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APTM10HM09FT3G
Full - Bridge MOSFET Power Module
13 14 Q1 Q3
VDSS = 100V RDSon = 9m typ @ Tj = 25C ID = 139A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Power MOS V(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a phase leg of twice the current capability * RoHS compliant
18 22 19 Q2 23 8 Q4 7
11
10
26
4 3 29 15 30 31 R1 32 16
27
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VDSS
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTM10HM09FT 3G- Rev 1
Max ratings Unit 100 V Tc = 25C 139 ID Continuous Drain Current A Tc = 80C 100 * IDM Pulsed Drain current 430 VGS Gate - Source Voltage 30 V RDSon Drain - Source ON Resistance 10 m PD Maximum Power Dissipation Tc = 25C 390 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 mJ EAS Single Pulse Avalanche Energy 3000 * Specification of MOSFET device but output current must be limited to 75A to not exceed a delta of temperature greater than 30C for the connectors.
Parameter Drain - Source Breakdown Voltage
July, 2006
APTM10HM09FT3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V
Min Tj = 25C Tj = 125C
Typ
VGS = 10V, ID = 69.5A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
9 2
Max 100 500 10 4 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 50V ID =139A Inductive switching @ 125C VGS = 15V VBus = 66V ID = 139A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 66V ID = 139A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 66V ID = 139A, R G = 5
Min
Typ 9875 3940 1470 350 60 180 35 70 95 125 552 604 608 641
Max
Unit pF
nC
ns
J
J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25C Tc = 80C VGS = 0V, IS = - 139A Tj = 25C Tj = 125C Tj = 25C Tj = 125C 0.4 1.7
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2-6
APTM10HM09FT 3G- Rev 1
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 139A di/dt 700A/s VR VDSS Tj 150C
July, 2006
IS = - 139A VR = 66V diS/dt = 100A/s
Max 139 100 1.3 8 190 370
Unit A V V/ns ns C
APTM10HM09FT3G
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 2.5
Typ
Max 0.32 150 125 100 4.7 110
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
Typ 50 3952
Max
Unit k K
RT =
R 25 T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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3-6
APTM10HM09FT 3G- Rev 1
July, 2006
17
28
APTM10HM09FT3G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 Single Pulse 0.9 0.7 0.5
0.05 0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 120 ID, Drain Current (A)
VGS=15V, 10V & 9V
600 ID, Drain Current (A) 500 400 300 200 100 0
Transfert Characteristics
V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
100 80 60 40 20 0
8V 7V 6V
T J=25C T J=125C T J=-55C
0
4
8
12
16
20
24
28
0
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A)
Normalized to V GS=10V @ 69.5A
1 2 3 4 5 6 VGS , Gate to Source Voltage (V)
7
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 140 120 100 80 60 40 20 0 25 50 75 100 125 150
July, 2006 4-6 APTM10HM09FT 3G- Rev 1
1.1
V GS=10V
1 0.9 0.8 0 50 100 150 200 ID, Drain Current (A)
VGS=20V
TC, Case Temperature (C)
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APTM10HM09FT3G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 1000
limited by RDSon
VGS=10V ID= 69.5A
100s
100
1ms
10
Single pulse TJ=150C TC=25C
10ms
1 1 10 100 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 100 200 300 400 500 Gate Charge (nC)
July, 2006
VDS=50V V DS =80V ID=139A T J=25C VDS=20V
10000
Ciss Coss Crss
1000
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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5-6
APTM10HM09FT 3G- Rev 1
APTM10HM09FT3G
Delay Times vs Current 120 100 t d(on) and td(off) (ns) 80 60 40 20 0 0 50 100 150 200 I D, Drain Current (A) Switching Energy vs Current 1.5 Switching Energy (mJ)
VDS=66V RG=5 TJ=125C L=100H VDS=66V RG=5 T J=125C L=100H
Rise and Fall times vs Current 160 140 t r and tf (ns) 120 100 80 60 40 20 0 250 0 50 100 150 200 ID, Drain Current (A) 250
V DS=66V R G=5 T J=125C L=100H
t d(off)
tf
tr
td(on)
Switching Energy vs Gate Resistance 2.5
VDS=66V ID=139A T J=125C L=100H
Eon and Eoff (mJ)
Eoff
2 1.5 1 0.5 0
Eoff
1
Eon 0.5 Eon
Eon
0 0 50 100 150 200 250 I D, Drain Current (A) Operating Frequency vs Drain Current
VDS=66V D=50% RG=5 T J=125C T C=75C ZVS Hard switching ZCS
0
10
20
30
40
50
60
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000
300 250 Frequency (kHz) 200 150 100 50 0 25 50 75 100 125 150 I D, Drain Current (A)
100
TJ=150C
TJ=25C
10
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V)
July, 2006
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM10HM09FT 3G- Rev 1

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