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PD-2.444
HFA105NH60
HEXFRED
Features
* Reduced RFI and EMI * Reduced Snubbing * Extensive Characterization of Recovery Parameters
TM
Ultrafast, Soft Recovery Diode
LUG TERMINAL ANODE
VR = 600V VF = 1.5V
a
d
Qrr * = 1200nC di(rec)M/dt * = 240A/s * 125C
BASE CATHODE
Description
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
TM
HALF-PAK Absolute Maximum Ratings
Parameter
VR IF @ TC = 25C IF @ TC = 100C IFSM IAS EAS PD @ TC = 25C PD @ TC = 100C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current Maximum Single Pulse Avalanche Current Non-Repetitive Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range
Max.
600 171 85 600 2.0 220 463 185 -55 to +150
Units
V
A J W C
Thermal - Mechanical Characteristics
Parameter
RJC RCS Wt Junction-to-Case, Single Case-to-Sink, Flat , Greased Surface Weight Mounting Torque Terminal Torque Limited by junction temperature L = 100H, duty cycle limited by max TJ
Min.
---- ---- ---- 15 (1.7) 20 (2.2)
Typ.
---- 0.15 26 (0.9) ---- ----
Max.
0.27 ---- ---- 25 (2.8) 40 (4.4)
Units
C/W K/W g (oz) lbf*in (N*m)
Note:
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HFA105NH60
Electrical Characteristics @ T = 25C (unless otherwise specified) J
Parameter
VBR VFM Cathode Anode Breakdown Voltage Max Forward Voltage
Min. Typ. Max. Units
600 --- --- 1.3 1.5 1.2 6.0 1.5 200 6.0 --- 1.5 1.7 1.4 30 6.0 300 --- V V A mA pF nH
Test Conditions
IR = 100A IF = 105A IF = 210A IF = 105A, TJ = 125C VR = VR Rated TJ = 125C, VR = 480V VR = 200V From top of terminal hole to mounting plane
IRM CT LS
Max Reverse Leakage Current Junction Capacitance Series Inductance --- ---
Dynamic Recovery Characteristics @ T = 25C (unless otherwise specified) J
Parameter
trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M/dt1 di(rec)M/dt2 Reverse Recovery Time
Min. Typ. Max. Units
--- 35 --- --- 90 140 ns --- 160 240 --- 10 18 A --- 15 30 --- 450 1300 nC --- 1200 3600 --- 310 --- A/s --- 240 ---
Test Conditions
IF = 1.0A, dif/dt = 200A/s, VR = 30V TJ = 25C TJ = 125C IF = 105A TJ = 25C TJ = 125C VR = 200V TJ = 25C TJ = 125C dif/dt = 200A/s TJ = 25C TJ = 125C
Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb
1/4-20 UNC-2B
30.40 (1.197) 29.90 (1.177)
19.69 (0.775) 18.42 (0.725) 4.11 (0.162) 3.86 (0.152) 12.83 (0.505) DIA. 12.57 (0.495)
4.11 (0.162) DIA. 3.86 (0.152) 19.18 (0.755) SQ. 18.92 (0.745) 1
LEAD ASSIGNMENTS 1 - ANODE 2 - CATHODE
14.10 (0.555) 13.59 (0.535)
15.75 (0.620) 14.99 (0.590)
Dimensions in millimeters and inches
39.62 (1.560) 38.61 (1.520) 3.30 (0.130) 3.05 (0.120)
HALF- PAK
2
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HFA105NH60
1000 10000
Reverse Current - I R (A)
T = 150C J
1000
T = 125C J
100
Instantaneous Forward Current - I F (A)
10
100
TJ = 150C TJ = 125C TJ = 25C
1
TJ = 25C
0.1 0 200 400 600
Reverse Voltage - VR (V)
Junction Capacitance - C T (pF)
10
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
10000
A
T = 25C J
1000
1 0.0
1.0
2.0
3.0
4.0
Forward Voltage Drop - V FM (V)
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
100 1 10 100 1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
Thermal Impedance - Z thJC (K/W)
0.1
D = 0.50 D = 0.33 D = 0.25 D = 0.17
D = 0.08
PD M
t
1 t2
0.01
Single Pulse (Thermal Resistance)
N otes: 1. Duty factor D = t / t 12 2. Peak TJ = P D M x Z thJC + T C
0.01 0.1 1 10 100
0.001 0.00001
0.0001
0.001
t 1 , Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z Characteristics thjc
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HFA105NH60
240 100
VR = 200V TJ = 125C TJ = 25C
200
VR = 200V TJ = 125C TJ = 25C IF = 200A IF = 105A
t rr - (ns)
160
I IRRM - (A)
I F = 40A
10
IF = 200A
120
I F = 105A I F = 40A
80
40 100
di f /dt - (A/s)
1000
1 100
di f /dt - (A/s)
1000
Fig. 5 - Typical Reverse Recovery vs. di f/dt
Fig. 6 - Typical Recovery Current vs. di f/dt
4000
10000
VR = 200V TJ = 125C TJ = 25C
3000
VR = 200V TJ = 125C TJ = 25C
Q RR - (nC)
IF = 200A IF = 105A IF = 40A
di(rec)M/dt - (A/s)
2000
1000
I F = 200A IF = 105A I F = 40A
1000
0 100
di f /dt - (A/s)
1000
100 100
1000
di f /dt - (A/s)
Fig. 7 - Typical Stored Charge vs. di/dt f
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
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HFA105NH60
3
IF
trr ta tb
4
REVERSE RECOVERY CIRCUIT
VR = 200V
0 Q rr
2
I RRM
0.5 I RRM di(rec)M/dt
5
0.01 L = 70H D.U.T. D G IRFP250 S
1
0.75 I RRM di f /dt
dif/dt ADJUST
4. Qrr - Area under curve defined by rtr and IRRM trr X IRRM Qrr = 2. IRRM - Peak reverse recovery current 2 3. trr - Reverse recovery time measured from zero crossing point of negative 5. di(rec)M/dt - Peak rate of change of current during t portion of trr going IF to point where a line passing b through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 1. dif/dt - Rate of change of current through zero crossing
Fig. 9 - Reverse Recovery Parameter Test Circuit
L = 100H HIGH-SPEED SWITCH Rg = 25 ohm CURRENT MONITOR FREE-WHEEL DIODE + Vd = 50V
Fig. 10 - Reverse Recovery Waveform and Definitions
I L(PK)
DUT
DECAY TIME V (AVAL) V R(RATED)
Fig. 11 - Avalanche Test Circuit and Waveforms
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