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| MITSUBISHI IGBT MODULES CM10MD1-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE CM10MD1-12H IC ..................................................................... 10A VCES ............................................................ 600V Insulated Type CIB Module 3 Inverter+3 Converter UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC & DC motor controls, General purpose inverters, Servo controls, NC, Robotics, UPS OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm MARKING(PRODUCT'S NAME AND LOT NUMBER) K P1 2.54 2.54 2.54 7.5 8 8 12.28 7.62 7.62 7.62 EU K P1 A GU EV GV EW GW GV GU 2.54 2.54 2.54 2.54 NOT CONNECTED GW E R 2-4.8 0.1 MOUNTING HOLES S T GU EU GU A N U GV EV GV V GW EW GW E W 53 0.5 26.5 0.3 26.5 0.3 32 9 0.1 CIRCUIT DIAGRAM LABEL 9 0.1 54 64 0.5 2 1 t = 0.5 (30) 8 MAIN CIRCUIT TERMINAL 0.8 t = 0.5 2-4.8 0.2 R S T N U V W 16.5 8 8 12.5 12.5 8 8 5 80 0.3 90 0.5 CONTROL CIRCUIT TERMINAL 5.3 +1.0 -0.5 5 +1.0 -0.5 Note. Not use the guiding holes to mount on the cooling fin. Feb.1999 MITSUBISHI IGBT MODULES CM10MD1-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICM IE (Note. 1) IEM (Note. 1) PC (Note. 3) (Tj = 25C) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Emitter Current Maximum collector dissipation G - E Short C - E Short TC = 25C PULSE TC = 25C PULSE Tf = 25C Condition (Note. 2) (Note. 2) Rating 600 20 10 20 10 20 36 Unit V V A A A A W CONVERTER PART Symbol VRRM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing Condition Rating 800 220 20 300 375 Unit V V A A A 2s 3 rectifying circuit Tf = 112C 1 cycle at 60Hz, peak value Non-repetitive Value for one cycle of surge current COMMON RATING Symbol Tj Tstg Viso -- -- Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight Condition Rating -40 ~ +150 -40 ~ +125 2500 1.47 ~1.96 60 Unit C C V N.m g AC 1 min. Mounting M4 screw Typical value Feb.1999 MITSUBISHI IGBT MODULES CM10MD1-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE ELECTRICAL CHARACTERISTICS INVERTER PART Symbol ICES Parameter (Tj = 25C) Test conditions VCE = VCES, VGE = 0V IC = 1mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 10A, VGE = 15V Tj = 150C VCE = 10V VGE = 0V VCC = 300V, IC = 10A, VGE = 15V VCC = 300V, IC = 10A VGE1 = VGE2 = 15V RG = 63 Resistive load IE = 10A, VGE = 0V IE = 10A, VGE = 0V die / dt = - 20A / s IGBT part, Per 1/6 module FWDi part, Per 1/6 module Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-emitter cutoff current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG Turn-on delay time td (on) Turn-on rise time tr td (off) Turn-off delay time tf Turn-off fall time VEC (Note. 1) Emitter-collector voltage trr (Note. 1) Reverse recovery time Qrr (Note. 1) Reverse recovery charge Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5) Min. -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ. -- 6 -- 2.1 2.15 -- -- -- 30 -- -- -- -- -- -- 0.03 -- -- Max. 1 7.5 0.5 2.8 -- 1.0 0.9 0.2 -- 120 300 200 300 2.8 110 -- 3.5 4 Unit mA V A V nF nF nF nC ns ns ns ns V ns C C/W C/W (Note. 4) CONVERTER PART Symbol Parameter VR = VRRM, Tj = 150C IF = 20A Per 1/6 module Condition Min. -- -- -- Limits Typ. -- -- -- Max. 8 1.5 3.6 Unit mA V C/W Repetitive reverse current IRRM Forward voltage drop VFM Rth(j-f) (Note. 5) Thermal resistance Note 1. 2. 3. 4. 5. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Thermal resistance is specified under following conditions. * The conductive greese applied, between module and fin. * Al plate is used as fin. Feb.1999 MITSUBISHI IGBT MODULES CM10MD1-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 20 COLLECTOR CURRENT IC (A) VGE=20 (V) 16 Tj=25C 15 20 COLLECTOR CURRENT IC (A) 12 VCE = 10V 16 TRANSFER CHARACTERISTICS (TYPICAL) 12 11 12 8 10 9 87 8 4 4 Tj = 25C Tj = 125C 0 0 2 4 6 8 10 12 14 16 18 20 0 0 1 2 3 4 5 6 7 8 9 10 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VGE = 15V Tj = 25C Tj = 125C 10 9 8 7 6 5 4 3 2 1 0 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj = 25C 4 3 IC = 20A IC = 10A 2 1 IC = 4A 0 2 4 6 8 10 12 14 16 18 20 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISITICS (TYPICAL) 102 EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE VS. VCE (TYPICAL) 101 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 Tj = 25C VGE = 0V 100 7 5 3 2 Cies Coes 101 7 5 3 2 10-1 7 5 3 2 Cres 100 0 0.8 1.6 2.4 3.2 4.0 10-2 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb.1999 MITSUBISHI IGBT MODULES CM10MD1-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 SWITCHING TIMES (ns) tf 5 3 2 5 3 2 3 2 td(off) 102 7 5 3 2 102 7 5 3 2 trr Irr 100 7 5 3 2 td(on) VCC = 300V VGE = 15V RG = 63 Tj = 125C 2 3 5 7 101 2 3 5 7 102 tr 101 0 10 101 -1 10 2 3 5 7 100 2 3 5 7 101 10-1 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25C 2 7 5 3 2 7 5 3 2 7 5 3 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25C 2 7 5 3 2 7 5 3 2 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - f) 100 Rth(j - f) = 3.5C/ W 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - f) 100 Rth(j - f) = 4.0C/ W 3 2 10-1 10-1 7 5 3 2 7 5 3 2 10-1 10-1 7 5 3 2 7 5 3 2 10-2 10-2 10-2 10-2 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) VGE - GATE CHARGE (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 0 IC = 10A VCC = 200V VCC = 300V 10 20 30 40 50 GATE CHARGE QG (nC) Feb.1999 REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 101 - di/dt = 20A / s 7 7 Tj = 25C |
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