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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
Preferred Devices
Dual Bias Resistor Transistors
PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBA114EDXV6T1 series, two BRT devices are housed in the SOT-563 package which is ideal for low-power surface mount applications where board space is at a premium.
Features
(3) R1 Q1 Q2 R2 (4) R1 (5) (6)
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(2) R2 (1)
* * * *
Simplifies Circuit Design Reduces Board Space Reduces Component Count These are Pb-Free Devices
1
SOT-563 CASE 463A PLASTIC STYLE 1
MARKING DIAGRAM
MAXIMUM RATINGS
(TA = 25C unless otherwise noted, common for Q1 and Q2) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value -50 -50 -100 Unit Vdc Vdc mAdc
xx M G G
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation @ TA = 25C Derate above 25C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Characteristic (Both Junctions Heated) Total Device Dissipation @ TA = 25C Derate above 25C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Junction and Storage Temperature Range Symbol PD RqJA Max 357 2.9 350 Unit mW mW/C C/W
xx = Device Code (Refer to page 2) M = Date Code G = Pb-Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device NSBA1xxxDXV6T1 Package Shipping
SOT-563* 4000/Tape & Reel
NSBA1xxxDXV6T1G SOT-563* 4000/Tape & Reel Symbol PD RqJA TJ, Tstg Max 500 4.0 250 -55 to +150 Unit mW mW/C C/W C NSBA1xxxDXV6T5 SOT-563* 8000/Tape & Reel
NSBA1xxxDXV6T5G SOT-563* 8000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **This package is inherently Pb-Free.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ Minimum Pad
DEVICE MARKING INFORMATION
See specific marking information in the device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2006
1
April, 2006 - Rev. 6
Publication Order Number: NSBA114EDXV6/D
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
DEVICE MARKING AND RESISTOR VALUES
Device* NSBA114EDXV6T1 / T5 NSBA124EDXV6T1 / T5 NSBA144EDXV6T1 / T5 NSBA114YDXV6T1 / T5 NSBA114TDXV6T1 / T5 NSBA143TDXV6T1 / T5 NSBA113EDXV6T1 / T5 NSBA123EDXV6T1 / T5 NSBA143EDXV6T1 / T5 NSBA143ZDXV6T1 / T5 NSBA124XDXV6T1 / T5 NSBA123JDXV6T1 / T5 NSBA115EDXV6T1 / T5 NSBA144WDXV6T1 (Note 2) (Note 2) (Note 2) (Note 2) (Note 2) (Note 2) (Note 2) (Note 2) (Note 2) (Note 2) Package SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 Marking 0A 0B 0C 0D 0E 0F 0G 0H 0J 0K 0L 0M 0N 0P R1 (kW) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 R2 (kW) 10 22 47 47 1.0 2.2 4.7 47 47 47 100 22
*The "G'' suffix indicates Pb-Free package available. Refer to Ordering Information Table on page 1. 2. New resistor combinations. Updated curves to follow in subsequent data sheets.
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2)
Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = -50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = -50 V, IB = 0) Emitter-Base Cutoff Current (VEB = -6.0 V, IC = 0) NSBA114EDXV6T1 NSBA124EDXV6T1 NSBA144EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA113EDXV6T1 NSBA123EDXV6T1 NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA115EDXV6T1 NSBA144WDXV6T1 ICBO ICEO IEBO - - - - - - - - - - - - - - - - -50 -50 - - - - - - - - - - - - - - - - - - -100 -500 -0.5 -0.2 -0.1 -0.2 -0.9 -1.9 -4.3 -2.3 -1.5 -0.18 -0.13 -0.2 -0.05 -0.13 - - nAdc nAdc mAdc Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage (IC = -10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = -2.0 mA, IB = 0) ON CHARACTERISTICS (Note 3) Collector-Emitter Saturation Voltage (IC = -10 mA, IE = -0.3 mA) (IC = -10 mA, IB = -5 mA) NSBA113EDXV6T1/NSBA123EDXV6T1 (IC = -10 mA, IB = -1 mA) NSBA114TDXV6T1/NSBA143TDXV6T1 NSBA143EDXV6T1/NSBA143ZDXV6T1/NSBA124XDXV6T1 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
V(BR)CBO V(BR)CEO
Vdc Vdc
VCE(sat)
-
-
-0.25
Vdc
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) (continued)
Characteristic ON CHARACTERISTICS (Note 3) (continued) DC Current Gain (VCE = -10 V, IC = -5.0 mA) NSBA114EDXV6T1 NSBA124EDXV6T1 NSBA144EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA113EDXV6T1 NSBA123EDXV6T1 NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA115EDXV6T1 NSBA144WDXV6T1 NSBA114EDXV6T1 NSBA124EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA113EDXV6T1 NSBA123EDXV6T1 NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA144EDXV6T1 NSBA115EDXV6T1 NSBA144WDXV6T1 VOH hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 - - - - - - - - - - - - - - -4.9 60 100 140 140 250 250 5.0 15 27 140 130 140 130 140 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Vdc -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 - Vdc Symbol Min Typ Max Unit
Output Voltage (on) (VCC = -5.0 V, VB = -2.5 V, RL = 1.0 kW)
VOL
(VCC = -5.0 V, VB = -3.5 V, RL = 1.0 kW) (VCC = -5.0 V, VB = -5.5 V, RL = 1.0 kW) (VCC = -5.0 V, VB = -4.0 V, RL = 1.0 kW)
Output Voltage (off) (VCC = -5.0 V, VB = -0.5 V, RL = 1.0 kW) (VCC = -5.0 V, VB = -0.05 V, RL = 1.0 kW) NSBA113EDXV6T1 (VCC = -5.0 V, VB = - 0.25 V, RL = 1.0 kW) NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA123EDXV6T1 NSBA143ZDXV6T1 Input Resistor NSBA114EDXV6T1 NSBA124EDXV6T1 NSBA144EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA113EDXV6T1 NSBA123EDXV6T1 NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA115EDXV6T1 NSBA144WDXV6T1
R1
7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 0.8 0.17 - 0.8 0.055 0.38 0.038 1.7
10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 1.0 0.21 - 1.0 0.1 0.47 0.047 2.1
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 1.2 0.25 - 1.2 0.185 0.56 0.056 2.6
kW
Resistor Ratio
NSBA114EDXV6T1/NSBA124EDXV6T1/ NSBA144EDXV6T1/NSBA115EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1/NSBA143TDXV6T1 NSBA113EDXV6T1/NSBA123EDXV6T1/NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA144WDXV6T1
R1/R2
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
ALL NSBA114EDXV6T1 SERIES DEVICES
300 PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 -50 RqJA = 490C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) 150
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS -- NSBA114EDXV6T1
1 IC/IB = 10
TA = -25C 0.1 75C 25C
0.01
0
20 40 IC, COLLECTOR CURRENT (mA)
50
Figure 1. Derating Curve - ALL DEVICES
Figure 2. VCE(sat) versus IC
TYPICAL ELECTRICAL CHARACTERISTICS -- NSBA114EDXV6T1
1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V 4 f = 1 MHz lE = 0 V TA = 25C
TA = 75C 100 25C -25C
C ob , CAPACITANCE (pF)
3
2
1
10
1
10 IC, COLLECTOR CURRENT (mA)
100
0
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100
75C
25C V in , INPUT VOLTAGE (VOLTS) TA = -25C
100
VO = 0.2 V
IC, COLLECTOR CURRENT (mA)
10 1
10
TA = -25C 25C 75C
0.1
1
0.01 0 1 2
VO = 5 V 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10
0.001
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 5. Output Current versus Input Voltage
Figure 6. Input Voltage versus Output Current
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS -- NSBA124EDXV6T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS 10 IC/IB = 10 1000
hFE , DC CURRENT GAIN (NORMALIZED)
VCE = 10 V
1 TA = -25C
25C
TA = 75C 100
25C
-25C
75C 0.1
0.01
0
20 IC, COLLECTOR CURRENT (mA)
40
50
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C
100 75C 10
25C TA = -25C
C ob , CAPACITANCE (pF)
3
2
1
0.1
1
0.01 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8
VO = 5 V 9 10
0
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100 V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V TA = -25C
10 75C
25C
1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS -- NSBA144EDXV6T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) TA = 75C 25C 100 -25C
TA = -25C 0.1 75C
25C
0.01
0
10 20 30 IC, COLLECTOR CURRENT (mA)
40
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1 0.8 C ob , CAPACITANCE (pF) 0.6 0.4 0.2 0 f = 1 MHz lE = 0 V TA = 25C
100 10 1 0.1 0.01 VO = 5 V 0 1 2
TA = 75C
25C -25C
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
IC, COLLECTOR CURRENT (mA)
0.001
3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS)
8
9
10
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C
1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 16. Input Voltage versus Output Current
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS -- NSBA114YDXV6T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) TA = -25C 25C 75C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 VCE = 10 V 25C -25C
TA = 75C
0.1
0.01
0.001
0
20 40 60 IC, COLLECTOR CURRENT (mA)
80
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25C
100 TA = 75C IC, COLLECTOR CURRENT (mA) 25C
-25C 10
VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 25C TA = -25C
75C 1
0.1
0
10
20 30 40 IC, COLLECTOR CURRENT (mA)
50
Figure 21. Input Voltage versus Output Current http://onsemi.com
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS -- NSBA114TDXV6T1
1000 HFE, DC CURRENT GAIN (NORMALIZED) TA = 25C
VCE = 10 V VCE = 5.0 V
100
1.0
10 IC, COLLECTOR CURRENT (mA)
100
Figure 22. DC Current Gain
TYPICAL ELECTRICAL CHARACTERISTICS -- NSBA143TDXV6T1
1000 HFE, DC CURRENT GAIN (NORMALIZED) TA = 25C
VCE = 10 V
VCE = 5.0 V 100 1.0 10 IC, COLLECTOR CURRENT (mA) 100
Figure 23. DC Current Gain
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS -- NSBA115EDXV6T1
1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) 1000 75C TA = -25C 25C
100
0.1 -25C 25C 75C
10
IC/IB = 10 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7
VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) 100
0.01
Figure 24. Maximum Collector Voltage versus Collector Current
Figure 25. DC Current Gain
1.2 IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) 1.0 0.8 0.6 0.4 0.2 0 f = 1 MHz IE = 0 V TA = 25C
100 25C 10 TA = -25C 75C
1
VO = 5 V 0.1 0 1 2 3 4 5 6 7 8 9 10
0
10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS)
60
Vin, INPUT VOLTAGE (VOLTS)
Figure 26. Output Capacitance
Figure 27. Output Current versus Input Voltage
100 Vin, INPUT VOLTAGE (VOLTS)
25C 10
TA = -25C
1
75C 0 2
VO = 0.2 V 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 20
Figure 28. Input Voltage versus Output Current
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS -- NSBA144WDXV6T1
1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) 1000
75C TA = -25C 25C
TA = -25C 75C 0.1
100
25C IC/IB = 10 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50
VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) 100
0.01
Figure 29. Maximum Collector Voltage versus Collector Current
Figure 30. DC Current Gain
1.4 Cob, CAPACITANCE (pF) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C
100 75C 10 25C TA = -25C
1
0.1
0.01
VO = 5 V
0.001
0
1
2
3
4
5
6
7
8
9
10
11
Vin, INPUT VOLTAGE (VOLTS)
Figure 31. Output Capacitance
Figure 32. Output Current versus Input Voltage
100 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V
10
TA = -25C 75C
1
25C 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25
Figure 33. Input Voltage versus Output Current
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
PACKAGE DIMENSIONS
SOT-563, 6 LEAD CASE 463A-01 ISSUE F
D -X-
A L
4
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043
6
5
1
2
3
E -Y-
HE
b e
5 6 PL M
C XY
0.08 (0.003)
DIM A b C D E e L HE
STYLE 1: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1
SOLDERING FOOTPRINT*
0.3 0.0118 0.45 0.0177 1.0 0.0394
1.35 0.0531
0.5 0.5 0.0197 0.0197
SCALE 20:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NSBA114EDXV6/D

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