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| PD - 95723 IRF7380PBF HEXFET(R) Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS 80V RDS(on) max 73m:@VGS = 10V ID 3.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 100C IDM PD @TA = 25C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 80 20 3.6h 2.9 29 2.0 0.02 2.3 -55 to + 150 Units V c A W W/C V/ns C Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and e Storage Temperature Range Thermal Resistance Parameter RJL RJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount) * Typ. --- --- Max. 20 50 Units C/W Notes through are on page 8 www.irf.com 1 08/10/04 IRF7380PBF Static @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 80 --- --- 2.0 --- --- --- --- --- 0.09 61 --- --- --- --- --- --- --- 73 4.0 20 250 200 -200 nA V Conditions VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 2.2A f V A VDS = VGS, ID = 250A VDS = 80V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) Parameter gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units 4.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- 15 2.9 4.5 9.0 10 41 17 660 110 15 710 72 140 --- 23 --- --- --- --- --- --- --- --- --- --- --- --- pF ns nC S ID = 2.2A VDS = 40V VGS = 10V VDD = 40V ID = 2.2A RG = 24 VGS = 10V VGS = 0V VDS = 25V Conditions VDS = 25V, ID = 2.2A f f = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 64V, = 1.0MHz VGS = 0V, VDS = 0V to 64V g Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energydh Avalanche CurrentA Typ. --- --- Max. 75 2.2 Units mJ A Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ah Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- --- --- --- --- 50 110 3.6 29 1.3 --- --- A A V ns nC Conditions MOSFET symbol showing the integral reverse G S D p-n junction diode. TJ = 25C, IS = 2.2A, VGS = 0V TJ = 25C, IF = 2.2A, VDD = 40V di/dt = 100A/s f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF7380PBF 100 TOP VGS 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V 3.7V 100 TOP VGS 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V 3.7V ID, Drain-to-Source Current (A) 10 ID, Drain-to-Source Current (A) 10 BOTTOM 1 BOTTOM 0.1 3.7V 1 3.7V 0.01 20s PULSE WIDTH Tj = 25C 0.001 0.1 1 10 100 1000 0.1 0.1 1 20s PULSE WIDTH Tj = 150C 10 100 1000 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 I D = 3.6A RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current () 2.0 10 T J = 150C 1.5 T J = 25C 1 1.0 VDS = 15V 20s PULSE WIDTH 0 3.0 4.0 5.0 6.0 7.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ, Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7380PBF 100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C SHORTED gs ds Crss = C gd Coss = Cds + Cgd 12 ID= 2.1A VGS , Gate-to-Source Voltage (V) 10000 10 VDS= 64V VDS= 40V VDS= 16V C, Capacitance(pF) 8 6 1000 Ciss C oss Crss 100 4 10 2 1 1 10 100 0 0 2 4 6 8 10 12 14 16 VDS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) Reverse Drain Current (A) ID, Drain-to-Source Current (A) 10 10 100sec T J= 25 C TJ = 150 C 1 1 1msec Tc = 25C Tj = 150C Single Pulse 10msec ISD SD , V GS = 0 V 0.1 0.0 0.5 1.0 1.5 2.0 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7380PBF 4.0 VDS VGS 3.0 RD RG 10V Pulse Width 1 s Duty Factor 0.1 % D.U.T. + ID , Drain Current (A) -V DD 2.0 1.0 Fig 10a. Switching Time Test Circuit VDS 90% 0.0 25 50 75 100 125 150 TA , Ambient Temperature (C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10b. Switching Time Waveforms 100 (Z thJA ) D = 0.50 0.20 10 0.10 Thermal Response 0.05 0.02 1 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +T A 10 100 J = P DM x Z thJA 0.1 0.00001 0.0001 0.001 0.01 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7380PBF 95 90 85 80 VGS = 10V 75 70 65 60 55 50 0 5 10 15 20 25 30 ID , Drain Current (A) RDS(on) , Drain-to -Source On Resistance (m ) RDS (on) , Drain-to-Source On Resistance (m) 800 700 600 500 400 300 ID = 3.6A 200 100 0 3.0 5.0 7.0 9.0 11.0 13.0 15.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50K 12V .2F .3F VGS QGS D.U.T. + V - DS QG QGD 200 VG VGS 3mA EAS, Single Pulse Avalanche Energy (mJ) TOP 160 Charge IG ID BOTTOM ID 1.0A 1.8A 2.2A Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 120 80 15V V(BR)DSS tp VDS L 40 DRIVER RG 20V D.U.T IAS + V - DD 0 A 25 50 75 100 125 150 I AS tp 0.01 Starting TJ, Junction Temperature (C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7380PBF SO-8 Package Outline Dimensions are shown in millimeters (inches) D A 5 B DIM A b INCHE S MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 8 6 E 1 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45 8X L 7 8X c NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] F OOTPRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 www.irf.com 7 IRF7380PBF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 31mH R G = 25, I AS = 2.2A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. ISD 2.2A, di/dt 220A/s, VDD V(BR)DSS,TJ 150C. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/04 8 www.irf.com |
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