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Preliminary
Product Description
Sirenza Microdevices' SGA-9289 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=27.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9289 is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and 3V. The matte tin finish on Sirenza's lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.
SGA-9289 SGA-9289Z
Pb
RoHS Compliant & Green Package
Medium Power Discrete SiGe Transistor
Product Features
* * * * * * * * Available in RoHS compliant Green packaging 50-3000 MHz Operation 42.5 dBm Ouput IP3 Typical at 1.96 GHz 12.0 dB Gain Typical at 1.96 GHz 27.5 dBm P1dB Typical at 1.96 GHz 2.4 dB NF Typical at 0.9 GHz Cost Effective 3-5 V Operation
Typical Gmax, OIP3, P1dB @ 5V,270mA
25 23 21 19 44
OIP3
42 38 36
17 15 13 11 9 7 5 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Gmax
OIP3, P1dB (dBm)
40
Gmax (dB)
34 32 30 28 26 24
Applications
* * * * Wireless Infrastructure Driver Amplifiers CATV Amplifiers Wireless Data, WLL Amplifiers AN-022 contains detailed application circuits
P1dB
Frequency (GHz)
Symbol
Test Frequency Device Characteristics, T = 25C [1] 100% Tested VCE = 5V, ICQ =280mA (unless otherw ise noted) [2] Sample Tested Maximum Available Gain ZS=ZS*, ZL=ZL* Power Gain ZS=ZSOPT, ZL=ZLOPT Output 1dB Compression Point ZS=ZSOPT, ZL=ZLOPT Output Third Order Intercept Point ZS=ZSOPT, ZL=ZLOPT, POUT= +13 dBm per tone Noise Figure ZS=ZSOPT, ZL=ZLOPT Collector - Emitter Breakdown Voltage DC current gain Thermal Resistance (junction-to-lead) Operating Voltage (collector-to-emitter) Operating Current f = 900 MHz f = 1960 MHz f = 900 MHz [1] f = 1960 MHz [2] f = 900 MHz f = 1960 MHz [2] f = 900 MHz f = 1960 MHz [2] f = 900 MHz f = 1960 MHz
Units
Min.
Typ. 20.5 13.1
Max.
GMAX G P 1dB OIP3 NF B V C EO hFE Rth V CE I
dB dB dB m dB m dB V 7.5 100 C/W V mA 250 16.2 11.0 26.0 40.0
17.7 12.0 28.0 27.5 42.0 42.5 2.4 2.5 8.5 180 32
19.2 13.0
300
5.5 280 320
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 1
http://www.sirenza.com
EDS-101498 Rev G
SGA-9289 Medium Power Discrete SiGe Transistor Maximum Recommended Operational Dissipated Power
Absolute Limit
10 mA 400 mA
Total Dissipated Power (W)
Absolute Maximum Ratings
Parameter
Max Base Current (IB) Max Device Current (ICE) Max Collector-Emitter Voltage (VCEO) Max Collector-Base Voltage (VCBO) Max Emitter-Base Voltage (VEBO) Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp. *Note: Load condition, ZL = 50 Ohms
2.4 2.0 1.6 1.2 0.8 0.4 0.0 -40 -10 20 50 80 110 140 Lead Tempe rature (C)
Operational Limit (Tj<130C)
7V 20 V 4.8 V +150C See Graph +150C
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l TL=TLEAD
Typical Performance - Engineering Application Circuits (See AN-022)
Freq (MHz ) 945 1960 2140 2440
1
VCE (V) 5 5 5 5
ICQ (mA) 287 292 293 287
P1dB OIP31 (dBm) (dBm) 27.8 27.5 27.7 27.5 42.0 42.0 42.0 42.0
Gain (dB) 17.8 12.1 11.1 9.8
S11 (dB) -19 -24 -11 -17
S 22 (dB) -11 -21 -20 -20
NF (dB) 2.5 2.5 2.8 3.0
ZSOPT ( ) 2.93 - j3.92 4.75 - j9.12 4.30 - j9.09 4.05 - j13.78
ZLOPT ( ) 15.81 + j1.57 10.3 - j4.87 13.4 + j2.31 11.76 - j9.2
POUT= +13 dBm per tone for VCE=5V, 1 MHz tone spacing
Freq (MHz ) 945 1960 2440
2
VCE (V) 3 3 3
ICQ (mA) 312 315 315
P1dB OIP32 (dBm) (dBm) 25.4 26.0 26.1 38.6 39.3 38.0
Gain (dB) 16.8 11.0 9.4
S11 (dB) -18 -18 -29
S 22 (dB) -9 -15 -17
NF (dB) 2.6 2.9 3.4
ZSOPT ( ) 5.61 - j4.75 3.23 - j5.67 4.07 - 14.25
ZLOPT ( ) 6.51 + j2.58 4.95 + j1.73 11.62 - j11.83
POUT= +10 dBm per tone for VCE=3V, 1 MHz tone spacing
Data above represents typical performance of the application circuits noted in Application Note AN-022. Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing instructions and other key issues to be considered. For the latest application notes please visit our site at www.sirenza.com or call your local sales representative.
C
B ZLOPT
ZSOPT
E
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101498 Rev G
2
SGA-9289 Medium Power Discrete SiGe Transistor
De-embedded S-Parameters (ZS=ZL=50 Ohms, VCE=5V, ICQ=270mA, 25 C)
Insertion Gain & Isolation
45 0
Isolation
Insertion Gain vs Temperature
25 20
-12 -24 -36
Gain, Gmax (dB)
35 25 15 5
Gain
Isolation (dB)
Gain (dB)
15 10 5 0 -5
T = -40, 25, 85C
Gmax
-48 -60
-5 0 1 2 3 4 5 6 7 8
-10 0 1 2 3 4 5 6 7 8
Frequency (GHz) S11 vs Frequency
1.0 0.5
Frequency (GHz) S22 vs Frequency
1.0 2.0 0.5 2.0
5 GHz 4 GHz
3 GHz
0.2
8 GHz
5.0 0.2
5 GHz 4 GHz 3 GHz 2 GHz
8 GHz
5.0
2 GHz 1 GHz
0.0 0.2 0.5 1.0 2.0 5.0 inf 0.0
1 GHz
0.2 0.5 1.0 2.0 5.0 inf
50 MHz S11
0.2 5.0 0.2
S22 50 MHz
5.0
0.5
2.0
0.5
2.0
1.0
1.0
Note: S-parameters are de-embedded to the device leads with Z S=Z L=50. The data represents typical performace of the device. De-embedded s-parameters can be downloaded from our website (www.sirenza.com).
700 600 500
DC-IV Curves
IC (mA)
400 300 200 100 0 0 2 4 6 8
Ib = 0.2 - 2.0 mA , 0.2 mA steps T=25 C
VCE (V)
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101498 Rev G
3
SGA-9289 Medium Power Discrete SiGe Transistor
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
Part Number Ordering Information
P art N umber S GA -9289 S GA -9289Z R eel S iz e 13" 13" D evices/R eel 3000 3000
Pin Description
Pin #
1 2 3 4
Function
B a se Emitter Collector Emitter RF Input
Description
Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. RF Output Same as Pin 2
Part Symbolization The part will be symbolized with the "P2" ("P2Z" for RoHS version) designator and a dot signifying pin 1 on the top surface of the package.
Mounting and Thermal Considerations It is very important that adequate heat sinking be provided to minimize the device junction temperature. The following items should be implemented to maximize MTTF and RF performance.
Package Dimensions
.161
3
.177 .068
P2
.096
.016 .019 .118
4
1. Multiple solder-filled vias are required directly below the ground tab (pin 4). [CRITICAL] 2. Incorporate a large ground pad area with multiple platedthrough vias around pin 4 of the device. [CRITICAL] 3. Use two point board seating to lower the thermal resistance between the PCB and mounting plate. Place machine screws as close to the ground tab (pin 4) as possible. [RECOMMENDED] 4. Use 2 ounce copper to improve the PCB's heat spreading capability. [RECOMMENDED]
1
2
.041
.059
.015
DIMENSIONS ARE IN INCHES
Recommended Mounting Configuration for Optimum RF and Thermal Performance
Ground Plane Plated Thru Holes (0.020" DIA) SOT-89 Package
Machine Screws
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101498 Rev G
4

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