 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| S T U/D1030P L S amHop Microelectronics C orp. P reliminary May.28 2004 P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m W ) Max ID -18A R DS (ON) S uper high dense cell design for low R DS (ON). 55 @ V G S = -10V 85 @ V G S = -4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S DU S E R IE S TO-252AA(D-P AK) S DD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit 30 20 18 45 20 50 -55 to 175 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 3 50 C /W C /W S T U/D1030P L E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS c Condition VGS = 0V, ID = -250uA VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250uA VGS = -10V, ID =-5.3A VGS = -4.5V, ID = -4.2A VDS = -5V, VGS = -10V VDS = -15V, ID = - 5.3A Min Typ C Max Unit -30 -1 100 -1 -1.8 -2.5 45 70 -15 7 612 129 96 55 V uA nA V m-ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 85 m-ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance CISS COSS CRSS c VDS =-15V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd 2 VD = -15V ID = -1A VGEN = - 10V R GE N = 6 ohm R L = 15 ohm VDS =-15V,ID =-5.3A,VGS =-10V VDS =-15V,ID =-5.3A,VGS =-4.5V VDS =-15V, ID = -5.3A VGS =-10V 12.6 17.4 45.4 37 13 6.8 2.7 2.6 ns ns ns ns nC nC nC nC S T U/D1030P L E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =-10A Min Typ Max Unit -1 -1.3 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 20 -V G S =3V 25 25 C 20 -V G S =10,9,8,7,6,5,4V -ID, Drain C urrent(A) 12 -V G S =2V -ID, Drain C urrent (A) 16 -55 C 15 T j=125 C 10 8 4 0 -V G S =1V 5 0 0.0 0 2 4 6 8 10 12 0.5 1 1.5 2 2.5 3 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics R DS (ON), On-R es is tance(Ohms ) 2.2 1.8 1.4 1.0 0.6 0.2 0 F igure 2. Trans fer C haracteris tics V G S =-10V ID=-5.3A 1000 C , C apacitance (pF ) 800 600 400 200 0 C rs s 0 5 10 15 20 25 30 C is s C os s -50 -25 0 25 50 75 100 125 T j( C ) -V DS , Drain-to S ource Voltage (V ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S T U/D1030P L B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=-250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 ID=-250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 12 F igure 6. B reakdown V oltage V ariation with T emperature 20 gFS , T rans conductance (S ) 8 6 4 2 0 V DS =-15V 0 5 10 15 20 25 -Is , S ource-drain current (A) 10 10 1 0 0.4 0.6 0.8 1.0 T J =25 C 1.2 1.4 -IDS , Drain-S ource C urrent (A) -V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent -V G S , G ate to S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 -ID, Drain C urrent (A) it 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 Qg, T otal G ate C harge (nC ) VDS =-15V ID=-5.3A 10 R (O DS N) L im 10 10 0m s ms 1 DC 1s 0.1 0.03 VGS =-10V S ingle P ulse T c=25 C 1 10 30 50 0.1 -V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 4 S T U/D1030P L V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 6 S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E 0.01 10 -5 P DM t1 1. 2. 3. 4. 10 -3 t2 R cJ A (t)=r (t) * R cJ A R cJ A=S ee Datas heet T J M-T A = P DM* R cJ A (t) Duty C ycle, D=t1/t2 1 10 10 -4 10 -2 10 -1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S T U/D1030P L 6 S T U/D1030P L 5 95 7 84 9 6.00 35 05 85 0.94 4 3 0 9 7 30 3 9 36 3 41 3 3 5 1 4 L2 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 BSC 398 0.064 33 REF. 6 S T U/D1030P L TO-251 Tube TO251 Tube/TO-252 Tape and Reel Data " A" TO-252 Carrier Tape UNIT:P PACKAGE TO-252 (16 P) A0 6.80 O0.1 B0 10.3 O0.1 K0 2.50 O0.1 D0 r2 D1 r1.5 + 0.1 -0 E 16.0 0.3O E1 1.75 0.1O E2 7.5 O0.15 P0 8.0 O0.1 P1 4.0 O0.1 P2 2.0 O0.15 T 0.3 O0.05 TO-252 Reel S UNIT:P TAPE SIZE 16 P REEL SIZE r 330 M r330 O 0.5 N r97 O 1.0 W 17.0 + 1.5 -0 T 2.2 H r13.0 + 0.5 - 0.2 K 10.6 S 2.0 O0.5 G R V 8 |
Price & Availability of STD1030PL
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |