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APTM20DHM16T
Asymmetrical - Bridge MOSFET Power Module
VBUS VBUS SENSE Q1 CR3
VDSS = 200V RDSon = 16mW max @ Tj = 25C ID = 104A @ Tc = 25C
Application * * * Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives
G1 S1 OUT1 OUT2 Q4
Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
CR2 G4 0/VBU S SENSE S4 0/VBU S NTC2
NT C1
* * * *
VBUS SENSE
G4 S4
OUT2
Benefits * * * * * Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile
VBUS
0/VBUS
OUT1
S1 G1
0/VBUS SENSE
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc= 25C Tc = 80C Max ratings 200 104 77 416 30 16 390 100 50 3000 Unit V A V mW W A mJ
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-6
APTM20DHM16T - Rev 2
May, 2004
APTM20DHM16T
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 250A
VGS = 0V,VDS= 200V VGS = 0V,VDS= 160V Tj = 25C Tj = 125C
Min 200
Typ
Max 100 500 16 5 100
Unit V A mW V nA
VGS = 10V, ID = 52A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 104A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 104A RG = 5W Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 104A, RG = 5 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 104A, RG = 5 Min Typ 7220 2330 146 140 53 67 32 64 88 116 849 929 936 986 J J ns Max Unit pF
nC
Diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions
50% duty cycle Tc = 90C
Min
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
IF = 100A IF = 200A IF = 100A IF = 100A VR = 133V di/dt = 200A/s IF = 100A VR = 133V di/dt = 200A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Typ 100 1 1.4 0.9 60 110 200 840
Max 1.1
Unit A V
ns nC
May, 2004 2-6 APTM20DHM16T - Rev 2
u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1.
APT website - http://www.advancedpower.com
APTM20DHM16T
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 -40 -40 -40 Min Typ Max 0.32 0.6 150 125 100 4.7 160 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
RT = e ae1 1 ou T: Thermistor temperature exp e B25 / 85 c c T - T /u RT: Thermistor value at T / e 25 ou e R 25
Min
Typ 68 4080
Max
Unit kW K
Package outline
APT website - http://www.advancedpower.com
3-6
APTM20DHM16T - Rev 2
May, 2004
APTM20DHM16T
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 Single Pulse 0.9 0.7 0.5
0.05 0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics
VGS=15V
350 300 ID, Drain Current (A) 250 200 150 100 50 0
Transfert Characteristics 300 ID, Drain Current (A) 250 200 150 100 50 0
TJ=25C TJ=125C TJ=-55C VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
10V 9V 8.5V 8V 7.5V 7V 6.5V
0
4
8
12
16
20
24
28
0
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A)
Normalized to VGS=10V @ 52A
1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 120 100 80 60 40 20 0
1.1 1
VGS=10V
VGS=20V
0.9 0.8 0 25 50 75 100 125 150 ID, Drain Current (A)
25
50
75
100
125
150
May, 2004 4-6 APTM20DHM16T - Rev 2
TC, Case Temperature (C)
APT website - http://www.advancedpower.com
APTM20DHM16T
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS=10V ID= 52A
1000
limited by RDSon
100
100s
10 Single pulse TJ=150C 1 1
1ms 10ms 100ms
10 100 1000 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 14 ID=104A VDS=40V 12 TJ=25C 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC)
May, 2004
VDS=100V
10000
Ciss Coss
VDS=160V
1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
APT website - http://www.advancedpower.com
5-6
APTM20DHM16T - Rev 2
APTM20DHM16T
Delay Times vs Current 120 100 td(on) and td(off) (ns) 80 60 40 20 0 0 25 50 75 100 125 150 175 ID, Drain Current (A)
VDS=133V RG=5 TJ=125C L=100H
Rise and Fall times vs Current 160 140
VDS=133V RG=5 TJ=125C L=100H
td(off) tr and tf (ns)
120 100 80 60 40 20 0 0
tf
td(on)
tr
25
50 75 100 125 150 175 ID, Drain Current (A)
Switching Energy vs Current 2 Switching Energy (mJ) 1.5 1 0.5 0 0 25 50 75 100 125 150 175 ID, Drain Current (A) Operating Frequency vs Drain Current
VDS=133V D=50% RG=5 TJ=125C VDS=133V RG=5 TJ=125C L=100H
Switching Energy vs Gate Resistance 3
VDS=133V ID=104A TJ=125C L=100H
Eoff
Eon and Eoff (mJ)
2.5 2 1.5 1 0.5 0
Eoff
Eon
Eon
5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 TJ=150C
300 250 Frequency (kHz) 200 150 100 50 0 25 38 50 63 75 88 100 ID, Drain Current (A)
100
TJ=25C 10
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
May, 2004
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
6-6
APTM20DHM16T - Rev 2

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