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| UTC 2N7000 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications MOSFET 1 FEATURES *High density cell design for low RDS(ON) *Voltage controlled small signal switch *Rugged and reliable *High saturation current capability 1: SOURCE 2: GATE TO-92 3: DRAIN ABSOLUTE MAXIMUM RATINGS ( Ta=25C ) PARAMETER Drain-Source Voltage Drain-Gate Voltage(RGS1M) Gate -Source Voltage-Continuous -Non Repetitive (tp<50s) Maximum Drain Current-Continuous -Pulsed Maximum Power Dissipation Derated above 25C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds TJ,TSTG TL PD ID SYMBOL VDSS VDGR VGSS RATINGS 60 60 20 40 115 800 400 3.2 -55 to +150 300 UNIT V V V mA mW mW/C C C THERMAL CHARACTERISTICS PARAMETER Thermal Resistance, Junction-to-Ambient SYMBOL RJA RATINGS 312.5 UNIT C/W UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-064,A UTC 2N7000 ELECTRICAL CHARACTERISTICS (T a =25C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage, Forward Gate-Body leakage Reverse ON CHARACTERISTICS (Note) Gate Threshold Voltage Static Drain-Source On-Resistance RDS(ON) VGS(th) VDS =VGS , ID=250A VGS =10V, ID=500mA TJ=100C VGS =5.0V, ID=50mA TJ=100C Drain-Source On-Voltage On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Ciss Coss Crss VDD=30V, RL=150, ID=200mA, VGS=10V, RGEN=25 VDD=30V, RL=150, ID=200mA, VGS=10V, RGEN=25 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Is ISM VSD VGS=0V, Is=115mA(Note ) 0.88 VDS=25V,VGS=0V, f=1.0MHz 20 11 4 VDS(ON) ID(ON) gFS VGS = 10V, ID=500mA VGS = 5.0V, ID=50mA VGS=10V, VDS2VDS(on) VDS2VDS(on), ID=200mA 500 80 1 2.1 1.2 1.7 1.7 2.4 0.6 0.09 2700 320 BVDSS IDSS IGSSF IGSSR VGS=0V,ID=10 A VDS=60V, VGS =0V TJ=125C VGS =20V, VDS=0V VGS =-20V, VDS=0V 60 MOSFET SYMBOL CONDITIONS. MIN TYP MAX UNITS V 1 0.5 100 -100 2.5 7.5 13.5 7.5 13.5 3.75 1.5 mA mS 50 25 5 20 pF pF pF ns V A mA nA nA V 20 ns 115 0.8 1.5 mA A V Note: Pulse Test: Pulse Width300s, Duty Cycle2.0% UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-064,A UTC 2N7000 Figure 1. On-Region Characteristics VGS=10V 9.0V 1.5 RDS(ON),NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 ID,DRAIN-SOURCE CURRENT (A) 8.0 7.0 6.0 1 5.0 0.5 4.0 3.0 0 1 2 3 4 5 3 2.5 2 6.0 MOSFET Figure 2. On-Resistance Varisation with Gate Voltage and Drain Current VGS= 4.0V 4.5 5.0 7.0 8.0 9.0 10 1.5 1 0.5 0 0.4 0.8 1.2 1.6 2 VDS,DRAIN-SOURCE VOLTAGE (V) ID,DRAIN CURRENT (A) Figure 3. On-Resistance Varisation with Temperature RDS(ON),NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS=10V ID=500mA RDS(ON),NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 1.75 1.5 1.25 1 0.75 0.5 -50 3 Figure 4. On-Resistance Varisation with Drain Current and Temperature VGS=10V 2.5 TJ=125C 2 1.5 25C 1 0.5 0 0 0.4 0.8 1.2 2 -55C -25 0 25 50 75 100 125 150 1.6 TJ,JUCTION TEMPERATURE (C) ID,DRAIN CURRENT (A) Figure 5.Transfer Characteristics VDS=10V Vth,NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 2 1.6 1.8 1.2 0.4 0 TJ= -55C 25C 125C 1.1 1.05 1 0.95 0.9 0.85 Figure 6. Gate Threshold Varisation with Temperature VDS=VGS ID=1mA ID,DRAIN CURRENT (A) 0 2 4 6 8 10 0.8 -50 -25 0 25 50 75 100 125 150 VGS,GATE TO SOURCE VOLTAGE (V) TJ,JUCTION TEMPERATURE (C) UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R201-064,A UTC 2N7000 Figure7. Breakdown Voltage Varisation with Temperature BVDSS,NORMALIZED DRAIN-SOURCE VREAKDOWN VOLTAGE IS,REVERSE DRAIN CURRENT(A) 1.1 1.075 1.05 1.025 1 0.975 0.95 0.925 -50 -25 0 25 50 75 100 125 150 ID=250A 2 1 0.5 TJ=125C 0.1 25C VGS=0V MOSFET Figure 8. Body Diode Forward Voltage Varisation with Temperature 0.01 0.005 0.001 0.2 -55C 0.4 0.6 0.8 1 1.2 1.2 TJ,JUCTION TEMPERATURE (C) VsD,BODY DIODE FORWARD VOLTAGE (V) Figure9.Capacitance Characteristics 60 40 CAPACITANCE(pF) Ciss 20 10 5 Crss Coss VGS, GATE-SOURCE VOLTAGE(V) 10 Figure10. Gate Charge Characteristics VDS=25V 8 6 ID=500mA 4 2 115mA 0 0 0.4 280mA 2 1 VGS=0V f=1MHz 1 2 3 5 10 20 30 50 0.8 1.2 1.6 2 VDS,DRAIN TO SOURCE VOLTAGE (V) Qg,GATE CHARGE(nC) Figure11 VDD ton Figure12. Switching Waveforms toff tr 90% td(off) 90% tf RL VIN D VGS RGEN G S DUT VOUT td(on) Output ,Vout 10% 10% Inverted 90% Input ,Vin 10% 50% 50% Pulse Width UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R201-064,A UTC 2N7000 Figure 13. Maximum Safe Operating Area 3 2 1 ID,DRAIN CURRENT(A) 0.5 RD imit N)L S(O MOSFET 100 1ms 10m s 100 m s us 0.1 0.05 VGS=10V SINGLE PULSE TA=25 2 5 10 0.01 0.005 1 1s 10s DC 20 30 60 80 VDS,DRAIN TO SOURCE VOLTAGE (V) Figure 14. Transient Thermal Response Curve 1 0.5 0.2 0.1 0.05 0.02 0.01 0.0001 0.001 0.01 RJA (t)= r (t) * RJA RJA= (see Datasheet) TJ * Ta=P* RJA (t) Duty Cycle, D= t1 / t2 0.1 1 P(pk) t1 t2 10 100 300 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R201-064,A |
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