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TYPICAL PERFORMANCE CURVES
APT11GP60BDQB APT11GP60BDQB
600V
POWER MOS 7 IGBT
(R)
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
TO-247
G
* Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage
* SSOA rated
C
E
C G E
All Ratings: TC = 25C unless otherwise specified.
APT11GP60BDQB UNIT Volts
600 20 41 20 45 45A @ 600V 187 -55 to 150 300
Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current
1
Amps
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT
600 3 4.5 2.2 2.1 250
A nA
3-2005 050-7447 Rev A
6 2.7
Collector-Emitter On Voltage (VGE = 15V, I C = 11A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 11A, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C)
2 2
Volts
ICES I GES
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
2500 100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT11GP60BDQB
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 11A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V I C = 11A
4 5
MIN
TYP
MAX
UNIT pF V nC A
1210 110 6 7.5 40 8 13 45 7 9 29 50 46 85 90 7 9 65 85 46 185 215 J
ns ns
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
4 5
R G = 5 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 11A R G = 5 TJ = +125C
Turn-on Switching Energy (Diode)
6
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
0.67 2.7 5.90
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7447
Rev A
3-2005
TYPICAL PERFORMANCE CURVES
40 35
IC, COLLECTOR CURRENT (A)
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
40 35
IC, COLLECTOR CURRENT (A)
APT11GP60BDQB
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
30 25 20 TC=125C 15 10 5 0 0 1 2 3 4 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST <0.5 % DUTY CYCLE
30 25 20 15 10 5 0
TC=-55C TC=25C
TC=-55C TC=25C TC=125C
0 1 2 3 4 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC = 11A TJ = 25C
FIGURE 1, Output Characteristics(VGE = 15V) 80 70
IC, COLLECTOR CURRENT (A) VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 GATE CHARGE (nC) FIGURE 4, Gate Charge 35 40 VCE = 120V VCE = 300V VCE = 480V
60 50 40 30 20 10 0 0 TJ = -55C TJ = 25C TJ = 125C
2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3.0 2.5 IC = 22A
3.0 2.5 IC = 11A 2.0 1.5 1.0 0.5 IC = 5.5A IC = 22A
IC = 11A 2.0 1.5 1.0 0.5 0 IC = 5.5A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10
6
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 60
0 -50
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
50 40 30 20 10 0 -50
1.05
1.00
0.95
050-7447
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0.90 -50
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
Rev A
3-2005
10
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
70 60
VGE =15V,TJ=125C
APT11GP60BDQB
8 VGE= 15V 6
50 40 30 20 10 0 VCE = 400V RG = 5 L = 100 H
VGE =15V,TJ=25C
4 VCE = 400V TJ = 25C, TJ =125C RG = 5 L = 100 H 5
2
10 15 20 25 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 16 14 12
tr, RISE TIME (ns) tf, FALL TIME (ns)
RG = 5, L = 100H, VCE = 400V
0
5 10 15 20 25 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 120 100 80 60 40 20 0
RG = 5, L = 100H, VCE = 400V
10 8 6 4 2 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 500
VCE = 400V L = 100 H RG = 5
TJ = 125C, VGE = 5V
TJ = 25 or 125C,VGE = 15V
TJ = 25C, VGE = 15V
0
5 10 15 20 25 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 600
EOFF, TURN OFF ENERGY LOSS (J)
EON2, TURN ON ENERGY LOSS (J)
400
TJ =125C, VGE=15V
500 400 300 200 100
TJ = 125C, VGE = 15V
300
VCE = 400V L = 100 H RG = 5
200
100
TJ = 25C, VGE=15V
TJ = 25C, VGE = 15V
5 10 15 20 25 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 600
SWITCHING ENERGY LOSSES (J)
0
5 10 15 20 25 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 600
VCE = 400V VGE = +15V RG = 5
0
500 400 300 200 100 0
Eoff 22A Eon2 22A
VCE = 400V VGE = +15V TJ = 125C
SWITCHING ENERGY LOSSES (J)
500 400 300
Eoff 22A
Eon2 11A Eoff 11A Eon2 5.5A Eoff 5.5A 0
Eon2 22A 200 100 0
Eoff 11A Eon2 11A
3-2005
Rev A
Eon2 5.5A Eoff 5.5A 0
050-7447
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
2,000 1,000 500
C, CAPACITANCE ( F)
P
50 Cies 45 40
IC, COLLECTOR CURRENT (A)
APT11GP60BDQB
35 30 25 20 15 10 5 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area 0
100 50 Coes
10 5 Cres
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.70 0.60 0.50 0.40 0.5 0.30 0.20 0.10 0 0.3 0.9
1
ZJC, THERMAL IMPEDANCE (C/W)
0.7
Note:
PDM t1 t2
0.1 0.05 10-5 10-4
SINGLE PULSE
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
1000
FMAX, OPERATING FREQUENCY (kHz)
500
RC MODEL Junction temp (C) 0.376 Power (watts) 0.295 Case temperature(C) 0.0545F 0.00350F
100 50
TJ = 125C TC = 75C D = 50 % VCE = 200V RG = 5
Fmax = min(f max1 , f max 2 ) f max1 = f max 2 = Pdiss = 0.05 t d (on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
5 10 15 20 25 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10
0
TJ - TC R JC
050-7447
Rev A
3-2005
APT11GP60BDQB
APT15DF120 APT8DQ60
10% Gate Voltage TJ = 125C
V CC
IC
V CE
td(on) tr 90% Drain Current
A D.U.T.
5%
5% DrainVoltage
10%
Switching Energy
Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions
90% Gate Voltage
VTEST *DRIVER SAME TYPE AS D.U.T.
TJ = 125C
A
DrainVoltage td(off) 90%
V CE 100uH IC V CLAMP B
tf
Switching Energy
10%
0 Drain Current
A DRIVER* D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
050-7447
Rev A
3-2005
TYPICAL PERFORMANCE CURVES
APT11GP60BDQB
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 121C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 11A Forward Voltage IF = 22A IF = 11A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT11GP60BDQB UNIT Amps
8 14 110
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.20 2.90 1.90
T0-247 Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7447
Dimensions in Millimeters and (Inches)
Rev A
3-2005
1.01 (.040) 1.40 (.055)
Gate Collector (Cathode) Emitter (Anode)

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