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| SIEGET(R) 25 NPN Silicon RF Transistor * For low current applications * For oscillators up to 12 GHz * Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz * Transition frequency f T = 25 GHz * Gold metalization for high reliability * SIEGET (R) 25 - Line Siemens Grounded Emitter Transistor 25 GHz f T - Line BFP 405 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP 405 Marking Ordering Code ALs Q62702-F1592 Pin Configuration 1=B 2=E 3=C 4=E Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, T S 120 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) Symbol Value 4.5 15 1.5 12 1 55 150 -65 ...+150 -65 ...+150 530 Unit V VCEO VCBO VEBO IC IB Ptot Tj TA T stg RthJS mA mW C K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BFP 405 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage I C = 1 mA, I B = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, I C = 0 DC current gain I C = 5 mA, V CE = 4 V typ. 5 90 max. 6.5 150 15 150 V nA A - Unit V(BR)CEO I CBO I EBO hFE 4.5 50 AC characteristics Transition frequency IC = 10 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector-emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 2 mA, VCE = 2 V, ZS = ZSopt , f = 900 MHz Power gain 1) IC = 5 mA, VCE = 2 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz Insertion power gain IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50 Third order intersept point IC = 5 mA, VCE = 2 V, ZS=ZSopt , ZL =ZLopt , f = 1.8 GHz 1dB Compression point IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS=ZSopt , ZL=ZLopt fT Ccb Cce Ceb F 20 - 25 0.05 0.28 0.29 1.15 0.08 1.4 GHz pF dB Gms - 22 - |S21|2 14 17 - dB IP3 - 15 - dBm P-1dB - 5 - 1) Gms = |S21 / S12| Semiconductor Group Semiconductor Group 22 Sep-09-1998 1998-11-01 BFP 405 Common Emitter S-Parameters f GHz MAG S11 ANG MAG S21 ANG MAG S12 ANG MAG S22 ANG VCE = 2V, IC = 5mA 0.1 0.5 1 2 3 4 6 8 9 10 11 12 0.841 0.791 0.682 0.449 0.304 0.239 0.303 0.464 0.549 0.631 0.666 0.693 -5.2 -25.4 -48.7 -88.6 -126.1 -171.1 129.3 91.4 77.9 71 67.6 63.4 13.52 12.76 11.25 8.04 5.91 4.63 3.13 2.22 1.93 1.65 1.47 1.23 174.9 154.6 133.3 100.3 77.4 58.9 28 -1.5 -15.5 -27.5 -38.2 -49.5 0.0033 0.0161 0.0290 0.0479 0.0639 0.799 0.1104 0.118 0.129 0.136 0.145 0.155 88.9 77.5 67.9 55.4 49.2 43.2 30.2 13.6 5.1 -2.2 -8.5 -15.3 0.986 0.956 0.873 0.709 0.594 0.509 0.386 0.251 0.153 0.069 0.127 0.187 -2.5 -12.6 -22.7 -36.8 -44.7 -55.5 -73.5 -92.2 106.6 -166.6 137.2 75.6 Common Emitter Noise Parameters f GHz Fmin 1) dB Ga 1) dB opt MAG ANG RN rn - F50 2) dB |S21|2 2) dB V CE = 2V, IC = 2mA 0.9 1.8 2.4 3.0 4 5 6 0.9 1.15 1.35 1.46 1.62 1.75 2.15 21.2 18.2 15.5 14.5 11.9 9.3 8.1 0.54 0.46 0.41 0.34 0.26 0.17 0.13 14 27 38 55 80 117 180 21 19 18 17 12.5 11 14 0.42 0.38 0.36 0.34 0.25 0.22 0.28 1.8 1.8 1.8 1.8 1.8 1.9 2.2 16.1 15 14 12.9 11.3 9.7 8.2 1) Input matched for minimum noise figure, output for maximum gain 2) Z S = ZL = 50 For more and detailed S- and Noise-parameters please contact your local Siemens distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 33 Sep-09-1998 1998-11-01 BFP 405 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.21024 39.251 1.7763 34.368 1.3152 1.3491 3.7265 4.5899 1.3364 0.99532 1.4935 0 3 fA V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 83.23 0.16493 10.526 0.25052 15 1.9289 0.70367 0.3641 0 0.48652 0 0 0.99469 A A V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.0405 15.761 0.96647 0.037223 0.21215 0.12691 0.37747 0.19762 96.941 0.08161 0.75 1.11 300 fA fA mA V fF V eV K C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) : IS = 2 fA N= 1.02 - RS = 20 All parameters are ready to use, no scalling is necessary Package Equivalent Circuit: C CB L BI = L BO = L CI C'-E'Diode 0.47 0.53 0.23 0.05 0.56 0.58 136 6.9 134 nH nH nH nH nH nH fF fF fF L BO B L BI B' Transistor Chip E' C' L CO C L EI = L EO = L CI = L CO = C BE = C CB = C CE = EHA07389 C BE L EI C CE L EO E Valid up to 6GHz The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitentechnik (IMST) (c) 1996 SIEMENS AG For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 44 Sep-09-1998 1998-11-01 BFP 405 For non-linear simulation: * Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. * If you need simulation of thereverse characteristics, add the diode with the C'-E'- diode data between collector and emitter. * Simulation of package is not necessary for frequenties < 100MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note: * This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. C B E E EHA07307 Transistor Schematic Diagram The common emitter configuration shows the following advantages: * Higher gain because of lower emitter inductance. * Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. The AC characteristics are verified by random sampling. Semiconductor Group Semiconductor Group 55 Sep-09-1998 1998-11-01 BFP 405 Total power dissipation P tot = f (T A*, TS) * Package mounted on epoxy Transition frequency fT = f (IC) f = 2 GHz VCE = parameter in V 100 mW 30 GHz 1.5 to 4 80 70 24 22 20 1 0.75 P tot 60 50 40 30 20 10 fT TS 18 16 14 12 10 0.5 TA 8 6 4 2 0 0 20 40 60 80 100 120 C 150 0 0 2 4 6 8 10 mA 14 TA,TS IC Permissible Pulse Load R thJS = f (tp) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 1 RthJS Pmax / PDC K/W - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 2 -7 10 -6 -5 -4 -3 -2 0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 10 10 10 10 s 10 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 66 Sep-09-1998 1998-11-01 BFP 405 Power gain G ma, G ms, |S 21|2 = f (f) VCE = 2V, I C = 5mA 40 dB Power gain Gma, Gms = f (I C) VCE = 2V f = parameter in GHz 32 dB 0.9 32 24 28 1.8 2.4 Gms G 24 20 16 12 G 20 3 4 5 16 |S21 |2 G ma 12 6 8 8 4 0 0.0 4 1.0 2.0 3.0 4.0 GHz 6.0 0 0 2 4 6 8 10 mA 14 f IC Power gain G ma, G ms = f (V CE) I C = 5mA Collector-base capacitance Ccb = f (VCB) VBE = 0, f = 1MHz 0.35 0.9 pF f = parameter in V 30 GHz 24 22 20 1.8 2.4 3 4 5 0.25 18 16 14 12 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V Ccb G 0.20 6 0.15 0.10 0.05 4.5 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V 4.0 VCE VCB Semiconductor Group Semiconductor Group 77 Sep-09-1998 1998-11-01 BFP 405 Noise figure F = f (IC) Noise figure F = f (IC) VCE = 2 V, ZS = Z Sopt 4.0 dB VCE = 2 V, f = 1.8 GHz 4.0 dB 3.0 3.0 F 2.0 F f = 6 GHz f = 5 GHz f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz 2 4 6 8 mA 2.5 2.5 2.0 1.5 1.5 1.0 1.0 ZS = 50 Ohm ZS = ZSopt 0.5 0.5 0.0 0 12 0.0 0 2 4 6 8 mA 12 IC IC Noise figure F = f ( f ) Source impedance for min. Noise Figure versus Frequency VCE = 2 V, ZS = Z Sopt 3.0 VCE = 2V, I C = 2mA / 5 mA +j50 dB +j25 +j100 +j10 2.0 4GHz 5GHz 0.9GHz 6GHz 3GHz 1.8GHz F 1.5 0 10 25 50 100 1.0 IC = 5 mA IC = 2 mA -j10 2mA 5mA 0.5 -j25 -j50 -j100 0.0 0.0 1.0 2.0 3.0 4.0 GHz 6.0 f Semiconductor Group Semiconductor Group 88 Sep-09-1998 1998-11-01 |
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