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| BUZ20 Semiconductor Data Sheet October 1998 File Number 2254.1 12A, 100V, 0.200 Ohm, N-Channel Power MOSFET Features * 12A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power * rDS(ON) = 0.200 (BUZ20 field effect transistor designed for applications such as * SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, /Subject relay drivers and drivers for high power bipolar switching * Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. 12A, * Linear Transfer Characteristics This type can be operated directly from integrated circuits. 00V, * High Input Impedance .200 Formerly developmental type TA17411. * Majority Carrier Device hm, N* Related Literature hannel Ordering Information - TB334 "Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND ower Components to PC Boards" BUZ20 TO-220AB BUZ20 OSNOTE: When ordering, use the entire part number. ET) Symbol /Author D ) /KeyG ords Harris S emionducor, Nhannel Packaging ower JEDEC TO-220AB OSSOURCE ET, DRAIN OGATE 20AB) DRAIN (FLANGE) /Creator ) /DOCIN O pdfark /Pageode /Useutlines /DOCIEW 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright (c) Harris Corporation 1998 BUZ20S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ20 100 100 12 48 20 75 0.6 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W W/oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current (TC = 30oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 1mA (Figure 9) TJ = 25oC, VDS = 100V, VGS = 0V TJ = 125oC, VDS = 100V, VGS = 0V MIN 100 2.1 2.7 VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) TYP 3 20 100 10 0.15 4.0 30 50 110 60 1500 300 80 1.67 75 MAX 4 250 1000 100 0.200 45 75 140 80 2000 500 140 UNITS V V A A nA S ns ns ns ns pF pF pF oC/W oC/W Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient IGSS rDS(ON) gfs td(ON) tr td(OFF) tf CISS COSS CRSS RJC RJA VDS = 0V, VGS = 20V ID = 6A, VGS = 10V (Figure 8) VDS = 25V, ID = 6A (Figure 11) VCC = 30V, ID 2.9A, VGS = 10V, RGS = 50, RL = 10, (Figures 14, 15) Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulsed Source to Drain Current Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge NOTES: 2. Pulse Test: Pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). SYMBOL ISD ISDM VSD trr QRR TC = 25oC TC = 25oC TJ = 25oC, ISD = 24, VGS = 0V TJ = 25oC, ISD = 12A, dISD/dt = 100A/s, VR = 30V TEST CONDITIONS MIN TYP 1.4 200 1.6 MAX 12 48 1.8 UNITS A A V ns C 2 BUZ20 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 ID, DRAIN CURRENT (A) Unless Otherwise Specified 15 VGS 10V 10 0.6 0.4 5 0.2 0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150 0 0 50 100 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZJC, TRANSIENT THERMAL IMPEDANCE 1 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 0.01 10-5 10-4 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 102 5s 10s ID, DRAIN CURRENT (A) 101 100s ID, DRAIN CURRENT (A) 30 PD = 75W VGS = 20V PULSE DURATION = 80s TJ = 25oC VGS = 10V 20 VGS = 8.0V VGS = 7.5V 10 VGS = 7.0V VGS = 6.5V VGS = 6.0V VGS = 5.5V VGS = 5.0V VGS = 4.5V VGS = 4.0V 0 2 4 6 VDS, DRAIN TO SOURCE VOLTAGE (V) 8 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 10ms 100ms DC TJ = MAX RATED TC = 25oC 101 102 VDS, DRAIN TO SOURCE VOLTAGE (V) 103 100 10-1 100 0 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 3 BUZ20 Typical Performance Curves IDS(ON), DRAIN TO SOURCE CURRENT (A) 15 PULSE DURATION = 80s VDS = 25V Unless Otherwise Specified (Continued) 0.8 rDS(ON), ON-STATE RESISTANCE () PULSE DURATION = 80s 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 10 20 ID, DRAIN CURRENT (A) VGS = 5V 5.5V 6V 6.5V 7V 7.5V 8V 9V 10V 20V 10 TJ = 25oC 5 0 0 5 VGS, GATE TO SOURCE VOLTAGE (V) 10 30 FIGURE 6. TRANSFER CHARACTERISTICS FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT VGS(TH), GATE THRESHOLD VOLTAGE (V) 0.4 PULSE DURATION = 80s ID = 6A VGS = 10V 4 VDS = VGS, ID = 1mA rDS(ON), DRAIN TO SOURCE ON-RESISTANCE () 0.3 3 0.2 2 0.1 1 0 -50 0 50 100 150 0 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 101 6 VGS = 0, f = 1MHz gfs, TRANSCONDUCTANCE (S) 5 4 3 2 1 0 PULSE DURATION = 80s VDS = 25V, TJ = 25oC C, CAPACITANCE (nF) 100 CISS COSS 10-1 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 0 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) CRSS 10-2 40 0 5 10 ID, DRAIN CURRENT (A) 15 FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT 4 BUZ20 Typical Performance Curves 102 ISD , SOURCE TO DRAIN CURRENT (A) PULSE DURATION = 80s Unless Otherwise Specified (Continued) 15 VGS, GATE TO SOURCE VOLTAGE (V) ID = 18A 101 TJ = 150oC TJ = 25oC 100 10 VDS = 20V VDS = 80V 5 10-1 0 0 0.5 1.0 1.5 2.0 2.5 VSD, SOURCE TO DRAIN VOLTAGE (V) 3.0 0 10 20 30 Qg(TOT) , TOTAL GATE CHARGE (nC) 40 FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 14. SWITCHING TIME TEST CIRCUIT VDS (ISOLATED SUPPLY) FIGURE 15. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS 12V BATTERY 0.2F 50k 0.3F G DUT 0 Ig(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR Ig(REF) 0 FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORMS 5 |
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