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PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10136 is a 6-watt GOLDMOS FET intended for large signal amplifier applications from to 1.0 GHz. It operates at 57% efficiency with 19 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. Performance at 960 MHz, 28 Volts - Output Power = 6 Watts - Efficiency = 57% Typ - Power Gain = 19 dB Typ Full Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel 100% Lot Traceability Typical Output Power & Efficiency vs. Input Power 10 Efficiency 70 56 42 Efficiency (%) X * Output Power (Watts) 8 6 4 2 Output Pow er 0 0.00 0.05 0.10 VDD = 28 V IDQ = 70 mA f = 960 MHz 28 14 0 0.15 A-1 234 569 935 101 36 Input Power (Watts) Package 20244 RF Specifications (100% Tested) Characteristic Common Source Power Gain (VDD = 28 V, POUT = 1 W, IDQ = 70 mA, f = 960 MHz) Power Output at 1 dB Compressed (VDD = 28 V, IDQ = 70 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 6 W, IDQ = 70 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 6 W, IDQ = 70 mA, f = 960 MHz-- all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated. Symbol Gps P-1dB h Y Min 18 6.0 50 -- Typ 19 7.5 57 -- Max -- -- -- 10:1 Units dB Watts % -- e 1 PTF 10136 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol V(BR)DSS IDSS VGS(th) gfs e Min 65 -- 3.0 -- Typ -- -- -- 0.3 Max -- 1 5.0 -- Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 0.5 A Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC Symbol VDSS VGS TJ PD Value 65 20 200 39 0.22 -40 to +150 4.5 Unit Vdc Vdc C Watts W/C C C/W Typical Performance Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency 75 22 Gain (dB) 20 60 18 16 Efficiency (%) 45 14 VDD = 28 V 12 30 IDQ = 70 mA 10 Output Pow er (W) 8 15 6 4 0 840 860 880 900 920 940 960 980 100 0 Broadband Test Fixture Performance 24 60 Efficiency (%) Gain (dB) 16 Output Power & Efficiency 20 50 Gain Gain VDD = 28 V IDQ = 70 mA POUT = 6 W Return Loss (dB) 40 -8 30 -15 20 -23 1000 12 8 960 970 980 990 Frequency (MHz) Frequency (MHz) 2 Return Loss Efficiency e Power Gain vs. Output Power 21 10 PTF 10136 Output Power vs. Supply Voltage Output Power (Watts) 20 IDQ = 70 mA IDQ = 35 mA 8 6 4 2 0 Power Gain (dB) 19 18 17 16 15 14 IDQ = 20 mA VDD = 28 V f = 960 MHz IDQ = 70 mA f = 960 MHz 0.1 1.0 10.0 24 26 28 30 32 Output Power (Watts) Supply Voltage (Volts) Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) 0 Capacitance vs. Supply Voltage 20 3.0 Cds and Cgs (pF) -10 IMD (dBc) -20 -30 -40 -50 -60 0 2 4 6 3rd Order 5th 7th 12 8 4 0 0 2.0 Cds Crss 10 20 30 40 1.5 1.0 0.5 8 10 Output Power (Watts-PEP) Supply Voltage (Volts) Bias Voltage vs. Temperature 1.03 1.02 Bias Voltage (V) 1.01 1 0.99 0.98 0.97 0.96 0.95 -20 30 Temp. (C) 80 130 0.05 0.145 0.24 0.335 0.43 0.525 Voltage normalized to 1.0 V Series show current (A) 3 Crss (pF) VDD = 28 V, IDQ = 70 mA f1 = 960.0 MHz, f2 = 960.1 MHz 16 Cgs VGS = 0 V f = 1 MHz 2.5 PTF 10136 Impedance Data VDD = 28 V, IDQ = 70 mA, P-1dB = 6 W D e Z0 = 50 W Z Load Z Source G S Frequency MHz 840 860 880 900 920 940 960 980 1000 R Z Source W jX 7.2 7.1 7.1 6.9 6.8 5.7 5.5 5.1 4.9 R 8.9 9.2 9.7 9.6 1.6 1.4 1.4 1.3 1.2 1.2 1.3 1.4 1.7 Z Load W jX 15.0 13.1 12.6 12.5 11.9 11.7 11.1 11.2 11.1 10.4 10.6 14.3 14.4 16.3 4 e (VDS = 28 V, ID = 200 mA) PTF 10136 Typical Scattering Parameters f (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 S11 Mag 0.962 0.925 0.918 0.913 0.906 0.900 0.896 0.894 0.895 0.896 0.897 0.901 0.900 0.905 0.908 0.910 0.917 0.916 0.919 0.923 0.925 0.932 0.929 0.930 0.934 0.935 0.943 0.942 0.942 0.946 0.943 0.951 0.951 0.951 0.952 0.947 0.951 0.951 0.949 0.953 0.947 0.950 0.946 S21 Ang -65.3 -78.2 -95.7 -109 -120 -128 -134 -140 -144 -148 -152 -155 -158 -160 -162 -165 -167 -169 -171 -172 -174 -176 -177 -179 180 178 177 176 174 173 171 170 169 167 166 165 163 162 161 160 159 157 156 S12 Ang 138 129 116 106 96.8 89.2 82.5 76.4 70.9 65.9 61.1 56.9 52.7 48.7 45.0 41.2 37.8 34.6 31.2 28.4 25.2 22.4 19.7 16.8 14.5 11.9 9.38 7.16 4.51 2.46 -0.02 -2.40 -4.21 -6.51 -8.48 -10.8 -13.0 -14.7 -16.8 -18.7 -20.8 -22.9 -24.2 S22 Ang 48.1 39.0 28.5 19.7 12.4 6.10 0.77 -3.81 -7.93 -11.6 -15.0 -17.5 -19.8 -21.4 -22.9 -24.2 -24.3 -24.3 -22.7 -20.5 -16.5 -10.7 -1.76 9.41 22.3 33.2 43.6 52.3 59.0 64.1 67.2 69.7 71.9 72.2 72.5 72.0 71.8 71.9 71.3 71.1 70.4 69.4 68.6 Mag 22.2 20.0 17.4 15.0 13.0 11.4 9.98 8.84 7.90 7.09 6.41 5.85 5.33 4.89 4.49 4.14 3.85 3.56 3.31 3.09 2.88 2.70 2.53 2.38 2.24 2.10 2.00 1.89 1.80 1.71 1.62 1.55 1.48 1.41 1.35 1.28 1.24 1.18 1.13 1.09 1.05 1.01 0.982 Mag 0.016 0.018 0.021 0.022 0.023 0.023 0.022 0.022 0.021 0.020 0.019 0.018 0.017 0.015 0.014 0.013 0.012 0.011 0.009 0.008 0.007 0.006 0.006 0.005 0.005 0.005 0.005 0.006 0.007 0.008 0.009 0.010 0.011 0.012 0.013 0.014 0.015 0.017 0.018 0.019 0.020 0.021 0.022 Mag 0.888 0.853 0.810 0.776 0.754 0.742 0.737 0.735 0.739 0.743 0.752 0.763 0.771 0.782 0.787 0.797 0.808 0.817 0.828 0.833 0.841 0.849 0.855 0.864 0.871 0.875 0.883 0.883 0.891 0.897 0.902 0.911 0.911 0.911 0.912 0.911 0.920 0.920 0.923 0.925 0.922 0.929 0.930 Ang -31.8 -37.7 -46.7 -54.3 -61.2 -67.1 -72.9 -78.3 -83.4 -88.4 -93.2 -97.5 -102 -106 -110 -113 -117 -120 -123 -126 -129 -132 -135 -138 -140 -142 -145 -147 -149 -151 -153 -155 -157 -159 -161 -163 -165 -166 -168 -170 -171 -173 -175 5 PTF 10136 Test Circuit e Test Circit Schematic fo f=960 MHz DUT l6 l1 l2, l3 l4 l5 PTF 10136 LDMOS Transistor 0.221 l 960 MHz Microstrip 8.9 W 0.020 l 960 MHz Microstrip 41.0 W 0.190 l 960 MHz Microstrip 14.1 W 0.024 l 960 MHz Microstrip 50 W 0.034 l 960 MHz MIcrostrip 50 W C1, C2, C3, C6 C4 C5 C7 C8 J1, J2 L1 R1, R2, R3 Circuit Board 36 pF, Capacitor ATC 100 B 0.1F, 50 V, Capacitor Digi-Key P4525-ND 100 mF, 50 V, Capacitor, Digi-Key P5782-ND 0.7 mF ATC 100 B 5.1F ATC 100 B Connector, SMA, Female, Panel Mount N/A 4 Turns, 22 AWG, .085 Dia I.D. Magnet Wire N/A Resistor, 220ohm, 1/4W Digi-Key 2.2QBK .031" thick, er = 4.0, G200, AlliedSignal, 2 oz. copper C6 Placement Diagram (not to scale) 6 e PTF 10136 ERICSSON ERICSSON 10136 INPUT 10136 OUT PUT Artwork ( not to scale ) Case Outline Specifications Package 20244 Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 1998, 1999, 2000, 2001 Ericsson Inc. EUS/KR 1522-PTF 10136 Uen Rev. B 03-15-01 7 |
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