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HIP3TM Variable Attenuator 0.80-1.00 GHz
AV101-12 Features
I +50 dBm IP3 Typical I Low Loss 1 dB Typical I Attenuation 30 dB Typical I Good VSWR <1.5:1 Typical I Small SOIC-8 Package
SOI C-8 SOI C-8
Description
The AV101-12 is a current controlled variable attenuator from Alpha's series of HIP3TM components. It is designed to meet the wide dynamic range required in spread spectrum wireless base station applications. A monolithic quadrature hybrid is teamed with a silicon PIN diode pair in a plastic surface mount package reducing size and assuring consistency from part to part.
Electrical Specifications at 25C
Parameter Frequency Insertion Loss (0 mA Control Current) Attenuation @ 3.0 mA Control Current (900 MHz) VSWR All Ports Input 3rd Order Intercept Group Delay +47 18.5 1.5 +50 0.9 1.2 Min. 0.80 1 Typ. Max. 1.00 1.5 21.5 1.8 dBm ns Unit GHz dB dB
Operating Characteristics at 25C (0, +5 V)
Parameter1 Switching Characteristics2 Condition Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru (Peak) +15 Frequency Min. Typ. Max. 5 8 5 Unit s s mV dBm
Maximum Input Power for <1 dB Attenuation Variation
1. All measurements made in a 50 system, unless otherwise specified. 2. 0-4 mA square wave total control current.
Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com
Specifications subject to change without notice. 6/01A
1
HIP3TM Variable Attenuator 0.80-1.00 GHz
AV101-12
Typical Performance Data
1.5 Input 1.4 1.3 1.2 Output 1.1 1.0 0.0000 0.0 -10.0 800 MHz
Attenuation (dB)
VSWR (:1)
-20.0 -30.0 -40.0 -50.0 -60.0 900 MHz 1000 MHz
0.0010
0.0020
0.0030
0.0040
0.0050
-70.0 0.0000
0.0010
0.0020
0.0030
0.0040
0.0050
Current (Amps)
Current (Amps)
Input/Output VSWR vs. Current @ 800 MHz
1.5 1.4 0.0 -5.0
Attenuation vs. Current
0.0 mA 0.2 mA 0.9 mA 1.9 mA
Attenuation (dB)
VSWR (:1)
1.3 1.2 1.1 Output 1.0 0.0000 0.0010 0.0020 0.0030 0.0040 0.0050
-10.0 -15.0
Input
2.8 mA -20.0 -25.0 0.80 3.5 mA 0.85 0.90 0.95 1.00
Current (Amps)
Frequency (GHz)
Input/Output VSWR vs. Current @ 900 MHz
1.5 1.4 10
Attenuation vs. Frequency
Diode Current (mA)
0.0030 0.0040 0.0050
VSWR (:1)
1.3 1.2
Output
1
Input 1.1 1.0 0.0000
0.1
0.0010
0.0020
0.01 400
600
800
1000
Current (Amps)
Diode Voltage (mV)
Input/Output VSWR vs. Current @ 1000 MHz
2
Typical PIN Diode Current vs. Voltage
Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com
Specifications subject to change without notice. 6/01A
HIP3TM Variable Attenuator 0.80-1.00 GHz
AV101-12
Pin Out
680
Connection Diagram
RF OUT 220 pF 220 pF 100 nH CONTROL CURRENT GND RF IN CONTROL CURRENT CONTROL CURRENT
100 nH CONTROL CURRENT GND
1 2 3 4
0.1630 0.0190 TYP.
8 7 6
GND
GND
RF In
RF Out
5
SOIC-8
PIN 8 0.050 (1.27 mm) BSC
Absolute Maximum Ratings
Characteristic RF Input Power Control Current Operating Temperature Storage Temperature Maximum Reverse Diode Voltage Electrostatic Discharge Value 0.5 W CW, 4 W @ 12.5% Duty Cycle 50 mA per Diode -40 to +85C -40 to +85C -10 V +125 V
0.197 (5.00 mm) 0.189 (4.80 mm) 0.010 (0.25 mm) 0.004 (0.10 mm) 0.158 (4.00 mm) 0.150 (3.80 mm) 0.010 (0.25 mm) 0.007 (0.17 mm) 0.068 (1.73 mm) MAX. PIN 1 INDICATOR 0.244 (6.20 mm) 0.228 (5.80 mm)
PIN 1
0.020 (0.51 mm) MAX. 0.049 (1.24 mm) 0.016 (0.41 mm) 0.016 MAX. (0.41 mm) x 45 CHAMFER
Note: Operating this device above any of these parameters may cause irreversible damage.
8 MAX.
Recommended Board Layout
0.0200 DIA. VIA 4 PLACES
0.0555 TYP. Material is 10 mil FR4.
Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com
Specifications subject to change without notice. 6/01A
3

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