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| BAL99 Silicon Switching Diode For high-speed switching applications 3 Total power dissipation, TS = 54 C Junction temperature Storage temperature Thermal Resistance 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Junction - soldering point1) 2 1 3 VPS05161 2 EHA00002 Type BAL99 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Marking JFs Pin Configuration 1 = n.c. 2=C 3=A Package SOT23 Symbol VR VRM IF IFS Ptot Tj Tstg Value 70 70 250 4.5 370 150 -65 ... 150 Unit V mA A mW C Surge forward current, t = 1 s RthJS 260 K/W Jul-27-2001 BAL99 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage I(BR) = 100 A Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA Reverse current VR = 70 V Reverse current VR = 25 V, TA = 150 C VR = 70 V AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time t rr , 6 CD 1.5 Unit max. V mV typ. - V(BR) VF - IR IR - - 715 855 1000 1250 2.5 A - 30 50 pF ns Test circuit for reverse recovery time D.U.T. F Oscillograph 2 Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50 I F = 10 mA, IR = 10 mA, R L = 100 measured at IR = 1mA EHN00014 Oscillograph: R = 50, tr = 0.35ns, C 1pF Jul-27-2001 BAL99 Forward current IF = f (TS ) Reverse current IR = f (TA) 300 10 5 nA BAL 99 EHB00007 mA R 10 4 VR = 70 V max. 200 5 IF 150 10 3 5 70V 25V 100 10 2 50 typ. 5 0 0 15 30 45 60 75 90 105 120 C 150 10 1 0 50 100 TA C 150 TS Forward current IF = f (VF ) TA = 25C 150 BAL 99 EHB00008 Peak forward current IFM = f (t p) TA = 25C 10 2 BAL 99 EHB00009 F mA FM A 10 1 D = 0.005 0.01 0.02 0.05 0.1 0.2 100 typ max 10 0 50 10 -1 tp D= T tp T 0 0 0.5 1.0 V VF 1.5 10-2 10-6 10-5 10-4 10-3 10-2 10-1 s 100 t 3 Jul-27-2001 BAL99 Forward voltage VF = f (TA) 1.0 V BAL 99 EHB00010 VF F = 100 mA 10 mA 1 mA 0.1 mA 0.5 0 0 50 100 TA C 150 4 Jul-27-2001 |
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