t) = r(t) w RqJA TJ(pk) - TA = P(pk) ZqJA(t) 0.01 0.01 0.02 Figure 20. Thermal Response 104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 10-1 10-2 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO DESIGN NOTE: USE OF THERMAL RESPONSE DATA -4 0 -2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (C) Figure 21. A train of periodical power pulses can be represented by the model as shown in Figure 21. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 20 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 20 by the steady state value RqJA. Example: The MPS6521 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 20 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88C. For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com. The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 22 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 20. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 1.0 ms TC = 25C TA = 25C dc 100 ms 10 ms 1.0 s dc TJ = 150C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 4.0 6.0 8.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 Figure 22. http://onsemi.com 6 MMBT6521LT1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN D 3 SEE VIEW C E 1 2 HE c b e q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 A L A1 L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 7 MMBT6521LT1D |
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