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| AP4418GH/J Pb Free Plating Product Advanced Power Electronics Corp. Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 35V 20m 33A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP4418GJ) is available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 35 20 33 21 100 34.7 0.28 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.6 110 Units /W /W Data & specifications subject to change without notice 200511051-1/4 AP4418GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 35 1 - Typ. 0.03 23 10 3 6 8 56 16 3 840 145 100 1.3 Max. Units 20 40 3 1 25 100 16 1340 2.1 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=16A VGS=4.5V, ID=12A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=16A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=20V ID=16A VDS=30V VGS=4.5V VDS=15V ID=16A RG=3.3,VGS=10V RD=0.94 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=16A, VGS=0V IS=16A, VGS=0V, dI/dt=100A/s Min. - Typ. 22 11 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP4418GH/J 100 90 T C =25 C 80 o 10V 7.0V T C = 150 C 7.0V o 10V ID , Drain Current (A) ID , Drain Current (A) 60 60 40 5.0V 4.5V 5.0V 30 4.5V V G =3.0V 20 V G =3.0V 0 0 2 4 6 8 0 0 2 4 6 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 1.8 I D = 12 A T C =25 C 50 o I D = 16 A V G =10V Normalized RDS(ON) 1.4 RDS(ON) (m) 30 1.0 10 0.6 2 4 6 8 10 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 20 15 Normalized VGS(th) (V) 1.4 IS (A) 10 T j =150 o C T j =25 o C 1 5 0.6 0 0.2 0 0.4 0.8 1.2 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP4418GH/J f=1.0MHz 16 1000 I D = 16 A VGS , Gate to Source Voltage (V) 12 C iss 8 C (pF) V DS = 20 V V DS = 25 V V DS = 30 V C oss 100 C rss 4 0 0 10 20 30 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000.0 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100.0 0.2 100us ID (A) 10.0 0.1 0.1 0.05 1.0 T c =25 C Single Pulse o 1ms 10ms 100ms DC PDM 0.02 t T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.1 0.1 1 10 100 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 80 V DS =5V ID , Drain Current (A) 60 VG QG 4.5V QGS QGD T j =25 o C 40 T j =150 o C 20 Charge 0 0 2 4 6 8 10 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 |
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