View RB717F_1160549.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

RB717F
Diodes
Schottky barrier diode
RB717F
Applications Low current rectification External dimensions (Unit : mm) Land size figure (Unit : mm)
1.3
2.00.2
1.250.1
2.10.1
Features 1) Small mold type. (UMD3) 2) Low VF 3) High reliability.
(2) 0.65
0.30.1 0.150.05
0.65 0.9MIN.
(3)
0.8MIN
00.1 0.1Min
(1) 0.65 0.70.1 0.90.1
UMD3
1.30.1
Structure
Construction Silicon epitaxial planar
ROHM : UMD3 JEDEC : SOT-323 JEITA : SC-70 dot (year week factory)
Taping specifications (Unit : mm)
4.00.1 2.00.05 1.550.05 0.30.1 1.750.1
3.50.05
8.00.2
2.40.1
5.50.2
2.250.1 0
4.00.1
0.50.05
00.1
2.40.1 1.250.1
Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reevrse voltage (DC) Average rectifoed forward current*1 Forward current surge peak 60Hz1cyc*1 Junction temperature Storage temperature
Symbol VRM VR Io IFSM Tj Tstg
Limits 40 40 30 200 125 -40 to +125
Unit V V mA mA
(*1) Rating of per diode
Electrical characteristics (Ta=25C) Parameter Symbol Forward voltage VF Reverse current IR
Min. -
Typ. 2.0
Max. 0.37 1 -
Unit V A pF
Conditions IF=1mA VR=10V VR=1V,f=1MHz
Capacitance between terminals
Ct
Rev.B
1.6
Each lead has same dimension
1/3
RB717F
Diodes
Electrical characteristic curves (Ta=25C)
100
1000 Ta=125 Ta=125
10 f=1MHz
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
10
Ta=75 Ta=-25
10 1 0.1
Ta=75
1
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
40
100
Ta=25 Ta=-25
1
Ta=25
0.1
0.01 0.001
0.01
0 100 200 300 400 500 600 700 800 900 1000
0.1 0 10 20 30 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 35
FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
300
500
10
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
290
REVERSE CURRENT:IR(nA)
Ta=25 IF=1mA n=30pcs
450 400 350 300 250 200 150 100 50 0
Ta=25 VR=30V n=30pcs
9 8 7 6 5 4 3 2 1 0 AVE:1.97pF
Ta=25 f=1MHz VR=1V n=10pcs
280
270
AVE:78.0nA
260
AVE:269.9mV
250
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
15
15
10 9
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm 10
1cyc 8.3ms
8 7 6 5 4 3 2 1 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Ifsm t
10
5 AVE:7.30A 0
5
Ifsm 8.3ms 8.3ms 1cyc
0 1 IFSM DISRESION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
1000
0.04
0.003 D=1/2
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
Rth(j-a)
FORWARD POWER DISSIPATION:Pf(W)
REVERSE POWER DISSIPATION:PR (W)
100
Rth(j-c)
Mounted on epoxy board
10
IM=1mA IF=10mA
Sin(180) 0.02 DC
0.002
Sin(180) D=1/2
0.001
DC
1ms
time
300us
1 0.001
0.00
0.01 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000
0 0.00 0.01 0.02 0.03 0.04 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 0.05 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
Rev.B
2/3
RB717F
Diodes
0.1 0.09 0A 0V Io
0.10 0.09 0A 0V Io t T VR D=t/T VR=20V Tj=125
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0 Sin(180) D=1/2 DC
t T
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.08
VR D=t/T VR=20V Tj=125
0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 D=1/2 DC
Sin(180)
25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta)
125
0
25
50
75
100
125
CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

▲Up To Search▲

Price & Availability of RB717F

	To Download RB717F Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .