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| S DP /B 55N03L S amHop Microelectronics C orp. S eptember , 2002 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S ( m W ) TYP ID 55A R DS (on) S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & TO-263 package. 12.5 @ V G S = 10V 20 @ V G S = 4.5V D D G D S G S G S DP S E R IE S TO-220 S DB S E R IE S TO-263(DD-P AK) S ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed a S ymbol VDS VGS @ TJ=125 C ID IDM IS PD TJ, TS TG Limit 30 20 55 140 55 75 0.5 -65 to 175 Unit V V A A A W W/ C C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Derate above 25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 1 2.5 62.5 C /W C /W S DP /B 55N03L E LE CTR ICAL CHAR ACTE R IS TICS (TC =25 C unless otherwise noted) 4 Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS b Condition VGS = 0V, ID = 250uA VDS = 24V, VGS =0V VGS = 16V, VDS = 0V VDS = VGS, ID = 250uA VGS = 10V, ID = 27A VGS = 4.5V, ID = 22A VGS = 10V, VDS = 10V VDS = 10V, ID = 27A Min Typ Max Unit 30 10 100 V uA nA V m ohm m ohm ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 1 1.5 12.5 20 60 32 930 340 120 VDD = 15V, ID = 1A, VGS = 10V, R GE N =60 ohm VDS=15V, ID=27.5A,VGS=10V VDS=15V, ID=27.5A,VGS=4.5V VDS =15V, ID = 27.5A, VGS =10V 2 3 14 23 A S PF PF PF DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =15V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd 17 23 37 20 26.1 5.4 4.6 16 250 90 200 35 ns ns ns ns nC nC nC nC 13.7 16.5 S DP /B 55N03L E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =26A Min Typ Max Unit 0.9 1.3 V 4 DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 50 25 -55 C V G S =10,9,8,7,6,5,4V ID, Drain C urrent(A) 40 ID, Drain C urrent (A) T J =125 C 20 30 15 10 25 C 5 0 20 V G S =3V 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 1 2 3 4 5 6 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 2400 2.2 F igure 2. Trans fer C haracteris tics V G S =10V ID=27A R DS (ON), Normalized Drain-S ource On-R es is tance C , C apacitance (pF ) 2000 1600 1200 C is s 800 400 0 0 5 10 15 20 C os s C rs s 25 30 1.8 1.4 1.0 0.6 0.2 0 -50 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S DP /B 55N03L 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=250uA B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 50 F igure 6. B reakdown V oltage V ariation with T emperature 50 gFS , T rans conductance (S ) Is , S ource-drain current (A) 40 30 20 10 V DS =10V 0 0 10 20 30 40 10 1 0.1 0.4 0.6 0.8 1.0 1.2 1.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 10 V G S , G ate to S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 300 200 8 6 4 2 0 0 ID, Drain C urrent (A) VDS =15V ID=27.5A 100 R ( DS ) ON L im it 10 ms 10 0m DC s 10 1m 0 gs s 10 1 0.5 0.1 V G S =10V S ingle P ulse T c=25 C 1 10 30 60 4 8 12 16 20 24 28 32 Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge 4 F igure 10. Maximum S afe O perating Area S DP /B 55N03L V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ingle P uls e 0.01 0.01 1. 2. 3. 4. 1 10 100 P DM t1 t2 R cJ C (t)=r (t) * R cJ C R cJ C =S ee Datas heet T J M-T C = P * R cJ C (t) Duty C ycle, D=t1/t2 1000 10000 0.1 S quare Wave P uls e Duration (ms ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 |
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