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| SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. KMB4D0N30SA N-Ch Trench MOSFET L E B L FEATURES A H 2 G 1 3 VDSS=30V, ID=4A Drain-Source ON Resistance RDS(ON)=47m (Max.) @ VGS=10V RDS(ON)=65m (Max.) @ VGS=4.5V Super Hige Dense Cell Design P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 C N K M SOT-23 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage ) SYMBOL VDSS VGSS N-Ch 30 20 4.0 ID 3.5 IDP IS PD 0.8 Tj Tstg RthJA 150 -55 150 130 /W 20 1.04 1.25 W A A UNIT V V DC@TA=25 Drain Current DC@TA=70 Pulsed Drain-Source-Diode Forward Current Drain Power Dissipation TA=25 TA=70 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note : Surface Mounted on FR4 Board, t 10sec. PIN CONNECTION (TOP VIEW) KND D 3 3 2 1 2 1 G S 2007. 4. 17 Revision No : 0 J D 1/5 KMB4D0N30SA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance On-State Drain Current Forward Transconductance Dynamic (Note 3) Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delat Time Turn-On Rise Time Turn-On Deley Time Turn-On Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage NOTE 1> * : Pulse Test : Pulse width <300 VSDF* VGS=0V, IDR=1.25A 0.8 1.2 V Ciss Coss Crss Qg* Qgs* Qgd* td(on)* tr* td(off)* tr* VDD=15V, VGS=10V ID=1A, RG=6 (NOTE 1) ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL BVDSS IDSS IDS=250 A, VGS=0V, VGS=0V, VDS=30V VGS=0V, VDS=30V, Tj=55 30 1.0 6 - 38 52 7 0.5 V A 10 100 3.0 47 m 65 A S nA V IGSS Vth RDS(ON)* VGS= 20V, VDS=0V VDS=VGS, ID=250 A VGS=10V, ID=3.5A VGS=4.5V, ID=2.8A ID(ON)* gfs* VGS=5V, VDS=4.5V VDS=5V, ID=2.5A VDS=15V, f=1MHz, VGS=0V VDS=15V, VGS=10V, ID=2.5A - 305 65 29 6 1.6 1.0 7 12 14 6 9 11 18 ns 25 10 nC pF , Duty cycle < 2% 2007. 4. 17 Revision No : 0 2/5 KMB4D0N30SA Fig1. VDS - ID Drain Source On Resistance RDS(ON) () 10V,3V,2.8V 2.8V Fig2. RDS(ON) - ID 200 Common Source Tc=25 C Pulse Test Drain Current ID (A) 2.6V 2.4V 100 VGS=4.5V VGS=10V 2.2V VGS=2.0V 0 0 4 8 12 16 20 Drain - Source Voltage VDS (V) Drain - Current ID (A) Fig3. VGS - ID 20 Common Source 60 Fig4. RDS(ON) - Tj Common Source VGS=10V, ID=3.5A Pulse Test Drain Current ID (A) 16 12 8 VDS=5V Pulse Test Normalized Drain-Source On-Resistance RDS(ON) (m) 50 40 30 20 10 0 25 C 4 125 C -55 C 0 0 1 2 3 4 5 -75 -50 -25 0 25 50 75 100 125 150 Gate Source Volatage VGS (V) Junction Temperature Tj ( C) Fig5. Vth - Tj Gate Threshold Voltage Vth (V) 5 Common Source 10 8 6 4 2 0 0 0.4 Fig6. IS - VSDF 3 2 1 0 -75 -50 -25 0 25 50 75 100 125 150 Drain Current ID (A) VGS=VDS ID=250A 4 Pulse Test 0.8 1.2 1.6 2.0 Junction Temperature Tj ( C) Source - Drain Forward Voltage VSDF (V) 2007. 4. 17 Revision No : 0 3/5 KMB4D0N30SA Fig7. Transient Thermal Response Curve NORMALIZED TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PDM t1 t2 - Duty = t/T 0.01 10-3 10-2 10-1 1 10 100 600 TIME t (sec) Fig8. Safe Operation Area 10 RDS(ON)LIMIT Drain Current ID (A) 1 100 ms DC,100s 0.1 VGS= 10V SINGLE PULSE TA= 25 C 0.01 0.1 1 10 100 Drain - Source Voltage VDS (V) 2007. 4. 17 Revision No : 0 4/5 KMB4D0N30SA Fig9. Gate Charge Circuit and Wave Form VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA VDS VGS Q Qgs Qgd Qg Fig10. Resistive Load Switching RL VDS 90% 0.5 VDSS 6 VDS 10 V VGS 10% td(on) td(off) VGS tr ton tf toff 2007. 4. 17 Revision No : 0 5/5 |
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