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| FDFMA3N109 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode May 2006 FDFMA3N109 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications. PIN 1 A NC D A K D NC K G S D * Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm * RoHS Compliant Schottky: * VF < 0.46 V @ 500mA Features MOSFET: * 2.9 A, 30 V RDS(ON) = 123 m @ VGS = 4.5 V RDS(ON) = 140 m @ VGS = 3.0 V RDS(ON) = 163 m @ VGS = 2.5 V 1 2 3 6K 5G 4S MicroFET 2x2 Absolute Maximum Ratings Symbol VDS VGS ID TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC = 25C, VGS = 4.5V) - Continuous (TC = 25C, VGS = 2.5V) - Pulsed Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Temperature Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current Ratings 30 12 2.9 2.7 10 1.5 0.65 -55 to +150 28 1 Units V V A PD TJ, TSTG VRRM IO (Note 1a) (Note 1b) W C V A Thermal Characteristics RJA RJA RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 83 193 101 228 C/W Package Marking and Ordering Information Device Marking 109 (c)2006 Fairchild Semiconductor Corporation Device FDFMA3N109 Reel Size 7'' Tape width 8mm Quantity 3000 units FDFMA3N109 Rev B(W) FDFMA3N109 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current Test Conditions ID = 250 A VGS = 0 V, ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 12 V, VGS = 0 V VDS = 0 V Min Typ Max Units 30 25 1 10 V mV/C A A Off Characteristics On Characteristics VGS(th) VGS(th) TJ Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient ID = 250 A VDS = VGS, ID = 250 A, Referenced to 25C VGS = 4.5V, ID = 2.9A VGS = 3.0V, ID = 2.7A VGS = 2.5V, ID = 2.5A VGS = 4.5V, ID = 2.9A, TC = 85C VGS = 3.0V, ID = 2.7A, TC = 150C VGS = 2.5V, ID = 2.5A, TC = 150C 0.4 1.0 -3 75 84 92 95 138 150 123 140 163 166 203 268 1.5 V mV/C RDS(on) Static Drain-Source On-Resistance m Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, f = 1.0 MHz V GS = 0 V, V GS = 0 V, 190 30 20 4.6 220 40 30 pF pF pF f = 1.0 MHz Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 6 8 12 2 12 16 21 4 3.0 ns ns ns ns nC nC nC VDS = 15 V, VGS = 4.5 V ID = 2.9 A, 2.4 0.35 0.75 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge IS = 2.0 A IS = 1.1 A IF = 2.9 A, dIF/dt = 100 A/s 0.9 0.8 10 2 2.9 1.2 1.2 A V ns nC A mA V V Schottky Diode Characteristics IR VF VF Reverse Leakage Forward Voltage Forward Voltage VR = 28 V IF = 1 A IF = 500 mA TJ = 25C TJ = 85C TJ = 25C TJ = 85C TJ = 25C TJ = 85C 10 0.07 0.50 0.49 0.40 0.36 100 4.7 0.57 0.60 0.46 0.43 FDFMA3N109 Rev B(W) FDFMA3N109 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Electrical Characteristics TA = 25C unless otherwise noted Notes: 2 1. RJA is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. (a) MOSFET RJA = 83C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (b) MOSFET RJA = 193C/W when mounted on a minimum pad of 2 oz copper (d) Schottky RJA = 228C/W when mounted on a minimum pad of 2 oz copper (c) Schottky RJA = 101C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB a) 83oC/W when mounted on 2 a 1in pad of 2 oz copper b) 193oC/W when mounted on a minimum pad of 2 oz copper c)101 oC/W when mounted on 2 a 1in pad of 2 oz copper b) 228oC/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDFMA3N109 Rev B(W) FDFMA3N109 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics 10 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 2.5V 1.8 VGS = 2.0V ID, DRAIN CURRENT (A) 8 3.5V 1.6 2.7V 2.9V 2.0V 6 1.4 4 1.2 2.5V 2.7V 2.9V 3.5V 4.0V 4.5V 2 1.5V 1 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 3 0.8 0 2 4 6 ID, DRAIN CURRENT (A) 8 10 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.24 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 ID = 2.9A VGS = 4.5V ID = 1.45A 0.2 0.16 TA = 125 C o 0.12 0.08 TA = 25 C o 0.04 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 10 125 C Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) VDS = 5V TA = -55 C o VGS = 0V o ID, DRAIN CURRENT (A) 8 25oC 10 1 6 0.1 TA = 125 C 25oC -55oC o 4 0.01 2 0.001 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 3 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDFMA3N109 Rev B(W) FDFMA3N109 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 2.9A 300 f = 1MHz VGS = 0 V 250 8 CAPACITANCE (pF) VDS = 10V 20V 200 Ciss 6 15V 150 4 100 Coss 2 50 Crss 0 0 1 2 3 4 Qg, GATE CHARGE (nC) 5 6 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 10 IF, FORWARD LEAKAGE CURRENT (A) IR, REVERSE LEAKAGE CURRENT (A) Figure 8. Capacitance Characteristics. 0.1 0.01 TJ = 125 C o 1 TJ = 125 C 0.1 TJ = 25 C o o 0.001 TJ = 100 C 0.0001 o 0.01 0.00001 TJ = 25 C 0.000001 o 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 VF, FORWARD VOLTAGE (V) 0.7 0.8 0 5 10 15 20 VR, REVERSE VOLTAGE (V) 25 30 Figure 9. Schottky Diode Forward Voltage. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 10. Schottky Diode Reverse Current. 1 D = 0.5 RJA(t) = r(t) * RJA RJA =193C/W P(pk) t1 t2 SINGLE PULSE 0.2 0.1 0.1 0.05 0.02 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDFMA3N109 Rev B(W) FDFMA3N109 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode FDFMA3N109 Rev B(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) FASTrTM ActiveArrayTM FPSTM BottomlessTM FRFETTM Build it NowTM GlobalOptoisolatorTM CoolFETTM GTOTM CROSSVOLTTM HiSeCTM DOMETM I2CTM EcoSPARKTM i-LoTM E2CMOSTM ImpliedDisconnectTM EnSignaTM IntelliMAXTM FACTTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 Preliminary No Identification Needed Full Production Obsolete Not In Production |
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