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| S T M8501 S amHop Microelectronics C orp. J an.10 2006 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 55V P R ODUC T S UMMAR Y (P -C hannel) V DS S -55V ID 5A R DS (ON) ( m W ) Max ID - 3.5A R DS (ON) ( m W ) 80 Max 50 @ V G S = 10V 70 @ V G S = 4.5V D1 8 @ V G S = -10V 100 @ V G S = -4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a S ymbol Vspike VDS VGS 25 C 70 C ID IDM IS PD TJ, TS TG d N-C hannel P-C hannel 60 55 20 5 4.2 22 1.7 2 1.44 -55 to 150 -60 -55 20 - 3.5 - 2.8 - 18 -1.7 Unit V V V A A A A W C Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Ta= 25 C Ta=70 C Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 62.5 C /W S T M8501 N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS Rg c Condition VGS = 0V, ID = 250uA VDS = 44V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 4.5A VGS =4.5V, ID= 4A VDS = 5V, VGS = 10V VDS = 5V, ID = 4.5A Min Typ C Max Unit 55 1 V uA 100 nA 1.0 1.7 34 45 15 15 930 85 50 3.9 17 14 29 5 20 9.5 2.9 4.5 3.0 50 70 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance VDS =25V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ VDD = 30V ID = 1 A VGS = 10V R GE N = 6 ohm VDS =30V, ID =4.5A,VGS =10V VDS =30V, ID =4.5A,VGS =4.5V Gate-S ource Charge Gate-Drain Charge Qgs Qgd VDS =30V, ID = 4.5 A VGS =10V 2 ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) tf Qg ns ns ns ns nC nC nC nC S T M8501 P-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS Rg c Condition VGS = 0V, ID = -250uA VDS = -44V, VGS= 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250uA VGS =-10V, ID = -3A VGS =-4.5V, ID= -2A VDS = -5V, VGS = -10V VDS = -5V, ID= -3A Min Typ C Max Unit -55 -1 V uA 100 nA -1.0 - 1.7 60 80 10 8.5 900 85 58 4.2 13 16 84 24 18.5 9.1 1.8 4.5 - 3.0 80 V m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 100 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance VDS =-30V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ VDD = -30V R L = 30 ohm VGS = -10V R GE N = 6 ohm VDS =-30V, ID =-3A,VGS =-10V VDS =-30V, ID =-3A,VGS =-4.5V Gate-S ource Charge Gate-Drain Charge Qgs Qgd VDS =-30V, ID = -3 A VGS =-10V 3 ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) tf Qg ns ns ns ns nC nC nC nC S T M8501 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is =1.7A VGS = 0V, Is =-1.7A N-Ch P-Ch Min Typ Max Unit 0.8 -0.78 1.2 -1.2 C DRAIN-SOURCE DIODE CHARACTERISTICS b V Notes a.Surface Mounted on FR4 Board, tO10sec. b.Pulse Test:Pulse WidthO300gs, Duty Cycle O 2%. c.Guaranteed by design, not subject to production testing. d.Guaranteed when external R g=6 ohm and tf < tf max. N-Channel 25 VGS=10V 20 VGS=4.5V 15 20 5 ID, Drain Current(A) 15 VGS=3.5V 10 ID, Drain Current (A) 10 5 Tj=125 C 1 0 25 C -55 C 5 VGS=3V 0 0 0.5 1 1.5 2 2.5 3 0 0.8 1.6 2.4 3.2 4.0 4.8 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 60 50 V G S =4.5V 2.0 R DS (ON), On-R es is tance Normalized 1.8 1.6 1.4 1.2 1.0 0 R DS (on) (m W) 40 30 20 10 0 V G S =4.5V ID=4A V G S =10V V G S =10V ID=4.5A 0 5 10 15 20 25 0 25 50 75 100 125 150 T j( C ) ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 4 S T M8501 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 V DS =V G S ID=250uA B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 ID=250uA 6 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 120 100 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 ID=25A Is , S ource-drain current (A) 125 C 75 C R DS (on) (m W) 10.0 80 60 40 20 0 2 8 25 C 125 C 25 C 75 C 0 4 6 10 1.0 0.2 0.4 0.6 0.8 1.0 1.2 V G S , G ate- S ource Voltage (V ) V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 5 S T M8501 V G S , G ate to S ource V oltage (V ) 1250 1000 C is s 10 8 6 4 2 0 0 3 6 9 12 15 18 21 24 VDS =30 V ID=4.5A C , C apacitance (pF ) 750 500 C os s 6 250 0 C rs s 0 5 10 15 20 25 30 V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 600 S witching T ime (ns ) 40 10 ID, Drain C urrent (A) T D (off) 100 60 10 Tf R DS (O N) L im it 10m 10 1s DC s T r T D(o n) 0m s 11 1 1 V DS =30V ,ID=1A V G S = 10 V 0.1 0.03 VGS =10V S ingle P ulse T A=25 C 0.1 1 10 50 60 6 10 60 100 300 600 R g, G ate R es is tance (W) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 9 F igure 12. Maximum S afe O perating Area Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 on P DM t1 1. 2. 3. 4. t2 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 10 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 6 S T M8501 P-C hannel 20 -V G S =6V 20 -V G S =4.5V 15 -V G S =3.5V 16 -ID, Drain C urrent (A) -ID, Drain C urrent (A) -V G S =10V 12 10 8 4 0 -VGS=3V 5 T j=125 C 1 25 C 0 0 0.8 1.6 2.4 3.2 4.0 4.8 -55 C -V G S =2.5V 0 0.5 1 1.5 2 2.5 3 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C har acter istics F igure 2. Tr ansfer C har acter istics 100 2.0 R DS (ON), On-R es is tance Normalized V G S =-4.5V R DS (on) (m W) 80 60 40 20 0 1.8 1.6 1.4 1.2 1.0 V G S =-10V ID=-3A V G S =-10V V G S =-4.5V ID=-2A 0 4 8 12 16 20 0 25 50 75 100 125 -ID, Drain C urrent (A) 150 T j( C ) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 7 S T M8501 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 V DS =V G S ID=-250uA B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=-250uA 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 220 180 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 ID =-20A -Is , S ource-drain current (A) 125 C 10.0 R DS (on) (m W) 160 120 80 25 C 40 0 75 C 125 C 25 C 75 C 1.0 0 2 4 6 8 10 0 0.3 0.6 0.9 1.2 1.5 -V G S , G ate- S ource Voltage (V ) -V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 8 S T M8501 1000 800 -V G S , G ate to S ource V oltage (V ) C i ss 10 8 6 4 2 0 0 3 6 9 12 15 18 21 24 Qg, T otal G ate C harge (nC ) VDS =-30 V ID=-3A C , C apacitance (pF ) 600 400 6 200 C rss 0 C os s 0 5 10 15 20 25 30 -V DS , Drain-to S ource Voltage (V ) F igure 9. C apacitance 600 -ID, Drain C urrent (A) S witching T ime (ns ) F igure 10. G ate C harge 50 10 R DS 100 60 10 T D (o ff) Tr T D(o n) (O N) L im it 1m 10 10 DC s Tf 11 ms 1s 0m s 1 1 V D S = -30V,I D=-1A V G S = -10 V 0.1 0.03 VGS =-10V S ingle P ulse T A=25 C 0.1 1 10 50 60 6 10 60 100 300 600 R g, G ate R es is tance (W) -V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 9 F igure 12. Maximum S afe O perating Area Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 on P DM t1 1. 2. 3. 4. t2 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 10 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 9 S T M8501 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45X A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0X MAX 1.75 0.25 4.98 3.99 6.20 1.27 8X MIN 0.053 0.004 0.189 0.150 0.228 0.016 0X INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8X 10 S T M8501 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:P PACKAGE SOP 8N 150O A0 6.40 B0 5.20 K0 2.10 D0 r1.5 (MIN) D1 r1.5 + 0.1 - 0.0 E 12.0 O0.3 E1 1.75 E2 5.5 O0.05 P0 8.0 P1 4.0 P2 2.0 O0.05 T 0.3 O0.05 SO-8 Reel UNIT:P TAPE SIZE 12 P REEL SIZE r330 M 330 O 1 N 62 O1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H r12.75 + 0.15 K S 2.0 O0.15 G R V 11 |
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