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| BC817-16/BC817-25 BC817-40 General Purpose Transistor NPN Silicon COLLECTOR 3 3 1 2 SOT-23 1 BASE 2 EMITTER M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 45 50 5.0 500 Unit Vdc Vdc Vdc mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (Note 1.)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient (Note 1.) Total Device Dissipation Alumina Substrate, (Note 2.) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient (Note 2.) Junction and Storage, Temperature Range Symbol PD R qJA PD R qJA TJ,Tstg Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/ C C/W mW mW/ C C/W C Device Marking BC817-16=6A, BC817-25=6B, BC817-40=6C 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina WE ITR O N http://www.weitron.com.tw BC817-16/BC817-25 BC817-40 WE IT R ON (TA=25 C Unless Otherwise noted) Electrical Characteristics Off Characteristics Characteristics Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC= 10mA) Collector-Emitter Breakdown Voltage (IC=10 A ,VEB=0) Emitter-Base Breakdown Voltage (IE=1.0 A) Collector Cutoff Current (VCB=20V) (VCB=20V, TA=150 C) V(BR)CEO V(BR)CES V(BR)EBO ICBO 45 50 5.0 - - 100 5.0 V V V nA mA On Characteristics DC Current Gain (IC= 100mA, VCE=1.0V) BC817-16 BC817-25 BC817-40 (IC= 500mA, VCE=1.0V) Collector-Emitter Saturation Voltage (IC= 500mA, IB=50mA) Base-Emitter On Voltage (IC= 500mA, VCE=1.0V) VCE(sat) hFE 100 160 250 40 0.7 V 250 400 600 - VBE(on) - - 1.2 V Small-signal Characteristics Current-Gain-Bandwidth Product (IC= 10mA, VCE= 5.0Vdc, f=100MHz) Output Capacitance (VCB= 10V, f=1.0MHz) fT Cobo 100 10 MHz pF WEITRON http://www.weitron.com.tw BC817-16/BC817-25 BC817-40 1000 hFE , DC CURRENT GAIN VCE = 1 V TJ = 25 C 100 10 0.1 1.0 10 100 IC, COLLECTOR CURRENT (AMP) 1000 Figure 1. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS ) 1.0 TJ = 25 C 0.8 0.6 0.4 0.2 0 0.01 IC = 10 mA 100 mA 300 mA 500 mA V, VOLTAGE (VOLTS) 1.0 TA = 25 C 0.8 0.6 0.4 0.2 VCE(sat) @ I C/I B = 10 0.1 1 10 IB , BASE CURRENT (mA) 100 0 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1 V Figure 2. Saturation Region Figure 3. "On" V oltages q V, TEMPERATURE COEFFICIENTS (mV/ C) +1 VC for VCE(sat) C, CAPACITANCE (pF) 100 0 -1 -2 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 4. T emperature Coefficients WEITRON http://www.weitron.com.tw q q Cib 10 VB for VBE Cob 1000 1 0.1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 5. Capacitances BC817-16/BC817-25 BC817-40 SOT-23 Package Outline Dimension S OT -23 A TOP VIEW D E G H B C K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw |
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