 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Si3552DV Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 FEATURES rDS(on) (W) 0.105 @ VGS = 10 V 0.175 @ VGS = 4.5 V 0.200 @ VGS = - 10 V 0.360 @ VGS = - 4.5 V ID (A) 2.5 2.0 - 1.8 - 1.2 D TrenchFETr Power MOSFET D 100% Rg Tested P-Channel P Channel - 30 TSOP-6 Top View G1 3 mm 1 6 5 D1 D1 S2 S2 2 S1 G1 G2 G2 3 4 D2 2.85 mm S1 Ordering Information: SI3552DV-T1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage a, Continuous Drain Current (TJ = 150_C)a b Symbol VDS VGS TA = 25_C TA = 70_C ID IDM IS TA = 25_C TA = 70_C PD TJ, Tstg N-Channel 30 "20 2.5 2.0 8 1.05 1.15 0.73 P-Channel - 30 "20 - 1.8 - 1.2 -7 - 1.05 Unit V Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b a, Maximum Power Dissipationa b A W _C Operating Junction and Storage Temperature Range - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Lead Notes a. Surface Mounted on FR4 Board. b. t v 5 sec Document Number: 70971 S-31725--Rev. B, 18-Aug-03 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJL Typical 93 130 75 Maximum 110 150 90 Unit _C/W C/W 1 Si3552DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS = - 24 V, VGS = 0 V, TJ = 55_C On-State On State Drain Currenta ID( ) D(on) VDS = 5 V, VGS = 10 V VDS = - 5 V, VGS = - 10 V VGS = 10 V, ID = 2.5 A Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = - 10 V, ID = - 1.8 A VGS = 4.5 V, ID = 2.0 A VGS = - 4.5 V, ID = - 1.2 A Forward Transconductancea gf fs VSD VDS = 10 V, ID = 2.5 A VDS = - 15 V, ID = - 1.8 A IS = 1.05 A, VGS = 0 V IS = - 1.05 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 5 -5 0.085 0.165 0.140 0.298 4.3 2.4 0.81 - 0.83 1.10 - 1.10 0.105 0.200 0.175 0.360 S W 1.0 - 1.0 "100 "100 1 -1 5 -5 A mA V Symbol Test Condition Min Typ Max Unit Gate-Body Gate Body Leakage IGSS nA Diode Forward Voltagea V Dynamicb Total Gate Charge Qg N-Channel VDS = 15 V, VGS = 5 V, ID = 1.8 A P-Channel VDS = - 15 V VGS = - 5 V, ID = - 1.8 A V, V 18 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P Channel P-Channel VDD = - 15 V, RL = 1 W 1V 15 ID ^ - 1 A, VGEN = - 10 V, RG = 6 W N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IF = 1.05 A, di/dt = 100 A/ms IF = - 1.05 A, di/dt = 100 A/ms N-Ch P-Ch 0.5 3 7 8 9 12 13 12 5 7 35 30 2.1 2.4 0.7 0.9 0.7 0.8 2.4 11 11 12 14 18 20 18 8 11 60 60 ns W 3.2 3.6 nC Gate-Source Gate Source Charge Qgs Qgd d Rg td( ) d(on) tr td( ff) d(off) tf trr Gate-Drain Gate Drain Charge Gate Resistance Turn-On Turn On Delay Time Rise Time Turn-Off Turn Off Delay Time Fall Time Source-Drain Reverse Recovery Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 70971 S-31725--Rev. B, 18-Aug-03 Si3552DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10 NCHANNEL 10 Output Characteristics VGS = 10 thru 5 V Transfer Characteristics TC = - 55_C 8 I D - Drain Current (A) I D - Drain Current (A) 8 25_C 6 4V 6 125_C 4 4 2 2V 0 0 1 2 3 3V 2 0 4 5 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 0.25 On-Resistance vs. Drain Current 300 250 C - Capacitance (pF) 200 150 100 Coss 50 0 Crss 0 5 Capacitance r DS(on)- On-Resistance ( W ) 0.20 VGS = 4.5 V VGS = 10 V Ciss 0.15 0.10 0.05 0.00 0 1 2 3 4 5 6 7 ID - Drain Current (A) 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) 10 Gate Charge 1.8 1.6 r DS(on)- On-Resistance ( W ) (Normalized) 1.4 1.2 1.0 0.8 0.6 0.4 - 50 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) 8 VDS = 15 V ID = 1.8 A VGS = 10 V ID = 2.5 A 6 4 2 0 0 1 2 3 4 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70971 S-31725--Rev. B, 18-Aug-03 www.vishay.com 3 Si3552DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.40 NCHANNEL On-Resistance vs. Gate-to-Source Voltage ID = 2 A r DS(on) - On-Resistance ( W ) 0.32 ID = 2.5 A I S - Source Current (A) 1 TJ = 150_C 0.24 0.16 TJ = 25_C 0.08 0.1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.00 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) - 0.0 Power (W) - 0.2 - 0.4 2 - 0.6 - 0.8 - 50 4 ID = 250 mA 6 8 Single Pulse Power (Junction-to-Ambient) - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 30 TJ - Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 70971 S-31725--Rev. B, 18-Aug-03 4 Si3552DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 NCHANNEL Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10 VGS = 10 thru 7 V 8 I D - Drain Current (A) 5V I D - Drain Current (A) PCHANNEL 8 Output Characteristics 6V Transfer Characteristics TC = - 55_C 6 25_C 125_C 6 4 4 4V 2 2V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 3V 2 0 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) 0.6 0.5 r DS(on)- On-Resistance ( W ) 0.4 0.3 0.2 0.1 0.0 0 1 On-Resistance vs. Drain Current 300 Capacitance 240 VGS = 4.5 V C - Capacitance (pF) Ciss 180 VGS = 10 V 120 Coss 60 Crss 0 6 0 2 3 4 5 6 7 ID - Drain Current (A) 12 18 24 30 VDS - Drain-to-Source Voltage (V) www.vishay.com Document Number: 70971 S-31725--Rev. B, 18-Aug-03 5 Si3552DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10 VDS = 15 V ID = 1.8 A r DS(on)- On-Resistance ( W ) (Normalized) PCHANNEL 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 - 50 Gate Charge On-Resistance vs. Junction Temperature VGS = 10 V ID = 1.8 A V GS - Gate-to-Source Voltage (V) 8 6 4 2 0 0 1 2 3 4 5 Qg - Total Gate Charge (nC) - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) 0.6 0.5 r DS(on)- On-Resistance ( W ) Source-Drain Diode Forward Voltage 10 On-Resistance vs. Gate-to-Source Voltage ID = 1.8 A ID = 1 A I S - Source Current (A) 0.4 0.3 0.2 0.1 0.0 1 TJ = 150_C TJ = 25_C 0.1 0.00 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) 0.6 Threshold Voltage 8 Single Pulse Power (Junction-to-Ambient) 0.4 V GS(th) Variance (V) 6 Power (W) 0.2 ID = 250 mA 4 0.0 - 0.2 2 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 30 TJ - Temperature (_C) www.vishay.com 6 Document Number: 70971 S-31725--Rev. B, 18-Aug-03 Si3552DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 PCHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 70971 S-31725--Rev. B, 18-Aug-03 www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
Price & Availability of SI3552DV-T1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |