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| AP40T03GH/J Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Low Gate Charge Fast Switching RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 25m 28A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40T03GJ) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=100 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 25 28 24 95 31.25 0.25 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4 110 Units /W /W Data and specifications subject to change without notice 200331052-1/4 AP40T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.032 Max. Units 25 45 3 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=18A VGS=4.5V, ID=14A 15 8.8 2.5 5.8 6 62 16 4.4 655 145 95 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=18A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= 25V ID=18A VDS=20V VGS=4.5V VDS=15V ID=18A RG=3.3,VGS=10V RD=0.83 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 28 95 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25, IS=28A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP40T03GH/J 90 75 T C =25 C ID , Drain Current (A) o 10V 8 .0V ID , Drain Current (A) T C =150 C o 10V 8 .0V 60 6 .0V 50 6 .0V 30 25 V G = 4. 0V V G =4.0V 0 0.0 1.0 2.0 3.0 4.0 0 0.0 1.0 2.0 3.0 4.0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 2.0 I D =14A T C =25 50 I D =18A V G =10V Normalized RDS(ON) 1.4 RDS(ON) (m) 30 0.8 10 0 5 10 15 0.2 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 100 2.0 10 T j =150 o C IS(A) T j =25 o C VGS(th) (V) 1.5 1 1.0 0.1 0 0.4 0.8 1.2 1.6 0.5 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C ) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP40T03GH/J f=1.0MHz 12 1000 I D =18A VGS , Gate to Source Voltage (V) 9 C iss V DS =10V V DS =15V V DS =20V C (pF) 6 100 C oss C rss 3 0 0 3 6 9 12 10 1 8 15 22 29 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor = 0.5 Normalized Thermal Response (Rthjc) 0.2 ID (A) 100us 10 0.1 0.1 0.05 0.02 0.01 Single Pulse PDM 1ms T C =25 C Single Pulse o t T Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 10ms 100ms DC 10 100 1 0.1 1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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