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  Datasheet File OCR Text:
 LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
MMVL409T1
These devices are designed for general frequency control and tuning applications. They provide solid-state reliability in replacement of mechanical tuning methods.
VOLTAGEVARIABLE CAPACITANCEDIODE
1
* High Q with Guaranteed Minimum Values at VHF Frequencies * Controlled and Uniform Tuning Ratio * Surface Mount Package * Device Marking: X5
1 CATHODE 2 ANODE
2
PLASTIC, CASE 477 SOD- 323
ORDERING INFORMATION
Device MMVL409T1 Package SOD-323 Shipping 3000 / Tape & Reel
MAXIMUM RATINGS
Symbol VR IF Symbol PD Rating Continuous Reverse Voltage Peak Forward Current Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Value 20 200 Max 200 1.57 635 150 Unit Vdc mAdc Unit mW mW/C C/W C
THERMAL CHARACTERISTICS
RJA TJ, Tstg *FR-4 Minimum Pad
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Reverse BreakdownVoltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 15 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Symbol V(BR)R IR TCC Min 20 -- -- Typ -- -- 300 Max -- 0.1 -- Unit Vdc Adc ppm/C
Ct, Diode Capacitance Q, Figure of Merit VR = 3.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc pF f = 50 MHz Device Min Nom Max Min MMVL409T1 26 29 32 200 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc.
CR, Capacitance Ratio C3/C8 f = 1.0 MHz(1) Min Max 1.5 1.9
MMVL409T1-1/2
LESHAN RADIO COMPANY, LTD.
MMVL409T1
TYPICAL CHARACTERISTICS
CT, DIODE CAPACITANCE (pF)
Q, FIGURE OF MERIT
VR, REVERSE VOLTAGE (VOLTS)
f, FREQUENCY (MHz)
Figure 1. Diode Capacitance
C t , DIODE CAPACITANCE (NORMALIZED)
Figure 2. Figure of Merit
I R, REVERSE CURRENT (nA)
TA,AMBIENT TEMPERATURE (C)
TA, AMBIENT TEMPERATURE (C)
Figure 3. Leakage Current
Figure 4. Diode Capacitance
MMVL409T1-2/2


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