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PD-20709 rev. C 11/99
100BGQ045 100BGQ045J
SCHOTTKY RECTIFIER 100 Amp
Major Ratings and Characteristics Characteristics
I F(AV) Rectangular waveform @ TC I DC VRRM IFSM @ tp = 5 s sine VF @100 Apk typical @ TJ TJ range Maximum 100BGQ045 100 100 141 45 4400 0.63 150 - 55 to 150
Description/Features Units
A C A V A V C C The NEW 100BGQ045 Schottky rectifier has been optimized for ultra low forward voltage drop specifically for low voltage output in high current AC/DC power supplies. The proprietary barrier technology allows for reliable operation up to 150C junction temperature. Typical applications are in switching power supplies, converters, reverse battery protection, and redundant power subsystems. 150C TJ operation High Frequency Operation Ultra low forward voltage drop Continuous High Current operation Guard ring for enhanced ruggedness and long term reliability
PowIRtabTM package
Case Styles 100BGQ045 100BGQ045J
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100BGQ045, 100BGQ045J
PD-20709 rev. C 11/99
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V) 45 VRWM Max. Working Peak Reverse Voltage (V)
100BGQ045
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current IF(RMS) RMS Forward Current IFSM EAS IAR Max. Peak One Cycle Non-Repetitive Surge Current Non-RepetitiveAvalancheEnergy Repetitive Avalanche Current
100BGQ Units
100 141 4400 830 40 6 A mJ A A A T C = 95C
Conditions
50% duty cycle @ TC = 100C, rectangular wave form 5s Sine or 3s Rect. pulse 10ms Sine or 6ms Rect. pulse Following any rated load condition and with rated VRRM applied
TJ = 25 C, IAS = 6 Amps, L = 2.0 mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. V A = 1.5 x VR typical
Electrical Specifications
Parameters
VFM Forward Voltage Drop (1) (2)
100BGQ Units
Typ. Max.
Conditions
@ 50A @ 100A @ 50A @ 100A TJ = 25 C TJ = 125C TJ = 150 C TJ = 25 C TJ = 150 C VR = rated VR VR = 45 V
0.52 0.56 0.67 0.73 0.47 0.52 0.63 0.68
V V V V mA mA mA
IRM
Reverse Leakage Current (1)
0.3 180
1 320
600 1000 VF(TO) Threshold Voltage rt CT LS Forward Slope Resistance Max. Junction Capacitance Typical Series Inductance (Rated V R) 0.379 2.7 3.5 m
VTJ = T J max. VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 C Measured from tab to mounting plane
2700 pF nH 10,000V/ s
dv/dt Max. Voltage Rate of Change
Thermal-Mechanical Specifications
Parameters
TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range
(1) Pulse Width < 300s, Duty Cycle < 2% (2) VFM = VF(TO) + rt x IF
100BGQ Units
-55 to 150 -55 to 150 0.50 0.20 5 (0.18) Min. Max. 1.2 (10) 2.4 (20) C C C/W C/W g (oz.) N*m (Ibf-in) DCoperation
Conditions
RthJC Max. Thermal Resistance Junction to Case RthCS Typical Thermal Resistance, Case to Heatsink wt T Approximate Weight Mounting Torque Case Style
Mounting surface , smooth and greased
PowIRtabTM
2
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100BGQ045, 100BGQ045J
PD-20709 rev. C 11/99
1 00 0 10 0 0 T J = 1 5 0 C TJ = 15 0 C TJ = 12 5 C TJ = 2 5 C R e v e rse C u rre n t - I R (m A ) 10 0 1 2 5 C 1 0 0 C 10 7 5 C 1 5 0 C
In sta n t a n e o u s Fo rw a rd C urre n t - I F (A )
10 0
0 .1
2 5 C
0 .0 1 0 5 10 15 20 25 30 35 40 45 R e v e rse V o lt a g e - VR ( V )
Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage
1 0 0 00 (p F)
10
Ju n c t io n C a p a c ita n c e - C
T = 2 5 C
J
T
1 00 0
1 0 0 .2 0 .4 0 .6 0 .8 1 1 .2 1 .4 1 .6 Fo rw a rd V o lt a g e D ro p - V FM (V )
10 0 0 10 20 30 40 50 R e v e rse V o lta g e - VR (V )
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1 T he rm a l Im p e d a n c e Z thJC (C / W )
Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
D D D D D 0 .1
= = = = =
0.75 0.50 0.33 0.25 0.20
PD M
Sin gle Pu lse (T herm al R esista n ce)
t1 N o t e s: t2
1 . D u t y f a c t o r D = t 1/ t 2 2 . P e a k T J = P D M x Z thJ C+ T C 0 .0 1 0 .0 0 0 0 1 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 1 00
Fig. 4 - Maximum Thermal Impedance Z thJC Characteristics
t 1 , R ectan gu la r Pu lse D uration (Seco nd s)
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100BGQ045, 100BGQ045J
PD-20709 rev. C 11/99
1 50 A llo w a b le C a se T e m p e ra t u re - (C ) 1 40 1 30 1 20 1 10 1 00 90 80 70 60 50 0 20 40 60 80 10 0 1 2 0 1 40 1 60 A v e ra g e Fo rw a rd C u rre n t - I F(AV ) (A )
s ee no te (3 )
120 A v e ra g e P o w e r Lo ss - (W a t t s) 100 80 60 40 20 0 0 20 40 60 80 1 0 0 1 20 14 0 1 60 A v e ra g e F o rw a rd C u rre n t - I F(A V) (A ) D D D D D = = = = = 0 .2 0 0 .2 5 0 .3 3 0 .5 0 0 .7 5 R M S Lim it DC
DC
Sq u a re w a v e (D = 0 .5 0 ) 8 0 % R a t e d V R a p p lie d
Fig. 5 - Maximum Allowable Case Temperature Vs. Average Forward Current
10 0 0 0 N o n -R e p e t it iv e S urg e C u r re n t - I FSM (A )
Fig. 6 - Forward Power Loss Characteristics
1000
A t A n y R a t e d Lo a d C o n d itio n A n d W it h R a t e d V RR M A p p lie d F o llo w in g S u rg e 1 00 10 1 00 1 00 0 1 00 00 S q ua re W a v e P u lse D u ra t io n - t p (m ic ro se c )
Fig. 7 - Maximum Non-Repetitive Surge Current
L H IG H - SP E E D SW IT C H FR E E - W H E E L D IO D E 40 HFL4 0 S02 V d = 2 5 V o lt
D UT
IRFP4 60 Rg = 25 ohm
+
C UR R E N T M O N IT O R
Fig. 8 - Unclamped Inductive Test Circuit
(3) Formula used: T C = TJ - (Pd + PdREV) x R thJC ; Pd = Forward Power Loss = I F(AV) x VFM @ (IF(AV) / D) (see Fig. 6); Pd REV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
4
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100BGQ045, 100BGQ045J
PD-20709 rev. C 11/99
Ordering Information Table
Device Code
100 BGQ 045
1 1 2 3 4 6 Current Rating Essential Part Number Voltage code: Code = VRRM none = PowIRtabTMstandard J = Short Lead Version 2 3
J
4
Outline Table
Case Style PowIRtabTM Dimensions in millimeters and (inches)
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100BGQ045, 100BGQ045J
PD-20709 rev. C 11/99
Outline Table
Case Style PowIRtabTM "J" version Dimensions in millimeters and (inches)
6
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100BGQ045, 100BGQ045J
PD-20709 rev. C 11/99
*************************************************** This model has been developed by Wizard SPICE MODEL GENERATOR (1999) ( International Rectifier Corporation ) contains Proprietary Information *************************************************** SPICE Model Diode is composed by a simple diode plus paralled VCG2T ***************************************************
This model
.SUBCKT 100bgq45 ANO CAT D1 ANO 1 DMOD (0.24359) *Define diode model . MODEL DMOD D ( IS=6.61799286342482E-05A, N=1.0212796726385, BV=45V, + IBV=0.115140026620575A,RS= 0.0005748724,CJO=3.31930927290723E-08, +VJ=0.456112448442971,XTI=2,EG=0.721992455742664) ***************************************************** * Implementation of VCG2T VX 1 2 DC 0V R1 2 CAT TRES 1E-6 .MODEL TRES RES (R=1, TC1=9.83346387011944) GP1 ANO CAT VALUE= {-ABS (I(VX)) *(EXP((((-2.949174E-03/ 9.833464)*((V(2,CAT)*1E6)/(I(VX)+1E-6)-1))+1)*6.600191E-2*ABS(V(ANO,CAT)))-1)} ***************************************************** .ENDS 100bgq45 Thermal Model Subcircuit .SUBCKT 100bgq45T 5 1 CTHERM1 CTHERM2 CTHERM3 CTHERM4 RTHERM1 RTHERM2 RTHERM3 RTHERM4 5 4 3 2 5 4 3 2 4 3 2 1 4 3 2 1 1.66E+3 2.22E+2 1.48E+5 3.12E+5 3.42E-2 2.55E-1 8.41E-2 1.81E-4
.ENDS 100bgq45T
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Data and specifications subject to change without notice.
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