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 HAT1048R
Silicon P Channel Power MOS FET Power Switching
ADE-208-1223A (Z) 2nd. Edition Jan. 2001 Features
* * * * Capable of -4.5 V gate drive Low drive current High density mounting Low on-resistance R DS(on) = 6.0 m typ (at VGS = -10V)
Outline
SOP-8
8 5 76
56 7 8 DD D D
3 12
4
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
SSS 123
HAT1048R
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Ambient Thermal Impedance Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch
Note2 Note2 Note1
Ratings -30 20 -16 -128 -16 2.5 50 150 - 55 to + 150
Unit V V A A A W C/W C C
ch-a Tch Tstg
1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
HAT1048R
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Symbol V(BR)DSS Min -30 20 -- -- -1.0 -- -- (18) -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- (6.0) (9.5) (30) (5700) (1250) (710) (105) (14) (20) (25) (45) (140) (55) (-0.85) (50) Max -- -- 10 -1 -2.5 (7.0) (13.5) -- -- -- -- -- -- -- -- -- -- -- (-1.10) -- Unit V V A A V m m S pF pF pF nc nc nc ns ns ns ns V ns Test Conditions I D = -10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, V DS = 0 VDS = -30 V, VGS = 0 VDS = -10 V, I D = -1 mA I D = -8 A, VGS = -10 V Note3 I D = -8 A, VGS = -4.5V Note3 I D = -8 A, VDS = -10 V Note3 VDS = -10 V VGS = 0 f = 1 MHz VDD = -10 V VGS = -10 V I D = -16 A VGS = -10 V, ID = -8 A VDD 10 V RL = 1.25 Rg = 4.7 IF = -16 A, VGS = 0 Note3 IF = -16 A, VGS = 0 diF/ dt = 50 A/ s
Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf
Body-drain diode forward voltage VDF Body-drain diode reverse recovery time Note: 3. Pulse test t rr
HAT1048R
Package Dimensions As of January, 2001
Unit: mm
4.90 5.3 Max 5 8 3.95 1 4 *0.22 0.03 0.20 0.03 1.75 Max
0.75 Max
6.10 - 0.30
+ 0.10
1.08 0 - 8
0.14 - 0.04
+ 0.11
1.27 *0.42 0.08 0.40 0.06
+ 0.67 0.60 - 0.20
0.15 0.25 M
*Dimension including the plating thickness Base material dimension Hitachi Code JEDEC EIAJ Mass (reference value) FP-8DA Conforms -- 0.085 g
HAT1048R
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica Europe Asia Japan
: : : :
http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk
For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0


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