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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE SOT - 32 3 BAS19W/20W/21W FEATURES SWITCHING DIODE 1.BASE 2.EMITTER 3.COLLECTOR Power dissipation PD : 200 m W Tamb=25ae(c) Collector current IF : 200 m A Collector-base voltage VR : 19W:120 V; 20W:150V ; 21W:200V Operating and storage junction temperature range T J T stg: -55aeto +150ae Unit : mm Marking :BAS19W BAS20W BAS21W KA8 KT2 KT3 ELECTRICAL CHARACTERISTICS Tamb=25ae unless otherwise specified(c) Parameter BAS19W Symbol Test conditions MIN 100 MAX UNIT Reverse breakdown voltage BAS20W BAS21W BAS19W V(BR) R IR= 100A 150 200 V 100V IR VR=150V 200V VF CD trr IF=100mA IF=200mA VR=0V f=1MHz 1000 1250 5 50 mV 0.1 A Reverse voltage leakage current BAS20W BAS21W Forward Diode voltage capacitance pF nS Reveres recovery time IF=IR=30mA Irr=0.1A IR SOT-323 PACKAGE OUTLINE DIMENSIONS D e1 e |E E1 L L1 b c 0.02 A1 Symbol A A1 A2 b c D E E1 e e1 L L1 |E Dimensions In Millimeters Min 0.900 0.000 0.900 0.200 0.080 2.000 1.150 2.150 0.650TYP 1.200 0.525REF 0.260 0 0.460 8 1.400 Max 1.100 0.100 1.000 0.400 0.150 2.200 1.350 2.450 Min A2 A Dimensions In Inches Max 0.043 0.004 0.039 0.016 0.006 0.087 0.053 0.096 0.026TYP 0.047 0.021REF 0.010 0 0.018 8 0.055 0.035 0.000 0.035 0.008 0.003 0.079 0.045 0.085 E |
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